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Home » NEWEST Products » New by Manufacturer » NXP Semiconductors » NXP High Performance RF
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NXP High Performance RF

NXP enables designers to meet the specifications of the most demanding RF applications. With NXP RF products, you can design systems to the highest specifications while retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. Whether you're looking to improve RF performance , design a highly efficient signal chain, or break new ground with an innovative ISM application, NXP 's creative thinking and expert support can help you every step of the way.

A clear industry leader in high performance RF , NXP annually ships more than 4 billion products. These high-performance RF products play a critical role in a variety of applications - from satellite receivers , cellular base stations , and broadcast transmitters to ISM ( Industrial , Scientific , and Medical ), aerospace , and defense applications. Innovative Doherty power amplifier architectures , JESD204A serialized data interfaces, and minute GPS LNA s are among the constant innovations NXP places at your fingertips.

NXP High Performance RF Resources
NXP's RF power transistors for broadcast, ISM and defense and aerospace applications Video

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NXP Varicap diodes
Why choose NXP semiconductors' varicap diodes :
  • Direct matching process
  • Small tolerances
  • Complete portfolio covering broad frequency range and variety in package (including leadless)

Varicap Diodes Selection Guide

Part Number Package Cd max. (pF) Cd min. (pF) Cd ratio (pF) Cd typ. (pF) Capacitance ratio RS typ
BB131 SOD323 1.055@VR=28V 0.7@VR=28V 14 14@0.5-28V
3
BB135 SOD323 2.1@VR=28V 1.7@VR=28V 10 10@0.5-28V
0.75
BB145B SOD523 2.95@VR=4V 7.4@VR=1V 2.55@VR=4V 6.4@VR=1V 2.2@min. 0.6
BB148 SOD323 2.75@VR=28V 2.4@VR=28V 15@1-28V 15@1-28V 0.9
BB149 SOD323 2.25@VR=28V 1.9@VR=28V 9@1-28V 9@1-28V 0.75
BB149A SOD323 2.225@VR=28V 1.951@VR=28V 9.7@1-28V 9@1-28V 0.75
BB152 SOD323 2.89@VR=28V 2.48@VR=28V 20.6@1-28V (min) 22@1-28V 1.2
BB153 SOD323 2.75@VR=28V 2.36@VR=28V 13.5@1-28V (min) 15@1-28V 0.8
BB156 SOD323 9.6@VR=4V 17.6@VR=1V 7.6@VR=4V 14.4@VR=1V 3.3@1-7.5V 1.86@typ. 0.4
BB178 SOD523 2.75@VR=28V 2.36@VR=28V 13.5@1-28V (min) 15@1-28V 0.8
BB178LX SOD882T 2.754@VR=28V 2.361@VR=28V 15@1-28V 0.7
BB179 SOD523 2.225@VR=28V 1.951@VR=28V 9.7@1-28V 9.0@1-28V 0.75
BB179B SOD523 2.25@VR=28V 1.9@VR=28V 9.2@1-28V 9.0@1-28V 0.75
BB179BLX SOD882T 2.25@VR=28V 1.90@VR=28V 9.0@1-28V 0.65
BB179LX SOD882T 2.25@VR=28V 1.951@VR=28V 9.0@1-28V 0.65
BB181 SOD523 1.055@VR=28V 0.7@VR=28V 14 14@0.5-28V 3
BB181LX SOD882T 1.055@VR=28V 0.7@VR=28V 14@0.5-28V 2
BB182 SOD523 2.89@VR=28V 2.48@VR=28V 20.6@1-28V (min) 22@1-28V 1.2
BB182LX SOD882T 2.89@VR=28V 2.48@VR=28V 22@1-28V 1
BB184 SOD523 2.13@VR=10V 1.87@VR=10V 7@1-10V 0.65
BB187 SOD523 2.92@ VR=25V 2.57@VR=25V 11@2-25V 11@2-25V (min) 0.75
BB187LX SOD882T 2.92@VR=25V 2.57@VR=25V 11@2-25V (min) 0.75
BB201 SOT23 29.7@VR=7.5V 102@VR=1V 25.5@VR=7.5V 89@VR=1V 3.1@1-7.5V 0.3
BB202 SOD523 11.2@VR=2.3V 33.5@VR=0.2V 7.2@VR=2.3V 28.2@VR=0.2V 2.5 @ min 0.35
BB202LX SOD882T 11.2@VR=2.3V 33.5@VR=0.2V 7.2@VR=2.3V 28.2@VR=0.2V 2.5 @ min 0.35
BB207 SOT23 29.7@VR=7.5V 86@VR=1V 25.5@VR=7.5V 76@VR=1V 2.6 0.2
BB208-02 SOD523 5.4@VR=7.5V 23.2@VR=1V 4.5@VR=7.5V 19.9@VR=1V 2.6 0.35
BB208-03 SOD323 5.4@VR=7.5V 23.2@VR=1V 4.5@VR=7.5V 19.9@VR=1V 2.6 0.35
BBY40 SOT23 6@VR=28V 4.3@VR=28V 5.5@3-25V 5.5@3-25V 0.7
NXP PIN diodes
Why choose NXP semiconductors' PIN diodes :
  • Broad portfolio
  • Unrivalled performance
  • Low series inductance
  • Low insertion loss
  • Low capacitance

