|    Change Country Change Location USD
United States United States

Please confirm your currency selection:

US Dollars
Home » NEWEST Products » New by Manufacturer » Cree » Cree CAS100H12AM1 1200V High-Frequency Silicon Carbide Half-bridge Module
NEWEST Products
Cree CGD15FB45P 6-Channel SiC MOSFET Driver

Cree CAS100H12AM1 1200V High-Frequency
Silicon Carbide Half-bridge Module

Cree CAS100H12AM1 1200V High-Frequency Silicon Carbide Half-bridge Module is the first commercially available all silicon carbide (SiC) Cree power module. It is also the first fully-qualified module with both SiC MOSFETs and SiC Schottky diodes combined in a single half-bridge package. This new dual module features ultra low loss and high ruggedness for high-frequency operation. The CAS100H12AM1 has demonstrated up to 100kHz operation and provides 100A current handling at 1200V blocking. Higher frequency operation enables compact and lightweight systems and less expensive inductors and capacitors in the system. The CAS100H12AM1 is ideal for industrial applications including high power converters, motor drives, solar inverters, UPS and SMPS, and induction heating.

Features and Benefits
  • Ultra low loss
  • High ruggedness
  • High-frequency operation
  • Zero reverse recovery current from diode
  • Zero turn-off tail current from MOSFET
  • Positive temperature coefficient on VF and VDS(on)
  • Enables compact and lightweight systems
  • High efficiency operation
  • Mitigate over-voltage protection
  • Ease of transistor gate control
  • Reduces thermal requirements
  • High power converters
  • Motor drives
  • Solar inverters
  • UPS and SMPS
  • Induction heating
Circuit Diagram
Circuit Diagram
Mouser.com Comments

Mouser welcomes lively and courteous interaction on our website. In order to host a cooperative discussion, please keep comments relevant to the topics on this page. All comments are reviewed prior to being posted to ensure appropriate language and content is used.

  • Cree
  • Industrial
  • Optoelectronics|Semiconductors|Discrete Semiconductors