ROHM SiC Schottky Barrier Diodes
ROHM Semiconductor's SiC Schottky Barrier Diodes have a total capacitive charge (Qc) that is small, which reduces switching loss, and enables high-speed switching operations. In addition, unlike silicon based fast recovery diodes where the trr increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance. Ideal for use as key devices in a variety of applications including inverters and chargers for EV and solar power conditioners.
- Low Surge, Low Switching Loss
- Shorter Recovery Time
- Reduced Temperature Dependence
- High-Speed Switching Possible