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Home » NEWEST Products » New by Category » Semiconductors » Discrete Semiconductors » STMicroelectronics IGBT HB Series - STM
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STMicroelectronics 650V HB Series Trench Gate Field-Stop IGBTs

STMicroelectronics IGBT HB Series

STMicroelectronics 650V HB series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Learn More About STMicroelectronics Power MOSFETs & IGBTs for SMPS
Learn More About STMicroelectronics 600-650V IGBTs
newElectronics Article: IGBTs cut energy loses, improve efficiency

  • Maximum junction temperature: TJ = 175°C
  • High speed switching series
  • Minimized tail current
  • Very low saturation voltage
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance

  • Very fast soft recovery antiparallel diode
  • Lead free package

  • Applications
    • Photovoltaic inverters
    • High frequency converters
Part NumberPackage / CaseCollector- Emitter Voltage VCEO MaxContinuous Collector Current at 25 CPd - Power DissipationData Sheet

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