PIN Diode Selection Guide

Part Number Package IF max (mA) RD @ IF=0.5 mA AND F=100 MHz max ( Ohm) RD @ IF=10 mA AND F=100 MHz max ( Ohm) Rd NOTE1 ( Ohm) Rd NOTE2 ( Ohm) VR max (V) tL @IF=10 mA AND IR=6 mA tL NOTE6 (µs)
BAP1321-02 SOD523 100 5 1.8 5 1.8 60 0.5 0.5
BAP1321-03 SOD323 100 5 1.8 3.5 1.2 100 0.5
BAP1321-04 SOT23 100 5 1.8 3.5 1.2 100 0.5
BAP1321LX SOD882T 100 5 1.8 3.5 1.2 100 0.5
BAP142LX SOD882T 100 5 1.8 5 1.8 50 0.5 0.5
BAP50-02 SOD523 50 40 5 25 3 50 1.05 1.04
BAP50-03 SOD323 100 40 5 0.9 50 0.17
BAP50-04 SOT23 50 40 5 25 3 50 1.05 1.04
BAP50-04W SOT323 50 40 5 25 3 50 1.05 1.04
BAP50-05 SOT23 50 40 5 25 3 50 1.05 1.04
BAP50-05W SOT323 50 40 5 25 3 50 1.05 1.04
BAP50LX SOD882T 50 40 5 25 3 50 1.05 1.04
BAP51-02 SOD523 60 9 2.5 60 0.55
BAP51-03 SOD323 60 9 2.5 5.5 1.5 60 0.55 0.55
BAP51-04W SOT323 50 9 2.5 5.5 1.5 50 0.55 0.55
BAP51-05W SOT323 60 9 2.5 9 2.5 60 0.55 0.55
BAP51-06W SOT323 50 9 2.5 50 0.55
BAP51LX SOD882T 60 9 2.5 60 0.55
BAP55LX SOD882T 100 9 2.5 3.4 1 50 0.55 0.55
BAP63-02 SOD523 100 3.5 1.8 50 0.31
BAP63-03 SOD323 100 3.5 1.8 2 50 0.31
BAP63-05W SOT323 100 3.5 1.8 3.5 1.8 50 0.31 0.35
BAP63LX SOD882T 100 3.5 1.8 3.5 1.8 50 0.31 0.35
BAP64-02 SOD523 175 40 3.8 20 2 200 1.55 1.55
BAP64-03 SOD323 175 40 3.8 20 2 200 1.55 1.55
BAP64-04 SOT23 175 40 3.8 20 2 200 1.55 1.55
BAP64-04W SOT323 100 40 3.8 40 3.8 200 1.55 1.55
BAP64-05 SOT23 175 40 3.8 20 2 200 1.55 1.55
BAP64-05W SOT323 100 40 3.8 0.9 200 1.55
BAP64-06 SOT23 175 40 3.8 200 1.55
BAP64-06W SOT323 100 40 3.8 40 3.8 100 1.55 1.55
BAP64LX SOD882T 100 40 3.8 40 3.8 100 1.55 1.55
BAP65-02 SOD523 100 0.95@IF=5mA 0.9 0.9 30 0.17 0.17
BAP65-03 SOD323 100 0.95@IF=5mA 0.9 0.9 30 0.17 0.17
BAP65-05 SOT23 100 0.95@IF=5mA 0.9 0.9 30 0.17
BAP65-05W SOT323 100 0.95@IF=5mA 0.9 0.9 30 0.17
BAP65LX SOD882T 100 0.95@IF=5mA 0.9 0.9 30 0.17 0.17
BAP70-02 SOD523 100 1 7 7 50 1.25
BAP70-03 SOD323 100 1 7 7 50 1.25
BAP70-04W SOT323 100 1 7 50 1.25
BAP70-05 SOT23 100 1 7 50 1.25
BAP70AM SOT363 100 1 7 50 1.25
NXP Schottky diodes
Why choose NXP semiconductors' Schottky diodes :
  • (Very) low diode capacitance
  • (Very) low forward voltage
  • Single and triple-isolated diode
  • (Ultra / very) small package

Schottky Diodes Selection Guide

Part Number Package VR max (V) IF max (mA) Cd max. (pF) Configuration VFmax (mV) IR max (mA) IR max (µA)
1PS10SB82 SOD882 15 30 1@VR=0V single 340@IF=1mA 0.2@VR=1V 0.2@VR=1V
1PS66SB17 SOT666 4 30 1@VR=0V triple isolated 450@IF=1mA 0.25@VR=3V 0.25@VR=3V
1PS66SB82 SOT666 15 30 1@VR=0V triple isolated 340@IF=1mA 0.2@VR=1V 0.2@VR=1V
1PS70SB82 SOT323 15 30 1@VR=0V single 340@IF=1mA 0.2@VR=1V 0.2@VR=1V
1PS70SB84 SOT323 15 30 1@VR=0V single 340@IF=1mA 0.2@VR=1V 0.2@VR=1V
1PS70SB85 SOT323 15 30 1@VR=0V dual c.c. 340@IF=1mA 0.2@VR=1V 0.2@VR=1V
1PS70SB86 SOT323 15 30 1@VR=0V dual c.a. 340@IF=1mA 0.2@VR=1V 0.2@VR=1V
1PS76SB17 SOD323 4 30 1@VR=0V single 450@IF=1mA 0.25@VR=3V 0.25@VR=3V
1PS79SB17 SOD523 4 30 1@VR=0V single 450@IF=1mA 0.25@VR=3V 0.25@VR=3V
1PS88SB82 SOT363 15 30 1@VR=0V triple isolated 340@IF=1mA 0.2@VR=1V 0.2@VR=1V
BAT17 SOT23 4 30 1@VR=0V single 450@IF=1mA 1.3@VR=3V 1.3@VR=3V
PMBD353 SOT23 4 30 1@VR=0V dual series 450@IF=1mA 0.3@VR=3V 0.3@VR=3V
PMBD354 SOT23 4 30 1@VR=0V dual series 450@IF=1mA 0.3@VR=3V 0.3@VR=3V


NXP RF Bipolar Transistors

Classified according to transition frequency and noise / gain performance, NXP 's wideband transistors offer a host of package, process and specifications options. The range is now up to its 7th generation, delivering operating frequencies from 100 MHz to 20 GHz

1-3rd Generation NXP RF Bipolar Transistors

Part Number Generation Package fT (typ) (GHz) VCEO (max) (V) IC (max) (mA) Ptot (max) (mW) Polarity GUM (typ) (dB)
BFS17 1st SOT23 1 15 25 300 NPN -
BFS17W 1st SOT323 1.6 15 50 300 NPN -
BFT25 1st SOT23 2.3 5 6.5 30 NPN 18
BFG25A/X 2nd SOT143B 5 5 6.5 32 NPN -
BFG25AW 2nd SOT343N 5 5 6.5 500 NPN -
BFG25AW/X 2nd SOT343N 5 5 6.5 500 NPN 16
BFG31 2nd SOT223 5 -15 -100 1000 PNP 16
BFG35 2nd SOT223 4 18 150 1000 NPN 15
BFG92A/X 2nd SOT143B 5 15 25 400 NPN 16
BFG97 2nd SOT223 5.5 15 100 1000 NPN 16
BFQ149 2nd SOT89 5 -15 -100 1000 PNP 12
BFQ18A 2nd SOT89 4 18 150 1000 NPN -
BFQ19 2nd SOT89 5.5 15 100 1000 NPN 11.5
BFR106 2nd SOT23 5 15 100 500 NPN -
BFR92A 2nd SOT23 5 15 25 300 NPN 14
BFR92AW 2nd SOT323 5 15 25 300 NPN 14
BFS17A 2nd SOT23 2.8 15 25 300 NPN -
BFS25A 2nd SOT323 5 5 6.5 32 NPN -
BFT25A 2nd SOT23 5 5 6.5 32 NPN -
BFT92 2nd SOT23 5 -15 -25 300 PNP 18
BFT92W 2nd SOT323 4 -15 -35 300 PNP 17
BFT93 2nd SOT23 5 -12 -35 300 PNP 16.5
BFT93W 2nd SOT323 4 -12 -50 300 PNP 15.5
BFG135 3rd SOT223 7 15 150 1000 NPN 16
BFG198 3rd SOT223 8 10 100 1000 NPN 18
BFG590 3rd SOT143B 5 15 200 400 NPN 13
BFG590/X 3rd SOT143B 5 15 200 400 NPN 13
BFG591 3rd SOT223 7 15 200 2000 NPN 13
BFG67 3rd SOT143B 8 10 50 380 NPN 17
BFG67/X 3rd SOT143B 8 10 50 380 NPN 17
BFG93A 3rd SOT143B 6 12 35 300 NPN 16
BFG93A/X 3rd SOT143B 6 12 35 300 NPN 16
BFG94 3rd SOT223 6 12 60 700 NPN -
BFQ591 3rd SOT89 7 15 200 2250 NPN 11
BFQ67W 3rd SOT323 8 10 50 300 NPN 13
BFR93A 3rd SOT23 6 12 35 300 NPN 13
BFR93AR 3rd SOT23 6 12 35 300 NPN 13
BFR93AW 3rd SOT323 5 12 35 300 NPN 13

