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Home » NEWEST Products » New by Manufacturer » STMicroelectronics » 650V HB Series Trench Gate Field-Stop IGBTs - STM
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STMicroelectronics 650V HB Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V HB Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V HB Series Trench Gate Field-Stop IGBTs are IGBTs that are developed using an advanced proprietary trench gate and field stop structure. These devices represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a minimal collector current turn off tail as well as very low saturation voltage (Vce(sat)) down to 1.6V (typical), minimizing energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Learn More About STMicroelectronics 600-650V IGBTs
newElectronics Article: IGBTs cut energy loses, improve efficiency

 
Features
  • Maximum junction temperature: TJ = 175°C
  • High speed switching series
  • Minimized tail current
  • Very low saturation voltage
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance

  • Very fast soft recovery antiparallel diode
  • Lead free package

  • Applications
    • Photovoltaic inverters
    • High frequency converters
Part NumberPackage / CaseCollector- Emitter Voltage VCEO MaxContinuous Collector Current at 25 CPower DissipationData Sheet
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