Toshiba SiC Schottky Barrier Diode
Toshiba SiC Schottky Barrier Diode are fabricated using silicon carbide (SiC), a wide-bandgap semiconductor, to provide high breakdown voltage that has never been possible with silicon (Si) SBDs. Being unipolar devices, SiC SBDs have very short reverse recovery time and temperature-independent switching behavior, making them the ideal replacements for Si fast-recovery diodes (FRDs) to improve power supply efficiency.
- Power factor correction circuits
- Photovoltaic inverters
- Uninterruptible power supplies