Contact Mouser (USA)  (800) 346-6873     |     Feedback        
View Cart     |     Change Location  USD
United States United States

Please confirm your currency selection:

US Dollars
Home » NEWEST Products » New by Manufacturer » Texas Instruments » NexFET™ Power MOSFETs - TI
NEWEST Products
Texas Instruments NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs

View Product List

Additional Resources

Texas Instruments NexFET™ power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. TI NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. TI NexFET™ power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.


MOSFET Comparison
Industry Standard NexFET Technology
Control FET
RDS(on) = 6.6mΩ RDS(on) = 5.8mΩ
QG = 12.3nC QG = 6.5nC
Sync FET
RDS(on) = 2.3mΩ RDS(on) = 2.5mΩ
QG = 39.8nC QG = 13.2nC



System Block Diagram of TI Electronics in a Power System Design

System Block Diagram of TI Electronics in a Power System Design

90% Efficiency from Light to Full Load
90% Efficiency from Light to Full Load

Same Power Loss, Double the Frequency

Same Power Loss, Double the Frequency
TI NexFET N-Channel Power MOSFETs

View Product List

Additional Resources

TI NexFET N-Channel power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These TI devices are avalanche rated and come in a SON 5mm x 6mm plastic package.


Features
  • Ultra Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceId - Continuous Drain CurrentData Sheet






Loading First Previous Next Last


Functional Diagram
Functional Diagram

TI NexFET P-Channel power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These TI NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.


Features
  • Ultra Low On Resistance
  • Ultra Low Qg and Qgd
  • Small Footprint 1.0mm x 1.5mm
  • Low Profile 0.62mm Height
  • Pb Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection - 3KV
  • RoHS Compliant
  • Halogen Free
Applications
  • Battery Management
  • Load Switch
  • Battery Protection

Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet







Loading First Previous Next Last

Functional Diagram
Functional Diagram
Texas Instruments DualCool™ NexFET Power MOSFETs

View Product List

Additional Resources

TI DualCool™ NexFET power MOSFETs deliver an industry standard footprint, while enabling thermally efficient cooling through the top and bottom of the package. This package allows power system designers to effectively direct heat away from the PCB in high-current DC/DC applications, resulting in improved power density, higher current capability, and improved system reliability.


Features
  • Enables top-side cooling
  • 80% higher power dissipation
  • 50% more current in standard footprint

Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet







Loading First Previous Next Last

Thermal Performance Comparison
Thermal Performance Comparison

CSD16321Q5C — Measured Thermal Improvements (Ta = 25°C, Pd = 2.1 Watts, Airflow = 300 LFM)
CSD16321Q5C — Measured Thermal Improvements (Ta = 25°C, Pd = 2.1 Watts, Airflow = 300 LFM)
TI NexFET Power Block Synchronous Buck MOSFETs

View Product List

View Associated Dev Tools

Additional Resources

TI NexFET Power Block Synchronous Buck MOSFETs provide maximum efficiency, frequency, and power density in half the size of discrete MOSFETs. TI's NexFET power block offerings include the CSD86330Q3D half-bridge device with 90% system efficiency at 15A and up to 20A operation. CSD86350Q5D devices are half the size of discrete MOSFETs and boast 2% higher efficiency.


CSD86330Q3D Features
  • Half-bridge Power Block
  • 90% system efficiency at 15A
  • Up to 20A operation
  • High-frequency operation (up to 1.5MHz)
CSD86350Q5D Features
  • Half the size of discrete MOSFETs
  • 2% higher efficiency
  • Simplifies layout
  • Energy efficient POL design

Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet







Loading First Previous Next Last

CSD86330Q3D Efficiency
CSD86330Q3D Efficiency

CSD86350Q5D Efficiency
CSD86350Q5D Efficiency
  • Texas Instruments