4-4.5th Generation NXP RF Bipolar Transistors

Part Number Generation Package fT (typ) (GHz) VCEO (max) (V) IC (max) (mA) Ptot (max) (mW) Polarity GUM (typ) (dB)
BFG505 4th SOT143B 9 15 18 150 NPN 13
BFG505/X 4th SOT143B 9 15 18 150 NPN 13
BFG520 4th SOT143B 9 15 70 300 NPN 13
BFG520/X 4th SOT143B 9 15 70 300 NPN 13
BFG520/XR 4th SOT143R 9 15 70 300 NPN 13
BFG520W 4th SOT343N 9 15 70 500 NPN 11
BFG520W/X 4th SOT343N 9 15 70 500 NPN 11
BFG540 4th SOT143B 9 15 120 400 NPN 11
BFG540/X 4th SOT143B 9 15 120 400 NPN 11
BFG540/XR 4th SOT143R 9 15 120 400 NPN 11
BFG540W 4th SOT343N 9 15 120 500 NPN 10
BFG540W/X 4th SOT343N 9 15 120 500 NPN 10
BFG540W/XR 4th SOT343R 9 15 120 500 NPN 10
BFG541 4th SOT223 9 15 120 650 NPN 9
BFM505 4th SOT363A 9 8 18 500 NPN 10
BFM520 4th SOT363A 9 8 70 1000 NPN 9
BFQ540 4th SOT89 9 15 120 1200 NPN -
BFQ67 4th SOT23 8 10 50 300 NPN 8
BFR505 4th SOT23 9 15 18 150 NPN 10
BFR505T 4th SOT416 9 15 18 150 NPN 10
BFR520 4th SOT23 9 15 70 300 NPN 9
BFR520T 4th SOT416 9 15 70 150 NPN 9
BFR540 4th SOT23 9 15 120 500 NPN 7
BFS505 4th SOT323 9 15 18 150 NPN 10
BFS520 4th SOT323 9 15 70 300 NPN 9
BFS540 4th SOT323 9 15 120 500 NPN 8
PBR941 4th SOT23 8 10 50 360 NPN 9.5
PBR951 4th SOT23 8 10 100 365 NPN 8
PRF947 4th SOT323 8.5 10 50 250 NPN 10
PRF949 4th SOT416 9 10 50 150 NPN 10
PRF957 4th SOT323 8.5 10 100 270 NPN 9.2
BFG310/XR 4.5 SOT143R 14 6 10 60 NPN 18
BFG310W/XR 4.5 SOT343R 14 6 10 60 NPN 18
BFG325/XR 4.5 SOT143R 14 6 35 210 NPN 18.3
BFG325W/XR 4.5 SOT343R 14 6 35 210 NPN 18.3

5-7th Generation NXP RF Bipolar Transistors

Part Number Generation Package fT (typ) (GHz) VCEO (max) (V) IC (max) (mA) Ptot (max) (mW) Polarity GUM (typ) (dB)
BFG21W 5th SOT343R - 4.5 500 600 NPN 10
BFG403W 5th SOT343R 17 4.5 3.6 16 NPN 22
BFG410W 5th SOT343R 22 4.5 12 54 NPN 21
BFG424F 5th SOT343F 25 4.5 30 135 NPN 23
BFG424W 5th SOT343R 25 4.5 30 135 NPN 22
BFG425W 5th SOT343R 25 4.5 30 135 NPN 20
BFG480W 5th SOT343R 21 4.5 250 360 NPN 16
BFU725F/N1 7th SOT343F 70 2.8 40 136 NPN 18


RF MMICs

NXP's smart RF MMIC s ( Monolithic Microwave IC s) automatically compensate for temperature and process variations. They dramatically reduce board space requirements, integrating transistors, resistors and capacitors into a single device. NXP's extensive selection of 50 Ω gain blocks and low noise devices need no external matching components, reducing overall system costs and increasing reliability.

RF MMIC Selection Guide

Part Number Package 1dB Compression point (dBm) @ (GHz) Enable Gain (dB) Is (mA) NF (dB) Output IP3 (3rd order Intercept Point) (dBm) Ptot max (mW) Vs (V)
BGA2001 SOT343R -4.5 1.8
19.5 4 1.3
135 2.5
BGA2003 SOT343R -4.8 1.8 yes 16 10 1.8
135 2.5
BGA2011 SOT363 10 0.9 Yes 19 15 1.5 135 3
BGA2012 SOT363 10 1.8 yes 16 7 1.7 70 3
BGA2022 SOT363 0.88 5 6 9 4 40 3
BGA2031 SOT363 13 1.9 Yes 23 51 200 3
BGA2709 SOT363 8.3 1 22.7 23.5 4 22 200 5
BGA2711 SOT363 -0.7 1 13.1 12.6 4.8 8.3 200 5
BGA2712 SOT363 0.2 1 21.3 12.3 3.9 11 200 5
BGA2714 SOT363 1 20.4 4.58 2.2 19 200 3
BGA2715 SOT363 -8 1 21.7 4.3 2.6 2.3 200 5
BGA2716 SOT363 8.9 1 22.9 15.9 5.3 22.2 200 5
BGA2717 SOT363 -2.6 1 23.9 8 2.3 10 200 5
BGA2748 SOT363 -9.2 1 21.8 5.7 1.9 -1.9 200 3
BGA2771 SOT363 12.1 1 21.4 33.3 4.5 21.9 200 3
BGA2776 SOT363 7.2 1 23.2 24.4 4.9 18.6 200 5
BGA6289 SOT89 17 0.9 15 84 3.5 31 480 8
BGA6489 SOT89 20 0.9 20 78 3.1 33 480 8
BGA6589 SOT89 21 0.9 22 81 3 33 480 9
BGM1011 SOT363 12.2 1 30 25.5 4.7 23 200 5
BGM1012 SOT363 5.6 1 20.1 14.6 4.8 18 200 3
BGM1013 SOT363 12 1 35.5 27.5 4.6 22.7 200 5
BGM1014 SOT363 11.2 1 32.3 21 4.2 20.5 200 5


Small-Signal FETs

NXP offers a wide range of proven RF small-signal FET s from N-channel dual gate MOSFET s through to dedicated P-channel JFET s for switching applications.

