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Cree GaN HEMT based MMICs

Cree GaN HEMT based MMICs

Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.


Applications
  • Radar
  • Broadband Amplifiers
  • Satcom & Point-to-Point Radio
  • Data Link & Tactical Data Link
  • Jamming Amplifiers
  • Test Equipment Amplifiers
  • Marine Radar
Part NumberOperating FrequencyP1dBMaximum Power DissipationOutput Intercept PointSupply CurrentTest FrequencyMounting StyleData Sheet









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