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Home » NEWEST Products » New by Manufacturer » CEL » CEL NESG7030M04 NPN Silicon Germanium Carbon RF Transistor
NEWEST Products

CEL NESG7030M04 NPN Silicon
Germanium Carbon RF Transistor

CEL NESG7030M04 NPN Silicon Germanium Carbon RF Transistor has been developed for 802.11ac Wi-Fi applications​. This new WLAN/Wi-Fi (802.11ac) standard has increased the interest of Chipset customers for a 5-6GHZ LNA device. This device is ideal for low noise, high gain application. Typical applications include electronic toll collection, satellite radio and general short range wireless communication.

Features
  • The device is an ideal choice for low noise, high gain amplification.
  • NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
  • Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
  • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz
  • Maximum stable power gain: MSG =16.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 5.8 GHz

  • SiGe: C HBT technology
  • This product is improvement of ESD.
  • Flat-lead 4-pin thin-type super minimold (M04 PKG)
Applications
  • Electronic Toll Collection (ETC)
  • Satellite Radio
  • General Short Range Wireless Communication
Evaluation Boards
Part Number Description
NESG7030M04-EVDB-A Evaluation board for NESG7030M04 (Dual Band (2.4 & 5.8GHz))
NESG7030M04-EV58-A Evaluation board for NESG7030M04 (5.8GHz)
NESG7030M04-EV24-A Evaluation board for NESG7030M04 (2.4GHz)
  • CEL
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)