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Home » NEWEST Products » New by Manufacturer » Microchip Technology » SST12LFxx 2.4GHz Front-End Module - Microchip
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Microchip SST12LFxx 2.4GHz Front-End Module

Microchip SST12LFxx 2.4GHz Front-End Modules

Microchip's SST12LFxx 2.4GHz RF Front-End Modules are RF-matched power ampliers, low noise ampliers, and switch integrated offered in compact packages. These devices offer low external pin counts and are pin-to-pin compatible with popular front-end modules in the market. The SST12LFxx offers a high linear-transmission power and supports IEEE 802.11b/g/n operation. These RF front-end modules support Wi-Fi® and Bluetooth Tx/Rx and enables simultaneous Wi-Fi and Bluetooth operation. Typical applications include WLAN (IEEE 802.11b/g/n), Bluetooth, home RF, cordless phones, and 2.4GHz ISM wireless equipment.

Microchip's SST12LF01 2.4GHz Front-End Module (FEM) combines a high-performance Low-Noise Amplifier (LNA) and a Power Amplifier (PA). Designed in compliance with IEEE 802.11 b/g/n applications and based on GaAs PHEMT/HBT technology, the SST12LF01 operates within the frequency range of 2.4- 2.55GHz at a very low DC-current consumption. The Transmitter chain has excellent linearity, typically <3% added EVM up to 19dBm output power, which is essential for 54Mbps 802.11g operation while meeting 802.11g spectrum mask at 23dBm.


Microchip SST12LF01 2.4GHz Front-End Module (FEM)
Buy Microchip SST12LF01 2.4GHz Front-End Module (FEM) View Product List
Features
  • Gain:
    • Typically 12dB gain across 2.4–2.5GHz for Receiver (RX) chain
    • Typically 29dB gain across 2.4–2.5GHz over temperature 0°C to +80°C for Transmitter (TX) chain
  • Low-Noise Figure
    • Typical 1.45dB across 2.4–2.55GHz
  • 50Ω Input/Output matched along RX chain
  • Rx IIP3
    • 1dbm across 2.4–2.55GHz
  • High linear output power:
    • >26.5dBm P1dB
    • Meets 802.11g OFDM ACPR requirement up to 23dBm
    • ~3% added EVM up to 19dBm for 54Mbps 802.11g signal
    • Meets 802.11b ACPR requirement up to 24dBm
  • High power-added efficiency/Low operating current for both 802.11g/b applications
    • ~22%/210mA @ POUT = 22dBm for 802.11g
    • ~26%/240mA @ POUT = 23.5dBm for 802.11b
  • Low idle current
    • ~70mA ICQ

  • Low shut-down current (Typical 2.5μA)
  • Built-in, Ultra-low IREF power-up/down control
    • IREF <4mA
  • High-speed power-up/down
    • Turn on/off time (10%- 90%) <100ns
    • Typical power-up/down delay with driver delay included <200ns
    • High temperature stability
      • ~1dB gain/power variation between 0°C to +85°C
    • Simple input/output matching
    • Single positive power supply
    • Packages available
      • 24-contact WQFN – 4mm x 4mm
    • All devices are RoHS compliant
    • Applications
      • WLAN
      • Bluetooth
      • Wireless Network
Block Diagram
Block Diagram

Microchip's SST12LF02 2.4GHz High-Gain, High-Efficiency Front-End Module (FEM) that combines a high-performance Power Amplifier (PA) and a switch. Designed in compliance with IEEE 802.11 b/g/n applications and based on GaAs PHEMT/HBT technology, the SST12LF02 operates within the frequency range of 2.4- 2.5GHz at a very low DC-current consumption. The Transmitter chain has excellent linearity, typically ~3% added EVM up to 18dBm output power, which is essential for 54Mbps 802.11g operation while meeting 802.11g spectrum mask at 21dBm.