N-Channel junction FETs Selection Guide

Part Number Package -V(P)GS (V) CRS (pF) IDSS (mA) IG (mA) VDSmax (V) YFS (ms)
BF245A SOT54
1.1 2 to 6.5 10 30 3 to 6.5
BF245B SOT54
1.1 6 to 15 10 30 3 to 6.5
BF245C SOT54 1.1 12 to 25 10 30 3 to 6.5
BF510 SOT23 typ. 0.8 0.4 0.7 to 3 10 20 2.5
BF511 SOT23 typ. 1.5 0.4 2.5 to 7 10 20 4
BF512 SOT23 typ. 2.2 0.4 6 to 12 10 20 6
BF513 SOT23 typ. 3 0.4 10 to 18 10 20 7
BF545A SOT23 0.4 to7.5 0.8 2 to 6.5 10 30 3 to 6.5
BF545B SOT23 0.4 to7.5 0.8 6 to 15 10 30 3 to 6.5
BF545C SOT23 0.4 to7.5 0.8 12 to 25 10 30 3 to 6.5
BF556A SOT23 0.5 to 7.5 0.8 3 to 7 10 30 4.5
BF556B SOT23 0.5 to 7.5 0.8 6 to 13 10 30 4.5
BF556C SOT23 0.5 to 7.5 0.8 11 to 18 10 30 0.5
BF861A SOT23 0.2 to 1.0 2.1 2 to 6.5 10 25 12
BF861B SOT23 0.5 to 1.5 2.1 6 to 15 10 25 16
BF861C SOT23 0.8 to 2.0 2.1 12 to 25 10 25 20
BF862 SOT23 20 1.9 10 to 25 10 25 35
BFR30 SOT23 1.5 4 to 10 5 25 1 to 4
BFR31 SOT23 1.5 1 to 5 5 25 1.5 to 4.5
BFT46 SOT23 1.5 0.2 to 1.5 5 25
PMBFJ308 SOT23 1 to 6.5 1.3 12 to 60 50 25 >10
PMBFJ309 SOT23 1 to 4 1.3 12 to 30 50 25 >10
PMBFJ310 SOT23 2 to 6.5 1.3 24 to 60 50 25 >10
PMBFJ620 SOT363 2 to 6.5 2.5 24 to 60 50 25 10

N-Channel junction FETs for switching Selection Guide

Part Number Package -V(P)GS (V) CRS (pF) IDSS (mA) IDSS max. (mA) IDSS min. (mA) IG (mA) RDS(on) (Ohm) V(P)GS (V) V(P)GS (V) VDSmax (V)
BSR56 SOT23 4 to 10 5 50
50 50 25 10 4 40
BSR57 SOT23 2 to 6 5 20 to 100 100 20 50 40 6 2 40
BSR58 SOT23 0.8 to 4 5 8 to 80 80 8 50 60 4 0.8 40
J108 SOT54 3 to 10 15 80 80 50 8 10 3 25
J109 SOT54 2 to 6 15 40 40 50 12 6 2 25
J110 SOT54 0.5 to 4 15 10 10 50 18 4 0.5 25
J111 SOT54 3 to 10 typ. 3 20 20 50 30 10 3 40
J112 SOT54 1 to 5 typ. 3 5 5 50 50 5 1 40
J113 SOT54 0.5 to 3 typ. 3 2 2 50 100 3 0.5 40
PMBF4391 SOT23 4 to 10 3.5 50 to 150 150 50 50 30 10 4 40
PMBF4392 SOT23 2 to 5 3.5 25 to 75 75 25 50 60 5 2 40
PMBF4393 SOT23 0.5 to 3 3.5 5 to 30 30 5 50 100 3 0.5 40
PMBFJ108 SOT23 3 to 10 15 80 80 50 8 10 3 25
PMBFJ109 SOT23 2 to 6 15 40 40 50 12 6 2 25
PMBFJ110 SOT23 0.5 to 4 15 10 10 50 18 4 0.5 25
PMBFJ111 SOT23 3 to 10 typ. 3 20 20 50 30 10 3 40
PMBFJ112 SOT23 1 to 5 typ. 3 5 5 50 50 5 1 40
PMBFJ113 SOT23 0.5 to 3 typ. 3 2 2 50 100 3 0.5 40

N-Channel Dual Gate MOSFETs Selection Guide

Part Number Package -V(P)GS MAX (V) CIS TYP (pF) COS (pF) ID (mA) IDSS (mA) Noise figure (dB) VDSmax (V) YFS min. (mS)
BF1100 SOT143B 1 2.2 1.4 30 8 to 13 2@800MHz 14 24
BF1100R SOT143R 1 2.2 1.4 30 8 to 13 2@800MHz 14 24
BF1100WR SOT343R 1 2.2 1.4 30 8 to 13 2@800MHz 14 24
BF1101 SOT143B 1 2.2 1.2 30 8 to 16 1.7@800MHz 7 25
BF1101R SOT143R 1 2.2 1.2 30 8 to 16 1.7@800MHz 7 25
BF1101WR SOT343R 1 2.2 1.2 30 8 to 16 1.7@800MHz 7 25
BF1102 SOT363 1 2.8 1.6 40 12 to 20 2@800MHz 7 36
BF1102R SOT363 1 2.8 1.6 40 12 to 20 2@800MHz 7 36
BF1105 SOT143B 1.2 2.2 1.2 30 8 to 16 1.7@800MHz 7 25
BF1105R SOT143R 1.2 2.2 1.2 30 8 to 16 1.7@800MHz 7 25
BF1105WR SOT343R 1.2 2.2 1.2 30 8 to 16 1.7@800MHz 7 25
BF1109 SOT143B 1 2.2 1.3 30 8 to 16 1.5@800MHz 11 24
BF1109R SOT143R 1 2.2 1.3 30 8 to 16 1.5@800MHz 11 24
BF1109WR SOT343R 1 2.2 1.3 30 8 to 16 1.5@800MHz 11 24
BF1201 SOT143B 1 2.6 0.9 30 11 to 19 1.9@800MHz 10 23
BF1201R SOT143R 1 2.6 0.9 30 11 to 19 1.9@800MHz 10 23
BF1201WR SOT343R 1 2.6 0.9 30 11 to 19 1.9@800MHz 10 23
BF1202 SOT143B 1 1.7 0.85 30 8 to 16 1.1@800MHz 10 25
BF1202R SOT143R 1 1.7 0.85 30 8 to 16 1.1@800MHz 10 25
BF1202WR SOT343R 1 1.7 0.85 30 8 to 16 1.1@800MHz 10 25
BF1203 SOT363 1 2.6 0.9 30 11 to19 1.9@800MHz 10 23
BF1204 SOT363 1 1.7 0.85 30 8 to 16 1.1@800MHz 10 25
BF1205 SOT363 1 1.8 2.0 0.75 0.85 30 8 to 16 1.2@800MHz & 1.4@800MHz 26
BF1205C SOT363 1 2.2 2.0 0.9 0.85 30 14 to 24 & 9 to 17 1.4@800MHz & 1.4@800MHz 6 26 28
BF1206 SOT363 1 2.4 1.7 1.1 0.85 30 14 to 23 & 9 to 17 1.6@800MHz & 1.4@800MHz 6 33 29
BF1206F SOT666 2.4 1.7 1.1 0.85 30 3 to 6.5 1.0@800MHz 6 17
BF1207 SOT363 2.2 1.8 0.9 0.8 30 13 to 23 & 9 to 19 1.4@800MHz 6 25 26
BF1208 SOT666 10 100 (max) 3
BF1208D SOT666 30 100 (max) 6
BF1210 SOT363 1 2 0.9 30 14 to 24 1.4@800MHz 6 26
BF1211 SOT143B 1 2.1 0.9 30 11 to 19 1.3@800MHz 6 25
BF1211R SOT143R 1 2.1 0.9 30 11 to 19 1.3@800MHz 6 25
BF1211WR SOT343R 1 2.1 0.9 30 11 to 19 1.3@800MHz 6 25
BF1212 SOT143B 1 1.7 0.9 30 8 to 16 1.1@800MHz 6 28
BF1212R SOT143R 1 1.7 0.9 30 8 to 16 1.1@800MHz 6 28
BF1212WR SOT343R 1 1.7 0.9 30 8 to 16 1.1@800MHz 6 28
BF1214 SOT363 1 2.2 0.9 30 13 to 23 1.4@800MHz 6 25
BF904 SOT143B 1 2.2 1.3 30 8 to 13 2@800MHz 7 22
BF904A SOT143B 1 2.2 1.3 30 8 to 13 2@800MHz 7 22
BF904AR SOT143R 1 2.2 1.3 30 8 to 13 2@800MHz 7 22
BF904AWR SOT343R 1 2.2 1.3 30 8 to 13 2@800MHz 7 22
BF904R SOT143R 1 2.2 1.3 30 8 to 13 2@800MHz 7 22
BF904WR SOT343R 1 2.2 1.3 30 8 to 13 2@800MHz 7 22
BF908 SOT143B 2 3.1 1.7 40 3 to 27 1.5@800MHz 12 36
BF908R SOT143R 2 3.1 1.7 40 3 to 27 1.5@800MHz 12 36
BF908WR SOT343R 2 3.1 1.7 40 3 to 27 1.5@800MHz 12 36
BF909 SOT143B 1 3.6 2.3 40 12 to 20 2@800MHz 7 36
BF909R SOT143R 1 3.6 2.3 40 12 to 20 2@800MHz 7 36
BF909WR SOT343R 1 3.6 2.3 40 12 to 20 2@800MHz 7 36
BF991 SOT143B 2.5 2.1 1.1 20 4 to 25 1.0@800MHz 20 10
BF992 SOT143B 1.3 4 2 40 1.2@800MHz 20 20
BF994S SOT143B 2 2.5 1 30 4 to 20 1@800MHz 20 15
BF996S SOT143B 2.5 2.3 0.8 30 4 to 20 1.8@800MHz 20 15
BF998 SOT143B 2 2.1 1.05 30 2 to 18 1@800MHz 12 21
BF998R SOT143R 2 2.1 1.05 30 2 to 18 1@800MHz 12 21
BF998WR SOT343R 2 2.1 1.05 30 2 to 18 1@800MHz 12 22

