Contact Mouser (USA)  (800) 346-6873     |     Feedback        
View Cart     |     Change Location  USD
United States United States

Please confirm your currency selection:

US Dollars
Home » NEWEST Products » New by Manufacturer » ON Semiconductor » NGTB30N120L2WG IGBT - ON Semiconductor
NEWEST Products
ON Semiconductor NGTB30N120L2WG IGBT

ON Semiconductor NGTB30N120L2WG IGBT

ON Semiconductor NGTB30N120L2WG IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Features
  • Collector-emitter voltage: 1200V
  • VCEsat: 1.7V
  • Eoff: 1.4mJ
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • 10µs Short Circuit Capability
  • Pb−Free Device
Applications
  • Motor Driver Inverter
  • Industrial Switching
  • Welding
Diagram
Diagram
Sign-Up for New Product Announcements from Mouser
  • ON Semiconductor