ON Semiconductor NMLU1210
Dual 20V N-Channel MOSFETON Semiconductor's NMLU1210 Dual 20V N-Channel MOSFET includes a dual 3.2A Schottky Barrier Diode in a compact 4.0 x 4.0 x 0.5 mm µCool™ package. Features of this N-Channel MOSFET include full-bridge rectifier block, up to 3.2A operation, low RDS(on) MOSFET to minimize conduction loss, low gate charge, low VF schottky diode, and ultra low inductance package. Typical applications include wireless charging, AC-DC rectification, and power management applications for portable products such as cell phones, PMP, DSC, GPS and many others.
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Features
- Full−Bridge Rectifier Block
- Up to 3.2 A operation
- Low RDS(on) MOSFET to minimize conduction loss
- Low gate charge MOSFET
- Low VF Schottky diode
- Ultra Low Inductance Package
- This Device uses Halogen−Free Molding Compound
- These are Pb−Free Devices
Applications
- Wireless Charging
- AC−DC Rectification
- Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others
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