Microchip SST12LF02 2.4GHz High-Gain, High-Efficiency Front-End Module (FEM)

Buy Microchip SST12LF02 2.4GHz High-Gain, High-Efficiency Front-End Module (FEM) View Product Detail
Features
  • High gain:
    • Typically 29dB gain across 2.4–2.5GHz over temperature 0°C to +85°C for Transmitter (TX) chain
  • High linear output power:
    • >24dBm P1dB
    • Single-tone measurement
    • Meets 802.11g OFDM ACPR requirement up to 21dBm
    • ~3% added EVM up to 18dBm for 54Mbps 802.11g signal
    • Meets 802.11b ACPR requirement up to 21dBm
  • High power-added efficiency/Low operating current for 802.11b/g/n applications
    • ~30%/160mA @ POUT = 22dBm for 802.11g
    • ~29%/165mA @ POUT = 22dBm for 802.11b
  • Low IREF power-up/down control
    • IREF <2mA
  • Low idle current
    • ~65mA ICQ
  • High-speed power-up/down
    • Turn on/off time (10%- 90%) <100ns
    • Typical power-up/down delay with driver delay included <200ns

  • Low shut-down current (~2μA)
  • Limited variation over temperature
    • ~1dB gain/power variation between 0°C to +85°C
  • Excellent on-chip power detection
  • >15dB dynamic range on-chip power detection
  • Input/output ports matched to 50 internally and DC decoupled
  • Packages available
    • 16-contact XQFN – 3mm x 3mm
  • All non-Pb (lead-free) devices are RoHS compliant
Applications
  • WLAN (IEEE 802.11b/g/n)
  • Home RF
  • Cordless phones
  • 2.4GHz ISM wireless equipment

Block Diagram
Block Diagram

Microchip's SST12LF03 2.4GHz High-Gain, High-Efficiency Front-End Module (FEM) for WLAN 802.11b/g/n and Bluetooth® systems. The SST12LF03 RF module includes a PA, a LNA, and an antenna switch, making it ideal for WLAN/BT embedded applications where small size and high performance are required. Designed in compliance with IEEE 802.11 b/g/n applications and based on GaAs PHEMT/HBT technology, the SST12LF03 operates within a frequency range of 2.4-2.5GHz with a very low DC-current consumption. The Transmitter chain has excellent linearity, typically 3% added EVM up to 19dBm output power for 54Mbps 802.11g operation, while meeting 802.11b spectrum mask at 22dBm. The receiver chain provides a low noise amplifier and has options for LNA bypass and simultaneous WLAN and Bluetooth operation.


Microchip SST12LF03 2.4GHz High-Gain, High-Efficiency Front-End Module (FEM)

Buy Microchip SST12LF03 2.4GHz High-Gain, High-Efficiency Front-End Module (FEM) View Product Detail
Features
  • Input/output ports are matched to 50Ω internally and DC decoupled
  • Packages available:
    • 16-contact UQFN - 3mm x 3mm x 0.55mm
  • All non-Pb (lead-free) devices are RoHS compliant
      Transmitter Chain
  • High gain:
    • Typically 28dB gain across 2.4-2.5GHz over temperature -20°C to +85°C for Transmitter
  • High linear output power:
    • Meets 802.11g OFDM ACPR requirement up to 21dBm
    • 3% added EVM up to 19dBm for 54Mbps 801.11g signal
    • Meets 802.11b ACPR requirement up to 22dBm
  • High power-added efficiency/Low operating current for 802.11b/g/n applications
    • ~25% @ POUT = 22dBm for 802.11b/g
  • Low IREF power-up/down control
    • IREF <2mA
  • Low quiescent current
    • ~55mA ICQ
  • High-speed power-up/down
    • Turn-on/off time (10%-90%) <100ns
    • Typical power-up/down delay with driver delay included <200ns
  • Low shut-down current (~2μA)
  • Limited variation over temperature
    • ~1dB power variation between -20°C to +85°C
    • ~2dB gain variation between -20°C to +85°C
  • Linear on-chip power detector
    • >20dB dynamic range, temperature-stable, on-chip power detection

