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Home » NEWEST Products » New by Manufacturer » Spansion » S34ML0xG1 SLC NAND Flash Memory - Spansion
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Spansion S34ML0xG1 SLC NAND Flash Memory

Spansion S34ML & S34MS SLC NAND Flash Memory

Spansion's S34ML & S34MS SLC NAND Flash Memory is the first family of single-level cell (SLC) Spansion® NAND products using 4x nm floating-gate technology, targeted specifically for data storage in automotive, consumer and networking applications. Spansion SLC NAND is offered in densities from 1 Gb to 8 Gb in 3.0V and 1.8V families that feature high performance, extended temperature range, long-term product support and stringent reliability demands, such as 1-bit error correction code (ECC). Spansion's NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Features
  • Density
    • 1 Gbit / 2 Gbit / 4 Gbit / 8 Gbit
  • Architecture
    • Input / Output Bus Width: 8-bits
    • Page Size: (2048 + 64) bytes; 64 bytes is spare area
    • Block Size: 64 Pages or (128k + 4k) bytes
    • Plane Size
    • 1 Gbit / 2 Gbit 1024 Blocks per Plane or (128M + 4M) bytes
    • 4 Gbit / 8 Gbit 2048 Blocks per Plane or (256M + 8M) bytes
  • Device Size
    • 1 Gbit: 1 Plane per Device or 128 Mbyte
    • 2 Gbit: 2 Planes per Device or 256 Mbyte
    • 4 Gbit: 2 Planes per Device or 512 Mbyte
    • 8 Gbit: 2 Planes per Device or 512 Mbyte
  • NAND Flash Interface
    • Standard NAND signal Interface and command set
    • Address, Data and Commands multiplexed
  • Supply Voltage
    • ML Series: 3.3V
    • MS Series: 1.8V
  • Security
    • One Time Programmable (OTP) area
    • Serial number (unique ID)
    • Hardware program/erase disabled during power transition

  • Additional Features
    • 2 Gb / 4 Gb and 8 Gb parts support Multiplane Program and Erase commands
    • Supports Copy Back Program
    • 2 Gb / 4 Gb and 8 Gb parts support Multiplane Copy Back Program
    • Supports Read Cache
  • Electronic Signature
    • Manufacturer ID: 01h
  • Operating Temperature
    • Industrial: -40°C to 85°C
  • Page Read / Program
    • Random access: 25 μs (Max)
    • Sequential access: 25 ns (Max)
    • Program time / Multiplane Program time: 200 μs (Typ)
  • Block Erase (S34ML01G1)
    • Block Erase time: 2.0 ms (Typ)
  • Block Erase / Multiplane Erase (S34ML02G1, S34ML04G1, and S34ML08G1)
    • Block Erase time: 3.5 ms (Typ)
  • Reliability
    • 100,000 Program / Erase cycles (Typ) (with 1bit / 512 + 16 byte ECC)
    • 10 Year Data retention (Typ)
    • Block zero is a valid block and will be valid for at least 1000 program-erase cycles
Block Diagram
Block Diagram
Array Organization
Array Organization
  • Spansion
  • Semiconductors|Embedded Processors|IC-Memory