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Home » NEWEST Products » New by Manufacturer » Cree » Cree Z-FET™ SiC Power MOSFETs
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Cree Z-FET™ 1200V Silicon Carbide Power MOSFETs

Cree C2M Family Silicon Carbide Power MOSFETs

Cree C2M family Silicon Carbide Power MOSFETs provide engineers a wide range of 1200V and 1700V SiC MOSFETs. Cree SiC MOSFETs enable engineers to replace silicon transistors (IGBTs) and develop high-voltage circuits with extremely fast switching speeds and ultra-low switching losses. Used in conjunction with Cree's Z-Rec® SiC Schottky diodes in an all-SiC system, the Cree Z-FET SiC MOSFET allows design engineers to achieve levels of energy efficiency, size, and weight reduction that are not possible with available silicon power devices of comparable ratings. The new C2M family of MOSFETs is based on Cree's rugged and reliable Gen2 SiC technology platform providing the lowest switching losses in their class; significantly higher switching frequencies, all at lower cost. This revolutionary series also reduces the size of magnetics and filter components and significantly reduces cooling requirements.


Features
  • High blocking voltage with industry-leading RDS(on)
  • High-speed switching with low capacitances
  • Easy to parallel and simple to drive
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased system switching frequency
  • Avalanche ruggedness
  • Resistant to latch-up
  • Pb-free plating
  • RoHS and REACH compliant
  • Halogen-free

Applications
  • Solar inverters
  • High voltage DC/DC converters
  • Motor drives
  • Switch Mode Power Supplies
  • UPS

Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet








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