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Home » NEWEST Products » New by Manufacturer » Texas Instruments » NexFET Power MOSFETs - TI
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Texas Instruments NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs

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TI Reference Design
Generic Energy Harvesting Adapter Module for Thermoelectric Generators (TEG) Reference Design

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. Texas Instruments NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.


MOSFET Comparison
Industry Standard NexFET Technology
Control FET
RDS(on) = 6.6mΩ RDS(on) = 5.8mΩ
QG = 12.3nC QG = 6.5nC
Sync FET
RDS(on) = 2.3mΩ RDS(on) = 2.5mΩ
QG = 39.8nC QG = 13.2nC



System Block Diagram of Texas Instruments Electronics in a Power System Design
System Block Diagram of Texas Instruments Electronics in a Power System Design

90% Efficiency from Light to Full Load
90% Efficiency from Light to Full Load

Same Power Loss, Double the Frequency
Same Power Loss, Double the Frequency
Texas Instruments NexFET N-Channel Power MOSFETs

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Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.


Features
  • Ultra Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceId - Continuous Drain CurrentData Sheet






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Functional Diagram
Functional Diagram

Texas Instruments NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.


Features
  • Ultra Low On Resistance
  • Ultra Low Qg and Qgd
  • Small Footprint 1.0mm x 1.5mm
  • Low Profile 0.62mm Height
  • Pb Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection - 3KV
  • RoHS Compliant
  • Halogen Free
Applications
  • Battery Management
  • Load Switch
  • Battery Protection

Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet







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Functional Diagram
Functional Diagram
Texas Instruments DualCool™ NexFET Power MOSFETs

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Texas Instruments DualCool™ NexFET Power MOSFETs deliver an industry standard footprint, while enabling thermally efficient cooling through the top and bottom of the package. This package allows power system designers to effectively direct heat away from the PCB in high-current DC/DC applications, resulting in improved power density, higher current capability, and improved system reliability.


Features
  • Enables top-side cooling
  • 80% higher power dissipation
  • 50% more current in standard footprint

Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet







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Thermal Performance Comparison
Thermal Performance Comparison

CSD16321Q5C — Measured Thermal Improvements (Ta = 25°C, Pd = 2.1 Watts, Airflow = 300 LFM)
CSD16321Q5C — Measured Thermal Improvements (Ta = 25°C, Pd = 2.1 Watts, Airflow = 300 LFM)
Texas Instruments NexFET Power Block ICs

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Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs which improves power density. With ultra-low Qg & Qgd these devices enable a higher switching frequency with up to double frequency for same power loss versus competitor's devices. This provides improved transient response for less output capacitors that will be needed. There is a reduction in size, by up to 1/2, for the output filter (caps & inductor). They come with a unique ground pad lead frame and pinout which simplifies the customers layout and improves operating and thermal performance.

Features
  • Optimized Dual NexFET MOSFETs
  • 1/2 the PCB area vs discrete 3x3 QFN MOSFETs

  • Ultra Low Qg & Qgd
  • Unique ground pad lead frame and pinout
Texas Instruments NexFET Power Stage ICs

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Texas Instruments NexFET Power Stage ICs are optimized driver ICs with Dual NexFET MOSFETs used in the device. This delivers higher efficiency in a typical high current POL design. With ultra-low Qg & Qgd these devices enable a higher switching frequency with up to double frequency for same power loss versus competitor's devices. This provides improved transient response for less output capacitors that will be needed. There is a reduction in size by up to 1/2 for the output filter (caps & inductor). They come with a unique ground pad leadframe and pinout which simplifies the customers layout and improves operating and thermal performance. These are offered in smaller package versus typical discrete solutions which saves board space.


Features
  • Optimized Driver IC with Dual NexFET MOSFETs
  • Ultra Low Qg & Qgd
  • Unique ground pad leadframe and pinout

  • Smaller package vs discrete solutions
  • Diode emulation
  • Ultra Low Quiesent (ULQ) Current Mode
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