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Home » NEWEST Products » New by Manufacturer » Cree » GaN HEMTs - Cree
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Cree GaN HEMTs

Cree GaN HEMTs

Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Applications
  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
  • Satellite Communications
  • PTP Communications Links
  • Marine Radar
  • Pleasure Craft Radar
  • Port Vessel Traffic Services
  • High Efficiency Amplifiers

Part NumberData SheetFrequencyGainOutput PowerVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentVgs th - Gate-Source Threshold Voltage








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Cree CGHV96100F2 GaN HEMT

Cree CGHV96100F2 GaN HEMT on Silicon Carbide (SiC) substrates is an Internally Matched (IM) FET that offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

Features
  • 8.4-9.6GHz Operation
  • 145W POUT typical
  • 10dB Power Gain
  • 45% Typical PAE
  • 50Ohm Internally Matched
  • <0.3dB Power Droop
Applications
  • Marine Radar
  • Weather Monitoring
  • Air Traffic Control
  • Maritime Vessel Traffic Control
  • Port Security

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