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Home » NEWEST Products » New by Manufacturer » CEL » CEL NESG7030M04 NPN Silicon Germanium Carbon RF Transistor - INACTIVE
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CEL NESG7030M04 NPN Silicon
Germanium Carbon RF Transistor

CEL NESG7030M04 NPN Silicon Germanium Carbon RF Transistor has been developed for 802.11ac Wi-Fi applications​. This new WLAN/Wi-Fi (802.11ac) standard has increased the interest of Chipset customers for a 5-6GHZ LNA device. This device is ideal for low noise, high gain application. Typical applications include electronic toll collection, satellite radio and general short range wireless communication.

Features
  • The device is an ideal choice for low noise, high gain amplification.
  • NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
  • Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
  • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz
  • Maximum stable power gain: MSG =16.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 5.8 GHz

  • SiGe: C HBT technology
  • This product is improvement of ESD.
  • Flat-lead 4-pin thin-type super minimold (M04 PKG)
Applications
  • Electronic Toll Collection (ETC)
  • Satellite Radio
  • General Short Range Wireless Communication
Evaluation Boards
Part Number Description
NESG7030M04-EVDB-A Evaluation board for NESG7030M04 (Dual Band (2.4 & 5.8GHz))
NESG7030M04-EV58-A Evaluation board for NESG7030M04 (5.8GHz)
NESG7030M04-EV24-A Evaluation board for NESG7030M04 (2.4GHz)
  • CEL
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)