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Home » NEWEST Products » New by Category » Semiconductors » Discrete Semiconductors » CAS300M12BM2 Z-FET MOSFET and Z-Rec Diode - Cree
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Cree CAS300M12BM2 Z-FET MOSFET and Z-Rec Diode

Cree CAS300M12BM2 Z-FET MOSFET and Z-Rec Diode

Cree CAS300M12BM2 300A/1.2kV, all-silicon carbide half-bridge module is the largest current (lowest on-resistance) product available to the open market and manufactured in an industry standard 62mm housing that is prevalent in the high power industry. It is priced to impact mainstream markets like induction heating, active front end motor drives, and central solar inverters. This low-loss 300A SiC MOSFET solution can permit a dramatic reduction in the number of modules required when compared with 600A Silicon IGBT modules in comparable applications. Higher frequency operation supports reduced system size, lower weight, smaller magnetics, decreased cooling requirements and a reduction in complexity can benefit reliability.


Features and Benefits
  • Ultra Low Loss
  • High-Frequency Operation
  • Zero Reverse Recovery Current from Diode
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, fail-safe device operation
  • Ease of paralleling
  • Copper baseplate and aluminum nitride insulator
  • Package: 62 mm x 106 mm x 30 mm
  • Enables compact and lightweight systems
  • High efficiency operation
  • Mitigates over-voltage protection
  • Reduces thermal requirements
  • Enables simplified topologies

Applications
  • Induction Heating
  • Motor Drives
  • Solar and Wind Inverters
  • UPS and SMPS
  • Traction

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