MACOM MAGX GaN HEMT RF Power Transistors
MACOM's MAGX GaN HEMT RF Power Transistors offer a gold metalized Gallium Nitride (GaN) on Silicon Carbide RF Power transistor suitable for a variety of RF power amplifier applications. These devices use a state of the art wafer fabrication process that provide high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for today's demanding application needs. Features include GaN depletion mode HEMT microwave transistor, common source configuration, broadband class AB operation, thermally enhanced Cu/Mo/Cu package, +50V typical operation and MTTF of 114 years. Typical applications can include WCDMA, LTE and WiMAX commercial wireless infrastructure, public radio, industrial, scientific and medical, SATCOM, instrumentation, DTV and avionics.