N-Channel Single Gate MOSFETs Selection Guide

Part Number Package ID (mA) IGSS max (nA) RDS(on) (Ohm) S21(off) (dB) S21(on) (dB) VDSmax (V) VSG max (V) [S21(Off)]² min [S21(On)]² max
BF1107 SOT23 10 100 20 30 2.5 3 7 30 2.5
BF1108 SOT143B 10 100 20 30 3 3 7 30 3
BF1108R SOT143R 10 100 20 30 3 3 7 30 3
BSS83 SOT143B 50 45 10

P-Channel junction FETs for switching Selection Guide

Part Number Package -V(P)GS (V) -V(P)GS MAX (V) -V(P)GS MIN (V) CRS (pF) CRS TYP (pF) IDSS (mA) IDSS max. (mA) IDSS min. (mA) RDS(on) (Ohm) VDSmax (V)
J174 SOT54 5 to 10 10 5 4 4 20 to 135 135 20 85 30
J175 SOT54 3 to 6 6 3 4 4 7 to 70 70 7 125 30
J176 SOT54 1 to 4 4 1 4 4 2 to 35 35 2 250 30
J177 SOT54 0.8 to 2.25 2.25 0.8 4 4 1.5 to 20 20 1.5 300 30
PMBFJ174 SOT23 5 to 10 10 5 4 4 20 to 135 135 20 85 30
PMBFJ175 SOT23 3 to 6 6 3 4 4 7 to 70 70 7 125 30
PMBFJ176 SOT23 1 to 4 4 1 4 4 2 to 35 35 2 250 30
PMBFJ177 SOT23 0.8 to 2.25 2.25 0.8 4 4 1.5 to 20 20 1.5 300 30


RF Modules

NXP is one of the world's largest suppliers of CATV products, offering optical receivers , power doublers , push-pulls , and reverse amplifiers . We also have complete solutions for a range of optical networking systems , manufactured using the latest processes.

Optical Recivers Selection Guide

Part Number Frequency (MHz) Frequency range (MHz) Noise figure (dB) Output return loss (S22) (dB) Second order distortion (d2) (dB) Slope cable equivalent (SL) (dB) Third order distortion (d3) (dB)
BGO827 40 - 870 40 - 870 9@fmax 11 -57 0 - 2 -73

Power Doublers Selection Guide

Part Number Composite second order distortion (CSO) (dB) Composite triple beat (CTB) (dB) Frequency range (MHz) Gain (dB) Return loss (input/output) (dB) Total current consumption (Itot) (mA)
BGD502 -62 -65 40 - 550 18.5 20/20 435
BGD702 -58 -58 40 - 750 18.5 20/20 435
BGD702N -58 -58 40 - 750 18.5 20/20 435
BGD704 -56 -57 40 - 750 20 20/20 435
BGD712 -63 -58 40 - 750 18.5 23/23 410
BGD712C -63 -62 40 - 750 18.2 - 18.8 17/17 410
BGD714 -62 -61 40 - 750 20.3 23/23 410
BGD802 -56 -54 40 - 870 18.5 20/20 410
BGD804 -54 -53 40 - 480 20 20/20 410
BGD812 -60 -58 40 - 870 18.5 23/23 410
BGD814 -59 -53 40 - 870 20 22/25 410
BGD816L -56 -55 40 - 870 21.2 - 21.8 22/25 375
BGD885 40 - 870 17 20/20 450
CGD1040HI -68 -65 40 - 1003 21 -20/-20 470
CGD1042 -69 -74 40 - 1000 20.5 - 23 20/23 485
CGD1042HI -68 -65 40 - 1003 23 -20/-20 470
CGD1044 -69 -74 40 - 1000 23.5 - 25.5 20/23 485
CGD1044HI -68 -65 40 - 1003 25 -20/-20 470
CGD942C -68 -66 40 - 870 20.5 - 23 18/18 450
CGD944C -68 -66 40 - 870 23 - 25 18/18 450