Receiver Chain
  • LNA active gain:
    • Typically 10dB
  • Low-noise receiver with LNA active
    • 3.1dB noise figure
    • >5dB P1dB
  • Low loss LNA bypass mode with simultaneous BT
    • Typically 5.5dB
Bluetooth® Path
  • Low-loss path
    • Typically 3dB
  • Simultaneous BT/WLAN gain:
    • 8dB
  • Simultaneous BT/WLAN noise figure:
    • 3.1dB
Applications
  • WLAN (IEEE 802.11b/g/n)
  • Home RF
  • Cordless phones
  • 2.4GHz ISM wireless equipment Zigbee
Block Diagram
Block Diagram

Microchip's SST12LF09 2.4GHz High-Gain, High-Efficiency Front-End Module (FEM) designed in compliance with IEEE 802.11b/g/n applications. Based on GaAs pHEMT/HBT technology, it combines a high-performance Power Amplifier (PA), a low-noise amplifier (LNA) and an antenna Tx/Rx switch (SW). The input/output RF ports are single-ended and internally matched to 50Ω. There are two components to the FEM: the Transmitter (TX) chain and the Receiver (RX) chain. The TX chain includes a high-efficiency PA based on the InGaP/GaAs HBT technology. The transmitter is optimized for high linearity, 802.11n and 256 QAM operation–typically providing 15dBm with 1.75% dynamic EVM for 256 QAM, 40MHz operation and 17dBm at 3% for 802.11g, 54Mbps operation. SST12LF09 has an excellent transmitter on-chip, single-ended power detector that is stable over temperature and insensitive to output VSWR. The RX chain provides typically 13dB gain with 2.5dB noise figure. With the LNA bypassed, the receiver loss is typically 9dB. SST12LF09 also features a Bluetooth® path with typically 1.0dB loss.

Microchip SST12LF09 2.4GHz High-Gain, High-Efficiency Front-End Module (FEM)

Buy Microchip SST12LF09 2.4GHz High-Gain, High-Efficiency Front-End Module (FEM) View Product Detail
Features
  • Input/output ports internally matched to 50Ω and DC decoupled
  • Package available
    • 16-contact XQFN – 2.5mm x 2.5mm x 0.4mm
  • All non-Pb (lead-free) devices are RoHS compliant
Transmitter Chain
  • Gain:
    • Typically 24dB gain
  • Dynamic linear output power:
    • Meets 802.11g OFDM ACPR requirement up to 21dBm
    • 3% EVM up to 17dBm for 802.11g, 54Mbps
    • 1.75% dynamic EVM up to 15 dBm for 256 QAM, 40MHz bandwidth
  • Operating current for 802.11g/n applications
    • 170mA @ POUT = 17dBm for 802.11g
    • 130mA @ POUT = 15dBm for 802.11n
  • PA Control current, IPEN:<2mA
  • Idle current, ICQ:105mA
  • Low shut-down current: ~2μA
  • Power-up/down control
    • Turn on/off time (10%–90%) <400ns
  • Limited variation over temperature
    • ~1dB gain/power variation between -40°C to +85°C
  • Linear on-chip power detection
    • Load and temperature insensitive
    • >20dB dynamic range on-chip power detection

Receiver Chain
  • Gain: Typically 13dB gain
  • Noise figure: Typically 2.5dB
  • Receiver input P1dB: Typically -6dBm
  • LNA bypass loss: Typically 9dB
Bluetooth® Chain
  • Loss: 1.0dB
  • Output P1dB: >25dBm
Applications
  • WLAN (IEEE 802.11b/g/n)
  • Home RF
  • Cordless phones
  • 2.4GHz ISM wireless equipment

Block Diagram
Block Diagram
  • Microchip Technology
  • Wireless
  • Semiconductors|Integrated Circuits|IC-RF