Everspin Technologies 256Kb Parallel MRAM
Everspin Technologies MR256A08B / MR256D08B are 262,144-bit magnetoresistive random access memory (MRAM) devices organized as 32,768 words of 8 bits. The MR256A08B / MR256D08B are the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
Data is always non-volatile for greater than 20-years and is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
MR256A08B Features
Datasheet
Block Diagram
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32K x 8 MRAM
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3.3 Volt power supply
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Fast 35 ns read/write cycle
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Unlimited read & write endurance
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SRAM compatible timing
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Native non-volatility
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Data always non-volatile for >20-years at temperature
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Packages compatible with similar low-power SRAM and other non-volatile RAM products:
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TSOP2 - small footprint 400-mil, 33-lead plastic small-outline
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BGA - 48-pin
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SOIC packages - 32-lead
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Temp ranges:
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-40 to +85
º
C industrial
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MR256D08B Features
Datasheet
Block Diagram
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Dual Supply 32K x 8 MRAM
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+3.3 Volt power supply
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I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces
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Fast 45 ns read/write cycle
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SRAM compatible timing
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Unlimited read & write endurance
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Data always non-volatile for >20-years at temperature
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BGA package - 48-pin, 8mmx8mm with 0.75mm ball centers
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0 to +70ºC commerical temperature range
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MR256A08BF Block Diagram
MR256D08B Block Diagram
Everspin Technologies 1Mb Parallel MRAM
Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, organized as 131,072 words of 8 bits or 65,536 words of 16 bits, and as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance.
MR0A08B Features
Datasheet
Block Diagram
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Dual supply organized as 131,072 words of 8 bits
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Fast 35ns Read/Write cycle
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SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
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Unlimited Read & Write Endurance
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Data Always Non-volatile for >20-years at Temperature
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One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design
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Replace battery-backed SRAM solutions with MRAM to eliminate battery assembly improving reliability
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3.3 Volt Power Supply
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Automatic Data Protection on Power Loss
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MR0D08B Features
Datasheet
Block Diagram
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Dual supply organized as 131,072 words of 8 bits
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Fast 45ns Read/Write timing with unlimited endurance
-
SRAM compatible timing
-
Data always non-volatile for >20-years at temperature
-
One memory replaces Flash, SRAM, EEPROM, and BBSRAM in system for simpler, more efficient design
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+3.3 Volt power supply
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I/O voltage range supports wide +1.65 to +2.6 Volt interfaces
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Improves reliability by replacing battery-backed SRAM
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MR0A16A Features
Datasheet
Block Diagram
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Fast 35ns Read/Write Cycle
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Organized as 65,536 words of 16 bits
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SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign
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Unlimited Read & Write Endurance
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Data Always Non-volatile for >20-years at Temperature
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One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System
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for Simpler, More Efficient Design
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Replace battery-backed SRAM solutions with MRAM to eliminate battery assembly, reliability, and liability issues
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3.3 Volt Power Supply
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Automatic Data Protection on Power Loss
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Part Number
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Package Style
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MR0A08BCYS35
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44-TSOP
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MR0A08BSO35
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32-SOIC
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MR0A08BMA35
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48-BGA
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MR0A08BCMA35
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48-BGA
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| MR0A08BYS35 | 44-TSOP |
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MR0A08BYS35R
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44-TSOP, T&R
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MR0A08BCYS35R
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44-TSOP, T&R
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MR0A08BSO35R
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32-SOIC, T&R
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MR0A08BMA35R
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48-BGA, T&R
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MR0A08BCMA35R
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48-BGA, T&R
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| MR0D08BMA45 | 48-BGA |
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MR0D08BMA45R
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48-BGA, T&R
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MR0A16ACYS35
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44-TSOP
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MR0A16AYS35
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44-TSOP
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MR0A16AMA35
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48-BGA
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MR0A16ACMA35
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48-BGA
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MR0A16AVYS35
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44-TSOP
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MR0A16AVMA35
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48-BGA
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MR0A16AYS35R
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44-TSOP
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MR0A16ACYS35R
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44-TSOP, T&R
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MR0A16AVYS35R
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44-TSOP, T&R
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MR0A16AMA35R
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48-BGA, T&R
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MR0A16ACMA35R
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48-BGA, T&R
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MR0A16AVMA35R
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48-BGA, T&R
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MR0A08B Block Diagram
MR0D08B Block Diagram
MR0A16A Block Diagram
Everspin Technologies 4Mb Parallel MRAM
Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The Everspin MR2A16A is a 4,194,304-bit MRAM device organized as 262,144 words of 16 bits. Data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR2A08A and MR2A16A are the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR2A08A and MR2A16A are available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package or 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are compatible with similar low-power SRAM products and other non-volatile RAM products. The MR2A08A and MR2A16A provide highly reliable data storage over a wide range of temperatures. These products are offered with commercial temperature (0 to +70 °C), industrial temperature (-40 to +85 °C), and extended temperature (-40 to +105 °C) range options.