Push-pulls Selection Guide

Part Number Composite second order distortion (CSO) (dB) Composite triple beat (CTB) (dB) Frequency range (MHz) Gain (dB) Return loss (input/output) (dB) Total current consumption (Itot) (mA)
BGE787B -56 -50 40 - 750 29 20/20 320
BGE788 -52 -49 40 - 750 34 20/20 320
BGE788C -52 -49 40 - 750 33.2 - 35.2 16/16 325
BGE885 40 - 870 17 14/14 240
BGY1085A -56 -53 40 - 1000 18.5 20/20 240
BGY585A -59 -59 40 - 550 18 20/20 240
BGY587 -54 -57 40 - 550 22 20/20 240
BGY587B -57 -57 40 - 550 27 20/20 340
BGY588C -62 -57 40 - 550 33.5-33.7 16/16 345
BGY588N -62 -57 40 - 550 34.5 20/20 340
BGY685A -56 -55 40 - 500 18.2 20/20 240
BGY687 -52 -54 40 - 600 21.5 20/20 240
BGY785A -53 -53 40 - 750 18.5 20/20 240
BGY787 -53 -53 40 - 750 21.5 20/20 240
BGY883 -61 -61 40 - 870 15 20/20 235
BGY885A -61 -61 40 - 870 18.5 20/20 240
BGY887 -57 -55 40 - 870 21.5 20/20 235
BGY887B -60 -60 40 - 870 29 20/20 340
BGY888 -55 -60 40 - 870 34 20/20 340

Reverse Amplifiers Selection Guide

Part Number Composite triple beat (CTB) (dB) Frequency range (MHz) Gain (dB) Return loss (input/output) (dB) Total current consumption (Itot) (mA)
BGR269 -57 5 - 200 35 20/20 160
BGY66B -66 5 - 120 25 20/20 135
BGY67 -67 5 - 200 22 20/20 230
BGY67A -67 5 - 200 24 20/20 230
BGY68 -68 5 - 75 30 20/20 135


RF Power Transistors

Along with bipolar solutions, NXP - the LDMOS world leader - offers you an RF power transistor range that delivers best in-class efficiency, power, ruggedness and covers all frequency ranges for basestation , broadcast / ISM and aerospace & defense applications.

Basestations (LDMOS) Selection Guide

Part Number Package frange (MHz) PL (W) ηD (%) Gp (dB) VDS (V) mode of operation
BLD6G21L-50 SOT1130A 2010 - 2025 8 43 14.5 28
BLD6G21LS-50 SOT1130B 2010 - 2025 8 43 14.5 28
BLD6G22L-50 SOT1130A 2110 - 2170 8 40 14 28
BLD6G22LS-50 2110 - 2170 8 40 14 28
BLF1043 SOT538A 800 - 1,000 10 38 16.5 26 1-TONE; 2-TONE
BLF1046 SOT467C 860 - 1,000 45 46 14 26 2-TONE; 1-TONE
BLF2043F SOT467C 2200 10 30 11 26 CW
BLF3G21-30 SOT467C 2200 30 35 13.5 26 2-TONE
BLF3G21-6 SOT538A 1,800 - 2,200 30 39 15.5 26 2-TONE
BLF3G22-30 SOT608A 2,000 - 2,200 30 33 14 28 2-TONE
BLF6G10-135RN SOT502A 700 - 1000 26.5 28 21 28
BLF6G10-160RN SOT502A 700 - 1000 32 27 22.5 32
BLF6G10-200RN SOT502A 688 - 1000 40 28.5 20 28
BLF6G10-45 SOT608A 700 - 1,000 1 7.8 22.5 28 WCDMA
BLF6G10L-260PRN SOT539A 800 - 1000 40 26.5 22 28
BLF6G10LS-135RN SOT502B 700 - 1000 26.5 28 21 28
BLF6G10LS-160RN SOT502B 700 - 1000 32 27 22.5 32
BLF6G10LS-200RN SOT502B 688 - 1000 40 28.5 20 28
BLF6G10LS-260PRN SOT539B 800 - 1000 40 26.5 22 28
BLF6G10S-45 SOT608B 700 - 1,000 1 8 23 28 WCDMA
BLF6G15L-250PBRN SOT1110A 1450 - 1550 60 33 18.5 28
BLF6G20-110 SOT502A 1,800 - 2,000 25 32 19 28 WCDMA
BLF6G20-180PN SOT539A 1800 - 2000 50 29.5 18 32
BLF6G20-180RN SOT502A 1800 - 2000 40 27 17.2 30
BLF6G20-230PRN SOT539A 1,805 - 1,880 50 29.5 16.5 30
BLF6G20-40 SOT608A 1800 - 2000 2.5 15 18.8 28
BLF6G20-45 SOT608A 1,800 - 2,000 2.5 14 19.2 28 WCDMA
BLF6G20-75 SOT502A 1,800 - 2,000 29.5 37.5 19 28 EDGE
BLF6G20LS-110 SOT502B 1,800 - 2,000 25 32 19 28 WCDMA
BLF6G20LS-140 SOT502B 1800 - 2000 35.5 30 16.5 28 WCDMA / UMTS
BLF6G20LS-180RN SOT502B 1800 - 2000 40 27 17.2 30
BLF6G20LS-75 SOT502B 1,800 - 2,000 29.5 37.5 19 28 EDGE
BLF6G20S-230PRN 1,805 - 1,880 50 29.5 16.5 30
BLF6G20S-45 SOT608B 1,800 - 2,000 2.5 14 19.2 28 WCDMA
BLF6G21-10G SOT538A HF - 2200 2 31 19.3 28
BLF6G22-180PN SOT539A 2,000 - 2,200 50 27.5 17.5 32 WCDMA
BLF6G22-180RN SOT502A 2000 - 2200 40 25 16 30
BLF6G22-45 SOT608A 2,000 - 2,200 2.5 13 18.5 28 WCDMA
BLF6G22LS-100 SOT502B 2,000 - 2,200 25 29 18.5 28 WCDMA
BLF6G22LS-130 SOT502B 2,000 - 2,200 30 28.5 17 28 WCDMA
BLF6G22LS-180PN SOT539B 2,000 - 2,200 50 27.5 17.5 32 WCDMA
BLF6G22LS-180RN SOT502B 2000 - 2200 40 25 16 30
BLF6G22LS-75 SOT502B 2,000 - 2,200 17 30.5 18.7 28 WCDMA
BLF6G22S-45 SOT608B 2,000 - 2,200 2.5 13 18.5 28 WCDMA
BLF6G27-10 SOT975B 2500 - 2700 2 20 19 28
BLF6G27-100 SOT502A 2500 - 2700 14 23 17 28
BLF6G27-10G SOT975C 2500 - 2700 2 20 19 28
BLF6G27-135 SOT502A 2,500 - 2,700 20 22.5 16 32
BLF6G27-45 SOT608A 2,500 - 2,700 7 24 18 28
BLF6G27-75 SOT502A 2500 - 2700 9 23 17 28
BLF6G27L-50BN SOT1112A 2500 - 2700 13 14 16.5 28
BLF6G27LS-100 SOT502B 2500 - 2700 14 23 17 28
BLF6G27LS-135 SOT502B 2,500 - 2,700 20 22.5 16 32
BLF6G27LS-50BN SOT1112B 2500 - 2700 13 14 16.5 28
BLF6G27LS-75 SOT502B 2500 - 2700 9 23 17 28
BLF6G27S-45 SOT608B 2,500 - 2,700 7 24 18 28
BLF6G38-10 SOT975B 3,400 - 3,600 2 20 14 28
BLF6G38-100 SOT502A 3,400 - 3,600 18.5 21.5 13 28
BLF6G38-10G SOT975C 3,400 - 3,600 2 20 14 28
BLF6G38-25 SOT608A 3,400 - 3,800 4.5 24 15 28
BLF6G38-50 SOT502A 3,400 - 3,800 9 23 14 28
BLF6G38LS-100 SOT502B 3,400 - 3,600 18.5 21.5 13 28
BLF6G38LS-50 SOT502B 3,400 - 3,800 9 23 14 28
BLF6G38S-25 SOT608B 3,400 - 3,800 4.5 24 15 28
BLF7G15LS-200 SOT502B 1450 - 1550 50 29 19.5 28
BLF7G15LS-300P SOT539B 1450 - 1550 85 31 18 28
BLF7G20L-200 SOT502A 1805 - 1990 50 30 17 28
BLF7G20L-250P SOT539A 1805 - 1880 70 35 18 28
BLF7G20L-90P 1800 - 2000 84 54 19 28
BLF7G20LS-140P SOT1121B 1800 - 2000 125 57 17.5 28
BLF7G20LS-200 SOT502B 1805 - 1990 50 30 17 28
BLF7G20LS-250P SOT539B 1805 - 1880 70 35 18 28
BLF7G20LS-90P SOT1121B 1800 - 2000 84 54 19 28
BLF7G22L-200 SOT502A 2110 - 2170 55 18.5 28
BLF7G22L-250P SOT539A 2110 - 2170 70 30 17 28
BLF7G22LS-130 SOT502B 2110 - 2170 30 32 18.5 28
BLF7G22LS-200 2110 - 2170 55 18.5 28
BLF7G22LS-250P SOT539B 2110 - 2170 70 30 17 28
BLF7G24L-100 SOT502A 2300 - 2400 14 24 18 28
BLF7G27L-100 2500 - 2700 14 24 17.5 28
BLF7G27L-75P SOT1121A 2300 - 2700 12 26 17 28
BLF7G27LS-100 SOT502B 2500 - 2700 14 24 17.5 28
BLF7G27LS-75P SOT1121B 2300 - 2700 12 26 17 28
BLM6G10-30 SOT834-1 920 - 960 2 11.5 29 28 WCDMA
BLM6G10-30G SOT822-1 920 - 960 2 11.5 29 28 WCDMA
BLM6G22-30 SOT834-1 2,100 - 2,200 2 9 30 28 WCDMA
BLM6G22-30G SOT822-1 2,100 - 2,200 2 9 30 28 WCDMA

