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Toshiba

Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications.Visit the Toshiba page
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 U-MOSVIII-H Power MOSFETs U-MOSVIII-H Power MOSFETs
09/24/2014 -
Provides high-speed switching & low drain-source on-resistance for high-efficiency power supplies.
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 Toshiba TLP293 Single Channel Photocoupler Toshiba TLP293 Single Channel Photocoupler
09/05/2014 -
Toshiba's TLP293 Single Channel Photocoupler consists of a low input type phototransistor optically coupled to an InGaAs infrared emitting diode. The TLP293 is housed in the SO4 package, making a very small and thin coupler. The TLP293 has a  guaranteed wide operating temperature (Ta=-55 to 125˚C) and high isolation voltage (3750Vrms). This makes this device suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers.
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 TCK20xG Load Switches TCK20xG Load Switches
09/03/2014 -
Ultra low voltage load switch ICs for power management in high-density board designs.
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 TCR3DM Series CMOS LDO Voltage Regulators TCR3DM Series CMOS LDO Voltage Regulators
07/18/2014 -
Features low dropout voltage, low output noise voltage and low inrush current.
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 TLP152/352 IGBT/MOSFET Gate Drive Photocouplers TLP152/352 IGBT/MOSFET Gate Drive Photocouplers
07/18/2014 -
GaAℓAs infrared light-emitting diode optically coupled to an integrated high-gain, high-speed photodetector IC chip.
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 TLP2309 1Mbps Photocoupler TLP2309 1Mbps Photocoupler
07/10/2014 -
High-output GaAℓAs light-emitting diode coupled with a high-speed photodiode-transistor chip.
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 High-Speed Low Power Photocouplers High-Speed Low Power Photocouplers
07/10/2014 -
High-output GaAℓAs light-emitting diode coupled with integrated high gain, high-speed photodetectors.
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 TLP5702 GaAlAs Photocoupler TLP5702 GaAlAs Photocoupler
07/10/2014 -
Consists of a GaAlAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photo detector IC.
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 TC75S57F Single Comparator TC75S57F Single Comparator
07/09/2014 -
Features push-pull output stage that can be directly connected to TTL or CMOS logic ICs, etc.
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 TC75S59F Single Comparator TC75S59F Single Comparator
06/20/2014 -
CMOS general-purpose single comparator with open drain output & low current consumption.
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 TCR3DF Series CMOS LDO Voltage Regulators TCR3DF Series CMOS LDO Voltage Regulators
06/20/2014 -
Features low dropout voltage, low output noise voltage and low inrush current.
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 TC35661SBG Bluetooth® Single-Chip Controllers TC35661SBG Bluetooth® Single-Chip Controllers
04/09/2014 -
Highly integrated RFCMOS Bluetooth devices support Bluetooth Classic (3.0+EDR) & BT LE (low energy) 4.0 standard.
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 TC32306FTG Single-Chip RF Transceiver for Low-Power Systems TC32306FTG Single-Chip RF Transceiver for Low-Power Systems
04/04/2014 -
Single-chip RF transceiver; suitable for a variety of RKE applications.
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 Toshiba TCK10xG Load Switch ICs Toshiba TCK10xG Load Switch ICs
11/27/2013 -
Featuring low-voltage operation, low on-resistance, low current consumption and a control input pin.
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 SiC Schottky Barrier Diode SiC Schottky Barrier Diode
11/26/2013 -
Featuring very short reverse recovery time and temperature-independent switching behavior, SiC SBDs are ideal replacements for Si fast-recovery diodes (FRDs) to improve power supply efficiency.
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 Toshiba SSM6J771G ultra-compact MOSFET Toshiba SSM6J771G ultra-compact MOSFET
11/25/2013 -
P-channel MOSFETs with high gate to source breakdown voltage, high drain to source breakdown voltage and a low drain to source on resistance.
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 DF6D7M1N / DF10G7M1N ESD Protection Diodes DF6D7M1N / DF10G7M1N ESD Protection Diodes
08/29/2013 -
Features an electrostatic discharge rating of ±8kV, a junction temperature of 150ºC, and a storage temperature range of -55 to 150ºC.
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 TC94BxxWBG Headphone Amplifiers TC94BxxWBG Headphone Amplifiers
06/26/2013 -
Class-G stereo headphone amps with electronic volume control.
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 TCR2EE/EN CMOS Low Drop-Out Regulators TCR2EE/EN CMOS Low Drop-Out Regulators
06/03/2013 -
Available in fixed output voltages from 1.0V to 3.6V and capable of driving up to 200mA.
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 TPN4R203NC U-MOS VIII MOSFET TPN4R203NC U-MOS VIII MOSFET
05/31/2013 -
Features low drain source on-resistance of 3.5mΩ (typ.) at 10V and low leakage current of 10µA (max) at 30V.
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 U-MOSVIII-H Low Voltage High Efficiency MOSFETs U-MOSVIII-H Low Voltage High Efficiency MOSFETs
05/01/2013 -
Designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays.
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 Gen-4 Super Junction 600V DTMOS MOSFETs Gen-4 Super Junction 600V DTMOS MOSFETs
03/27/2013 -
State-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on).
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 U-MOS VI Small Signal MOSFETs U-MOS VI Small Signal MOSFETs
03/22/2013 -
Supports high-current charging with low voltage and low RDS(on) requirements.
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 Low On-Resistance Power MOSFETs Low On-Resistance Power MOSFETs
02/28/2013 -
Designed for lithium-ion battery protection circuits and mobile phone power management switches.
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 SSM3K333R 30V N-Channel MOSFET SSM3K333R 30V N-Channel MOSFET
11/29/2012 -
Offers good radiation performance, and features low on-resistance (RDS(on)).
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