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Home » NEWEST Products » New by Manufacturer » Infineon Technologies » Infineon High Speed Trench & Fieldstop IGBTs
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Infineon High Speed Trench & Fieldstop IGBTs

Infineon High Speed Trench & Fieldstop IGBTs

Infineon High Speed Trench & Fieldstop IGBTs use TrenchStop™ and Fieldstop technology to provide superb switching performance, very low VCEsat, and low EMI. Infineon High Speed Trench & Fieldstop IGBTs are ideal for uninterruptible power supplies applications. The IGW25N120H3 IGBT is recommended in combination with SiC Diode IDH15S120 and is also used for solar inverter applications. The IKW15N120H3, IKW30N60H3, and IKW20N60H3 IGBTs are each part of a high speed DuoPack and come with a very soft, fast recovery anti-parallel diode.

Features:

TrenchStop™ technology offering:

  • Best in class switching performance: less than 500μJ total switching losses achievable
  • Maximum junction temperature: 175°C
  • Package type: PG-TO247-3
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
Applications:
  • Uninterruptible power supplies
  • Welding converters
  • Converters with high switching frequency

Part Numbers Datasheet VCE IC VCEsat, Tvj=25⁰C
IGW25N120H3
1200V 25A 2.05V
IGW40N60H3 600V 40A 1.95V
IKW15N120H3 1200V 15A 2.05V
IKW30N60H3 600V 30A 1.95V
IGW15N120H3 1200V 15A 2.05V
IKW20N60H3 600V 20A 1.95V

Infineon High Speed Trench & Fieldstop IGBTs Package Diagram

Infineon High Speed Trench & Fieldstop IGBTs Package Diagram
  • Infineon Technologies
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)