Broadcast / ISM (LDMOS) Selection Guide

Part Number Package frange (MHz) PL (W) ηD (%) Gp (dB) VDS (V) mode of operation
BLF369 SOT800-2 10 - 500 500 47 19 32 2-TONE
BLF571 SOT467C 10 - 500 20 70 27.5 50 1-TONE
BLF573 SOT502A 10 - 500 300 70 27.2 50 CW
BLF573S SOT502B 10 - 500 300 70 27.2 50 CW
BLF574 SOT539A 10 - 500 500 70 26.5 50 1-TONE
BLF578 SOT539A 10 - 500 1000 75 26 50 CW
BLF645 SOT540A HF - 1400 100 45 18 32 2-TONE
BLF647 SOT540A 0 - 800 120 45 13 32 2-TONE
BLF861A SOT540A 470 - 860 150 60 14 32 2-TONE
BLF871 SOT467C HF - 1000 100 47 21 40 2-TONE
BLF871S HF - 1000 100 47 21 40 2-TONE
BLF878 SOT979A 470 - 860 300 46 21 42 2-TONE
BLF881 SOT467C HF - 1000 140 49 21 50 2-TONE
BLF881S SOT467B HF - 1000 140 49 21 50 2-TONE
BLF888 SOT979A 470 - 860 250 46 19 50 2-TONE

Brodcast / ISM (VDMOS) Selection Guide

Part Number Package Gp (dB) PL (W) VDS (V) frange (MHz) mode of operation product application description ηD (%)
BLF145 SOT123A 20 30 28 HF 2-TONE SSB transmitters in the HF frequency range 40
BLF147 SOT121B 19 20 28 28 - 108
Industrial and military applications in the HF/VHF frequency range 40
BLF175 SOT123A 24 30 50 HF - VHF 2-TONE large signal amplifiers in the HF/VHF frequency range 40
BLF177 SOT121B 19 150 50 HF - VHF 2-TONE industrial and military applications in the HF/VHF frequency range 70
BLF202 SOT409A 13 2 12 175 - 230 2-TONE HF/VHF range range transmitters with a nominal supply voltage of 12.5 V 55
BLF242 SOT123A 16 5 28 175 - 230 2-TONE Transmitter applications in the HF/VHF frequency range 60
BLF244 SOT123A 17 15 28 175 - 230 Large signal amplifier applications in the VHF frequency range 65
BLF245 SOT123A 15.5 30 28 175 - 230 Large signal amplifier applications in the VHF frequency range 67
BLF245B SOT279A 18 30 28 175 - 230 Vertical D-MOS transistor designed for large signal amplifier applications 65
BLF246 SOT121B 16 80 28 108 Large signal amplifier applications in the VHF frequency range 55
BLF246B SOT161A 19 60 28 175 - 230 Large signal applications in the VHF frequency range 65
BLF248 SOT262A1 11.5 300 28 175 - 230 Vertical D-MOS transistor designed for large signal amplifier applications 65
BLF278 SOT262A1 22 300 50 175 - 230 Broadcast transmitters in the VHF frequency range 70
BLF346 SOT119A 14 24 28 175 - 230 Linear amplifier applications in television transmitters and transposers
BLF368 SOT262A1 13.5 300 32 175 - 230 Vertical D-MOS transistor designed for broadcast transmitter applications 62
BLF404 SOT409A 15 4 12 500 CW; 1-TONE Communication transmitters in the VHF/UHF range 55
BLF521 SOT172D 13 2 12 500 1-TONE; CW Transmitter applications in the UHF frequency range 60
BLF542 SOT171A 16.5 5 28 500 1-TONE; CW Large signal amplifier applications in the UHF frequency range 59
BLF544 SOT171A 7 20 28 500 1-TONE Communication transmitters in the UHF frequency range 50
BLF546 SOT268A 13 80 28 0 - 500 1-TONE Vertical D-MOS transistor designed for communications transmitter applications 60
BLF548 SOT262A2 11 150 28 0 - 500 1-TONE Communications transmitters in the UHF range 55
BLW96 SOT121B 6.5 200 50 1.6 - 28 s.s.b. applications 67

