STMicroelectronics 650V HB Series
Trench Gate Field-Stop IGBTs
STMicroelectronics 650V HB Series Trench Gate Field-Stop IGBTs are IGBTs that are developed using an advanced proprietary trench gate and field stop structure. These devices represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a minimal collector current turn off tail as well as very low saturation voltage (Vce(sat)) down to 1.6V (typical), minimizing energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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newElectronics Article: IGBTs cut energy loses, improve efficiency
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