IXYS HiPerFET™ Power MOSFETsThese high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are designed for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Features
- IXYS advanced low gate charge process
- International standard packages
- Low gate charge and capacitance
- Low RDS (on)
- Unclamped Inductive Switching (UIS) rated
- Molding epoxies meet UL94V-0 flammability classification
Q3-Class Additional Features
- Avalanche rated
- Low Intrinsic gate resistance
- Low package inductance
- Fast intrinsic rectifier
- Low RDS(on) and Qg
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