Aerospace & Defense (LDMOS) Selection Guide

Part Number Package frange (MHz) PL (W) ηD (%) Gp (dB) VDS (V) product application description
BLA0912-250 SOT502A 960 - 1,215 250 50 13 36 Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range
BLA0912-250R SOT502A 960 - 1,215 250 50 13.5 36 Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range
BLA1011-10 SOT467C 1,030 - 1,090 10 40 16 36 Avionics transmitter applications in the 1030 to 1090 MHz frequency range
BLA1011-2 SOT538A 1,030 - 1,090 10 40 16 36 Avionics applications in the 1030 to 1090 MHz frequency range
BLA1011-200 SOT502A 1,030 - 1,090 200 45 13 36 Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range
BLA1011-200R SOT502A 1,030 - 1,090 200 45 13 36 Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range
BLA1011-300 SOT957A 1,030 - 1,090 300 57 16.5 32 RF power amplifiers for Avionics applications
BLA1011S-200 SOT502B 1,030 - 1,090 200 45 13 36 Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range
BLA1011S-200R SOT502B 1,030 - 1,090 200 45 13 36 Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range
BLA6G1011-200R SOT502A 1030 - 1090 200 65 20 28 Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range
BLA6H0912-500 SOT539A 960 - 1215 500 50 17 50 L-band power amplifiers for radar applications
BLA6H1011-600 SOT539A 1030 - 1090 600 52 19 50 TCAS and IFF applications in the 1030 MHz to 1090 MHz frequency range
BLL1214-250 SOT502A 1,200 - 1,400 250 42 12 36 L-band radar applications in the 1200 to 1400 MHz frequency range
BLL1214-250R SOT502A 1200 - 1400 250 42 12 36 L-band radar applications in the 1200 to 1400 MHz frequency range
BLL1214-35 SOT467C 1,200 - 1,400 35 43 13 36 L-band radar applications in the 1200 to 1400 MHz frequency range
BLL6H0514-25 SOT467C 500 - 1400 25 58 21 50 L-band power amplifiers for radar applications in the 0.5 GHz to 1.4 GHz frequency range
BLL6H0514L-130 SOT1135A 500 - 1,400 130 50 17 50 Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
BLL6H0514LS-130 SOT1135B 500 - 1,400 130 50 17 50 Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
BLL6H1214-500 SOT539A 1,200 - 1,400 500 50 17 50 Radar applications in the 1.2 GHz to 1.4 GHz range
BLL6H1214L-250 SOT502A 1,200 - 1,400 250 55 17 50 L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range
BLL6H1214LS-250 SOT502B 1,200 - 1,400 250 55 17 50 L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range
BLS2933-100 SOT502A 2,900 - 3,300 100 40 8 32 S-band radar applications
BLS6G2731-120 SOT502A 2,700 - 3,100 120 48 13.5 32 Radar applications in the 3.1 GHz to 3.5 GHz frequency range
BLS6G2731-6G SOT975C 2,700 - 3,100 6 33 15 32 Radar applications in the 3.1 GHz to 3.5 GHz frequency range
BLS6G2731S-120 SOT502B 2,700 - 3,100 120 48 13.5 32 Radar applications in the 3.1 GHz to 3.5 GHz frequency range
BLS6G2731S-130 SOT922-1 2,700 - 3,100 130 47 12.5 32 S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range
BLS6G2933S-130 SOT922-1 2,900 - 3,300 130 47 12.5 32 radar applications in the 2.9 GHz to 3.3 GHz frequency range
BLS6G3135-120 SOT502A 3,100 - 3,500 120 43 11 32 Radar applications in the 3.1 GHz to 3.5 GHz frequency range
BLS6G3135-20 SOT608A 3,100 - 3,500 20 45 15.5 32 S-Band power amplifiers for radar applications
BLS6G3135S-120 SOT502B 3,100 - 3,500 120 43 11 32 Radar applications in the 3.1 GHz to 3.5 GHz frequency range
BLS6G3135S-20 SOT608B 3,100 - 3,500 20 45 15.5 32 S-Band power amplifiers for radar applications

Aerospace & Defense (Bipolar)

Part Number Package frange (MHz) PL (W) ηC (%) product application description Gp (dB) VDS (V)
MX0912B251Y SOT439A 960 - 1,215 275 47 Common base class-C broadband pulse power amplifiers 7.4 50
MX0912B351Y SOT439A 960 - 1,215 375 47 Common base class-C broadband pulse power amplifiers 7.6 50
MZ0912B100Y SOT443A 960 - 1,215 115 44 Common base class-C broadband pulse power amplifiers 7.6 50
MZ0912B50Y SOT443A 960 - 1,215 50 52 Common base class-C broadband pulse power amplifiers 8 50


RF Microwave Transistor

NXP Semiconductors offer BFU7xxF Microwave Transistors with low noise, high linearity in a plastic, 4-pin dual-emitter SOT343F package. BFU710F Microwave Transistors feature a high maximum power gain of 14 dB at 12 GHz and noise figure = 1.45 dB at 12 GHz. BFU760F Microwave Transistors feature high maximum output third order intercept point 32 dBm at 1.8 GHz. BFU790F Microwave Transistors feature high maximum output power at 1 dB compression 20 dBm at 1.8 GHz. Applications for NXP Semiconductors BFU7xxF Microwave Transistors include high linearity applications, medium output power applications, GPS, Zigbee and Bluetooth.

Part Number Description Maximum
Power
 Gain (dB) 		Power
Dissipation
 (mW) 		Transition
Frequency
 (GHz) 		Package
Datasheet
BFU690,115
NPN Wideband Silicon
Germanium RF Transistor
20.523018SOT343F

BFU710F,115 NPN Wideband Silicon
Germanium RF Transistor 		14 136
43 SOT343F
BFU725F/N1,115
NPN Wideband Silicon
Germanium RF Transistor
1813655SOT343F
BFU730F,115
NPN Wideband Silicon
Germanium RF Transistor
12.519755SOT343F
BFU760F,115 NPN Wideband Silicon
Germanium RF Transistor 		22 220
45 SOT343F
BFU790F,115 NPN Wideband Silicon
Germanium RF Transistor 		19.5
 234
25
 SOT343F
 Description

OM7692/BFU690F,598
2.33 GHz LNA Evaluation Board (EVB) designed to evaluate
the performance of the BFU690 transistor
OM7623/BFU725F/150
1.5 GHz Evaluation Board (EVB) simplifies the evaluation of
the BFU725F/N1 wideband transistor in the 1.5 GHz frequency range

OM7623/BFU725F/240
2.4 GHz Evaluation Board (EVB) simplifies the evaluation of
the BFU725F/N1 wideband transistor in the 2.4 GHz frequency range

OM7690/BFU730F,598
2.3-2.7 GHz LNA Evaluation Board simplifies the evaluation of
the BFU wideband transistor in the 2.3-2.7 GHz frequency range

OM7693/BFU730F,598
Ku Band LNA Evaluation Board (EVB) designed to evaluate
the performance of the BFU730F transistor in this frequency range

OM7691/BFU730F,598
5.0-6.0 GHz LNA Evaluation Board designed to evaluate
the performance of the BFU730F transistor in this frequency range
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