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MACOM MAGX-000035-0150x GaN HEMT Pulsed Power Transistors MACOM MAGX-000035-0150x GaN HEMT Pulsed Power Transistors
01/21/2015 -
15W, DC - 3.5GHz GaN on SiC HEMT Pulsed Power Transistors suitable for a variety of RF power amplifier applications.
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Infineon Technologies SmartPIM & SmartPACK IGBTs Infineon Technologies SmartPIM & SmartPACK IGBTs
01/19/2015 -
Designed to fulfill the challenges for the inverter assembly & the reliability of the whole system.
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Diodes Incorporated DMT6016LFDF Enhancement Mode MOSFET Diodes Incorporated DMT6016LFDF Enhancement Mode MOSFET
01/15/2015 -
0.6mm N-Channel Enhancement Mode MOSFET w/a 4mm² PCB footprint; ideal for low-profile applications.
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International Rectifier 1200V Gen8 IGBTs International Rectifier 1200V Gen8 IGBTs
01/07/2015 -
Gen8 trench gate field stop technology offers improved thermal resistance & 175ºC max. junction temp.
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Diodes Incorporated BC84x & BC85x Automotive Transistors Diodes Incorporated BC84x & BC85x Automotive Transistors
01/07/2015 -
Complementary NPN and PNP transistors designed for switching and AF amplifier applications.
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Diodes Incorporated MMBT39x Automotive Transistors Diodes Incorporated MMBT39x Automotive Transistors
01/07/2015 -
Complementary NPN and PNP transistor designed for medium power amplification and switching.
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TriQuint Semiconductor T1G4004532 GaN RF Power Transistors TriQuint Semiconductor T1G4004532 GaN RF Power Transistors
01/06/2015 -
45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz.
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STMicroelectronics M Series Trench Gate Field-Stop IGBTs STMicroelectronics M Series Trench Gate Field-Stop IGBTs
12/18/2014 -
Optimum compromise in performance to maximize the efficiency of inverter systems.
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Diodes Incorporated DMT6016LPS Enhancement Mode MOSFET Diodes Incorporated DMT6016LPS Enhancement Mode MOSFET
12/18/2014 -
60V N-Channel MOSFET; POWERDI5060-8  case w/a <1.1mm package profile. Ideal for thin applications.
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Diodes Incorporated DMT5015LFDF Enhancement Mode MOSFET Diodes Incorporated DMT5015LFDF Enhancement Mode MOSFET
12/18/2014 -
0.6mm 50V N-Channel Enhancement Mode MOSFET ideal for low-profile applications.
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Diodes Incorporated DXT1300 High Voltage Power Transistors Diodes Incorporated DXT1300 High Voltage Power Transistors
12/09/2014 -
450V NPN High Voltage Power Transistors w/a high continuous collector current rating of 1.5A.
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ON Semiconductor Field Stop II Series IGBTs ON Semiconductor Field Stop II Series IGBTs
12/09/2014 -
Robust, cost effective Field Stop II Trench construction that provides superior performance.
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Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs
12/09/2014 -
Designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance.
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Central Semiconductor P-Channel Enhancement Mode MOSFETs Central Semiconductor P-Channel Enhancement Mode MOSFETs
12/04/2014 -
P-channel MOSFETs featuring low rDS(ON) and low threshold voltage.
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TriQuint Semiconductor TGF3015-SM GaN HEMT TriQuint Semiconductor TGF3015-SM GaN HEMT
11/21/2014 -
A 10W, 50Ω input matched discrete GaN on SiC HEMT operating from 30MHz to 3GHz.
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TriQuint Semiconductor TGF2819-FS/FL RF Power Transistors TriQuint Semiconductor TGF2819-FS/FL RF Power Transistors
11/13/2014 -
100W Peak Power, 20W Average Power, 32V, DC - 3.5GHz, GaN RF Power Transistors.
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Vishay SiA936EDJ Dual N-Channel MOSFET Vishay SiA936EDJ Dual N-Channel MOSFET
10/16/2014 -
Designed to save space and increase power efficiency in portable electronics, featuring the industry's lowest on-resistance for 20 V devices.
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STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs
10/14/2014 -
High speed IGBTs with a 5μs minimum short circuit withstand time at TJ=150°C.
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NXP Semiconductors BLF6G20LS-110 Power LDMOS Transistors NXP Semiconductors BLF6G20LS-110 Power LDMOS Transistors
09/30/2014 -
110W LDMOS power transistor for base station applications at frequencies from 1800MHz to 2000MHz.
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NXP Semiconductors BFU5x NPN Wideband Silicon RF Transistors NXP Semiconductors BFU5x NPN Wideband Silicon RF Transistors
09/25/2014 -
AEC-Q101 qualified, low noise, high breakdown RF transistors suitable for applications up to 2GHz.
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Diodes Incorporated ULN200xA High Voltage, High Current Darlington Transistor Arrays Diodes Incorporated ULN200xA High Voltage, High Current Darlington Transistor Arrays
09/24/2014 -
Includes seven open collector common emitter pairs. Each pair is rated at 500mA.
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Toshiba U-MOSVIII-H Power MOSFETs Toshiba U-MOSVIII-H Power MOSFETs
09/24/2014 -
Provides high-speed switching & low drain-source on-resistance for high-efficiency power supplies.
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GaN Systems GS6100x 100V GaN Transistors GaN Systems GS6100x 100V GaN Transistors
09/03/2014 -
Designed for high frequency, high efficiency power conversion in the low inductance GaNPX™ package.
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GaN Systems GS6650x 650V GaN Transistors GaN Systems GS6650x 650V GaN Transistors
09/02/2014 -
Designed for high frequency, high efficiency power conversion in the low inductance GaNPX™ package.
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International Rectifier 600V Trench Ultra-fast 66xx Series IGBTs International Rectifier 600V Trench Ultra-fast 66xx Series IGBTs
08/29/2014 -
Optimized for welding and soft-switching applications with low conduction and switching losses.
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