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Home » NEWEST Products » New by Manufacturer » Toshiba » SiC Schottky Barrier Diodes - Toshiba
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Toshiba SiC Schottky Barrier Diode

Toshiba SiC Schottky Barrier Diode

Toshiba SiC Schottky Barrier Diode are fabricated using silicon carbide (SiC), a wide-bandgap semiconductor, to provide high breakdown voltage that has never been possible with silicon (Si) SBDs. Being unipolar devices, SiC SBDs have very short reverse recovery time and temperature-independent switching behavior, making them the ideal replacements for Si fast-recovery diodes (FRDs) to improve power supply efficiency.

  • Power factor correction circuits
  • Photovoltaic inverters
  • Uninterruptible power supplies
Toshiba SiC Schottky Barrier Diode Forward Voltage Comparision

Toshiba SiC SBD graph
Part Number Package / Case Peak Reverse Voltage Forward Voltage Drop Forward Continuous Current Maximum Reverse Leakage Current Maximum Diode Capacitance Data Sheet

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