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Home » NEWEST Products » New by Manufacturer » IXYS » IXYS HiPerFET™ Power MOSFETs / Mouser
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IXYS HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs

These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are designed for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Features
  • IXYS advanced low gate charge process
  • International standard packages
  • Low gate charge and capacitance
  • Low RDS (on)
  • Unclamped Inductive Switching (UIS) rated
  • Molding epoxies meet UL94V-0 flammability classification
Q3-Class Additional Features
  • Avalanche rated
  • Low Intrinsic gate resistance
  • Low package inductance
  • Fast intrinsic rectifier
  • Low RDS(on) and Qg
  • IXYS
  • Semiconductors|Transistors (FETs, Bipolars & IGBTs)