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Home » NEWEST Products » New by Manufacturer » Semelab / TT Electronics » Semelab Silicon Carbide Power Devices
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Semelab / TT Electronics

 Semelab / TT Electronics Silicon Carbide (SiC) Power Devices


Semelab / TT Electronics brings together the unique attributes of Silicon Carbide and the advanced capability of Semelab packaging to offer unprecedented performance and reliability. Semelab now offers ultra fast recovery power rectifiers, power schottky rectifier diode bridge, schottky rectifiers, and a normally-off power JFET designed with silicon carbide to offer high reliability, high temperature operation, and various levels of screening and qualification as required. These devices offer junction temperatures up to 230ºC, higher power dissipation, smaller footprints, hermetic packaging, and reduced cooling requirements. This makes these devices ideal for applications that require less cooling, are for harsher environments, and new applications with a high performance design and less costly system implementation.

Ultra Fast Recovery Diode

 

Semelab's SML05SC06D3A offers a Silicon Carbide Ultra Fast Recovery Power Rectifier in a hermetic ceramic surface mount package that has a peak repetitive reverse voltage of 600 V and an average forward current rating of 5.0 A. This package is a drop-in replacement for the D-5B or E-MELF package. There is no reverse recovery or forward recovery on this compact silicon carbide schottky diode. With a junction temperature range of -55 to +225º C this device is ideal for down-hole high temperature applications, space level, aerospace engines, and nacelles applications.

Semelab Silicon Carbide Ultra Fast Recovery Diode 
Features
  • VR(max) = 600V
  • IF(avg) = 5A
  • VF(typ) = 1.5V
  • DLCC3 Hermetic Ceramic Surface Mount Package Designed
    as a Drop In Replacement for "D-5B"/ "E-MELF" Package
  • No Reverse Recovery
  • No Forward Recovery
  • High-Reliability Screening Options
Applications
  • Down-Hole High Temperature
  • Space Level Screened Parts
  • Aerospace Engines and Nacelles
 
Additional Resources:

Schottky Diode Bridge

 

The Semelab SML010FBDH06 offers a 600 V, 10 A, Silicon Carbide Full Bridge Rectifier configuration. This device has a high operating temperature of Tj = 200ºC which makes this device ideal for space and aviation applications. Features include an effective zero reverse and forward recovery, high speed low loss switching, high frequency operation and high-reliability screening options available. Typical applications include motor drives, UPS, induction heating and SMPS.


Additional Resources:

Semelab Silicon Carbide Schottky Diode Bridge 
Features
  • 600V, 10A Full Bridge Rectifier Configuration
  • High Temperature Operation Tj = 200°C
  • Effective Zero Reverse and Forward Recovery
  • High Speed Low Loss Switching
  • High Frequency Operation
  • High-Reliability Screening Options Available
Applications
  • Motor Drives
  • UPS
  • Induction Heating
  • SMPS
 
 

Schottky Rectifiers

 

Semelab's SML10SIC06YC and SML020DH12 offer Silicon Carbide Schottky Diodes with high operating temperature and exhibit low forward voltage. These devices are suitable for high frequency hard switching applications where system efficiency and reliability are paramount. These devices are ideal for motor drives, UPS, induction heating and SMPS applications.

Additional Resources:
Semelab Silicon Carbide Schottky Rectifiers 
Features
  • Repetitive Peak Reverse Voltage (VRRM):
SML10SIC06YC: 600 V; SML020DH12: 1200 V
  • Average Forward Current (IF(AVG)):
SML10SIC06YC: 10 A; SML020DH12: 20 A
  • Effective Zero Reverse and Forward Recovery
  • High Speed Low Loss Switching
  • High Frequency Operation
  • High-Reliability Screening Options Available
 
Applications
  • Motor Drives
  • UPS
  • Induction Heating
  • SMPS

Normally-Off JFET

 

Semelab's SML100M12MSF Normally-Off JFET offers a Silicon Carbide device with an RDS(on) of 0.100Ω (Max) and includes high temperature opertation of 200ºC (Max). The drain-source blocking voltage for this device is 1200 V and has a pulsed drain current rating of 34 A. Features include low gate charge, intrinsic capacitance, positive temperature coefficient, and temperature independent switching behavior. Typical applications for this Normally-Off JFET include motor drives, UPS, induction heating, and SMPS.

Additional Resources:

 

Semelab Silicon Carbide Normally-Off JFET 
Features
  • Low RDS(on): 0.100 Ω (Max)
  • High Temperature Operation: Tj = 100ºC
  • Low Gate Charge and Intrinsic Capacitance
  • Positive Temperature Coefficient
  • Temperature Independent Switching Behavior
Applications
  • Motor Drives
  • UPS
  • Induction Heating
  • SMPS
 



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  • Semelab / TT Electronics
  • Semiconductors|Discrete Semiconductors|Diodes & Rectifiers|Transistors (FETs, Bipolars & IGBTs)