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STMicroelectronics M Series Trench Gate Field-Stop IGBTs STMicroelectronics M Series Trench Gate Field-Stop IGBTs
12/18/2014 -
Optimum compromise in performance to maximize the efficiency of inverter systems.
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Diodes Incorporated DMT6016LPS Enhancement Mode MOSFET Diodes Incorporated DMT6016LPS Enhancement Mode MOSFET
12/18/2014 -
60V N-Channel MOSFET; POWERDI5060-8  case w/a <1.1mm package profile. Ideal for thin applications.
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Diodes Incorporated DMT5015LFDF Enhancement Mode MOSFET Diodes Incorporated DMT5015LFDF Enhancement Mode MOSFET
12/18/2014 -
0.6mm 50V N-Channel Enhancement Mode MOSFET ideal for low-profile applications.
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Diodes Incorporated DXT1300 High Voltage Power Transistors Diodes Incorporated DXT1300 High Voltage Power Transistors
12/09/2014 -
450V NPN High Voltage Power Transistors w/a high continuous collector current rating of 1.5A.
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ON Semiconductor Field Stop II Series IGBTs ON Semiconductor Field Stop II Series IGBTs
12/09/2014 -
Robust, cost effective Field Stop II Trench construction that provides superior performance.
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Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs
12/09/2014 -
Designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance.
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Central Semiconductor P-Channel Enhancement Mode MOSFETs Central Semiconductor P-Channel Enhancement Mode MOSFETs
12/04/2014 -
P-channel MOSFETs featuring low rDS(ON) and low threshold voltage.
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TriQuint Semiconductor TGF3015-SM GaN HEMT TriQuint Semiconductor TGF3015-SM GaN HEMT
11/21/2014 -
A 10W, 50Ω input matched discrete GaN on SiC HEMT operating from 30MHz to 3GHz.
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TriQuint Semiconductor TGF2819-FS/FL RF Power Transistors TriQuint Semiconductor TGF2819-FS/FL RF Power Transistors
11/13/2014 -
100W Peak Power, 20W Average Power, 32V, DC - 3.5GHz, GaN RF Power Transistors.
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Vishay SiA936EDJ Dual N-Channel MOSFET Vishay SiA936EDJ Dual N-Channel MOSFET
10/16/2014 -
Designed to save space and increase power efficiency in portable electronics, featuring the industry's lowest on-resistance for 20 V devices.
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STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs
10/14/2014 -
High speed IGBTs with a 5μs minimum short circuit withstand time at TJ=150°C.
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NXP Semiconductors BLF6G20LS-110 Power LDMOS Transistors NXP Semiconductors BLF6G20LS-110 Power LDMOS Transistors
09/30/2014 -
110W LDMOS power transistor for base station applications at frequencies from 1800MHz to 2000MHz.
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NXP Semiconductors BFU5x NPN Wideband Silicon RF Transistors NXP Semiconductors BFU5x NPN Wideband Silicon RF Transistors
09/25/2014 -
AEC-Q101 qualified, low noise, high breakdown RF transistors suitable for applications up to 2GHz.
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Diodes Incorporated ULN200xA High Voltage, High Current Darlington Transistor Arrays Diodes Incorporated ULN200xA High Voltage, High Current Darlington Transistor Arrays
09/24/2014 -
Includes seven open collector common emitter pairs. Each pair is rated at 500mA.
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Toshiba U-MOSVIII-H Power MOSFETs Toshiba U-MOSVIII-H Power MOSFETs
09/24/2014 -
Provides high-speed switching & low drain-source on-resistance for high-efficiency power supplies.
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GaN Systems GS6100x 100V GaN Transistors GaN Systems GS6100x 100V GaN Transistors
09/03/2014 -
Designed for high frequency, high efficiency power conversion in the low inductance GaNPX™ package.
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GaN Systems GS6650x 650V GaN Transistors GaN Systems GS6650x 650V GaN Transistors
09/02/2014 -
Designed for high frequency, high efficiency power conversion in the low inductance GaNPX™ package.
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International Rectifier 600V Trench Ultra-fast 66xx Series IGBTs International Rectifier 600V Trench Ultra-fast 66xx Series IGBTs
08/29/2014 -
Optimized for welding and soft-switching applications with low conduction and switching losses.
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International Rectifier IRF540N/Z Advanced HEXFET® Power MOSFETs International Rectifier IRF540N/Z Advanced HEXFET® Power MOSFETs
08/12/2014 -
Advanced processing techniques to achieve extremely low on-resistance per silicon area.
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Cree GaN HEMTs Cree GaN HEMTs
08/12/2014 -
Offer greater power density and wider bandwidths compared to Si and GaAs transistors.
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Infineon Technologies OptiMOS™ Fast Diode (FD) Power MOSFETs Infineon Technologies OptiMOS™ Fast Diode (FD) Power MOSFETs
08/08/2014 -
Infineon's latest generation N-channel power MOSFETs in 200V and 250V options.
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STMicroelectronics STH315N10F7 STripFET VII DeepGATE Power MOSFETs STMicroelectronics STH315N10F7 STripFET VII DeepGATE Power MOSFETs
08/01/2014 -
AEC-Q101-qualified STripFET™ VII DeepGATE™ Power MOSFETs w/ultra-low on-state resistance.
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ROHM Semiconductor N-Channel SiC Power MOSFETs ROHM Semiconductor N-Channel SiC Power MOSFETs
07/30/2014 -
No tail current during switching, resulting in faster operation and reduced switching loss.
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Fairchild Semiconductor 150V P-Channel PowerTrench® MOSFETs Fairchild Semiconductor 150V P-Channel PowerTrench® MOSFETs
07/30/2014 -
Featuring very low on resistance and low gate charge, ideal for load switching applications.
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Fairchild Semiconductor Automotive N-Channel PowerTrench® MOSFETs Fairchild Semiconductor Automotive N-Channel PowerTrench® MOSFETs
07/24/2014 -
Designed for automotive applications, are RoHS compliant and qualified to AEC Q101.
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