Features
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512K x 8 MRAM Memory (MR2A08A)
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256K x 16 MRAM Memory (MR2A16A)
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Fast 35ns Read/Write Cycle
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SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
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Unlimited Read & Write Endurance
-
Data Always Non-volatile for >20-years at Temperature
-
One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design
-
Replace battery-backed SRAM solutions with MRAM to eliminate battery assembly, improving reliability
-
3.3 Volt Power Supply
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Automatic Data Protection on Power Loss
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Commercial, Industrial, Automotive Temperatures
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RoHS-Compliant SRAM TSOPII Package
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RoHS-Compliant SRAM BGA Package Shrinks Board Area By Three Times
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Part Number
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Package Style
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MR2A08AMA35
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48-BGA
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MR2A08ACMA35
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48-BGA
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MR2A08AYS35
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44-TSOP
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MR2A08ACYS35
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44-TSOP
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MR2A08AMYS35
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44-TSOP
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MR2A08AYS35R
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44-TSOP, T&R
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MR2A08ACYS35R
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44-TSOP, T&R
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MR2A08AMYS35R
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44-TSOP, T&R
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MR2A08AMA35R
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48-BGA, T&R
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MR2A08ACMA35R
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48-BGA, T&R
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MR2A16AMA35
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48-BGA
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MR2A16ACMA35
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48-BGA
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MR2A16AYS35
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44-TSOP
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MR2A16ACYS35
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44-TSOP
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MR2A16AVYS35
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44-TSOP
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MR2A16AVMA35
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48-BGA
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MR2A16AYS35R
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44-TSOP, T&R
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MR2A16ACYS35R
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44-TSOP, T&R
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MR2A16AVYS35R
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44-TSOP, T&R
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MR2A16AMA35R
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48-BGA, T&R
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MR2A16ACMA35R
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48-BGA, T&R
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MR2A16AVMA35R
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48-BGA, T&R
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MR2A08A Block Diagram
MR2A16A Block Diagram
Everspin Technologies 16Mb Parallel MRAM
Everspin Technologies MR4A08B and
MR4A16B
16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The Everspin Technologies MR4A16B is organized as 1,048,576 words of 16 bits. For both MRAM devices, data is non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package or 10 mm x 10 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. The MR4A16B is available in small footprint 48-pin ball grid array (BGA) package and a 54-pin thin small outline package (TSOPII). Both products provide highly reliable data storage over a wide range of temperatures. They are offered with commercial temperature (0 to +70 °C), industrial temperature (-40 to +85 °C), and automotive temperature (-40 to +125 °C) range options.
Features
-
+3.3 Volt power supply
-
Fast 35 ns read/write cycle
-
SRAM compatible timing
-
Unlimited read & write endurance
-
Data always non-volatile for >20 years at temperature
-
RoHS-compliant small footprint BGA and TSOP package
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Benefits
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One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
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Improves reliability by replacing battery-backed SRAM
|
MR4A16B Block Diagram
MR4A08B Block Diagram
Everspin Technologies SPI Serial MRAM
The Everspin Technologies MR25H256 / MR25H10 / MR25H40 SPI Serial MRAM devices offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. They are an ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins. The Serial MRAM devices are available in either a 5 mm x 6 mm 8-pin DFN package or a 5 mm x 6 mm 8-pin DFN Small Flag package. Both are compatible with serial EEPROM, Flash, and FeRAM products.The MR25H40 provides highly reliable data storage over a wide range of temperatures. The product is offered with industrial (-40° to +85 °C) and AEC-Q100 Grade 1 (-40°C to +125 °C) operating temperature range options.
MR25H40 Features
Datasheet
Block Diagram
- 4,194,304-bit magnetoresistive (MRAM) device organized as 524,288 words of 8 bits
- No write delays
- Unlimited write endurance
- Data retention greater than 20 years
- Automatic data protection on power loss
- Fast, simple SPI interface with up to 40 MHz clock rate
- 3.0 to 3.6 Volt power supply range
- Low current sleep mode
- Industrial temperatures
- Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packages
- Direct replacement for serial EEPROM, Flash, FeRAM
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MR25H10 Features
Datasheet
Block Diagram
- 1,048,576-bit magnetoresistive (MRAM) device organized as 131,072 words of 8 bits
- Serial SPI MRAM
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Organized as 131,072 words of 8 bits
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Serial EEPROM and serial Flash compatible read/write timing
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No write delays
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Unlimited write endurance
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Data retention greater than 20 years
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Automatic data protection on power loss
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Fast, simple SPI interface with up to 40 MHz clock rate
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2.7 to 3.6V power supply range
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3μA sleep mode standby current
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Industrial, automotive temperatures
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Small footprint 8-pin DFN RoHS-compliant package
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Direct replacement for serial EEPROM, Flash, FeRAM
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MR25H256 Features
Datasheet
Block Diagram
- 262,144-bit magnetoresistive MRAM organized as 32,7568 words of 8-bits
- No write delays
- Unlimited write endurance
- Data retention greater than 20 years
- Automatic data protection on power loss
- Block write protection
- Fast, simple SPI interface with up to 40 MHz clock rate
- 2.7 to 3.6 Volt power supply range
- Low current sleep mode
- Industrial temperatures
- Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packages
- Direct replacement for serial EEPROM, Flash, FeRAM
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MR25H40 Block Diagram
MR25H256 Block Diagram
MR25H10 Block Diagram
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