|    Change Country Change Location USD
 
United States United States

Please confirm your currency selection:

US Dollars
Home » NEWEST Products » New by Manufacturer » NXP Semiconductors » NXP High Performance RF
NEWEST Products

NXP High Performance RF

NXP enables designers to meet the specifications of the most demanding RF applications. With NXP RF products, you can design systems to the highest specifications while retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. Whether you're looking to improve RF performance, design a highly efficient signal chain, or break new ground with an innovative ISM application, NXP 's creative thinking and expert support can help you every step of the way.

A clear industry leader in high performance RF , NXP annually ships more than 4 billion products. These high-performance RF products play a critical role in a variety of applications - from satellite receivers, cellular base stations, and broadcast transmitters to ISM (Industrial, Scientific, and Medical), aerospace, and defense applications. Innovative Doherty power amplifier architectures, JESD204A serialized data interfaces, and minute GPS LNA s are among the constant innovations NXP places at your fingertips.

NXP High Performance RF Resources

NXP's RF power transistors for broadcast, ISM and defense and aerospace applications Video
NXP Varicap Diodes
Why choose NXP semiconductors' varicap diodes:
  • Direct matching process
  • Small tolerances
  • Complete portfolio covering broad frequency range and variety in package (including leadless)
Varicap Diodes Selection Guide
Part NumberPackage / CaseCapacitanceReverse VoltageMinimum Tuning RatioData Sheet






Loading First Previous Next Last
NXP PIN Diodes
Why choose NXP semiconductors' PIN diodes:
  • Broad portfolio
  • Unrivalled performance
  • Low series inductance
  • Low insertion loss
  • Low capacitance
PIN Diode Selection Guide
Part NumberPackage / CaseForward CurrentReverse VoltageForward VoltageMaximum Diode CapacitanceData Sheet







Loading First Previous Next Last
NXP Schottky Diodes
Why choose NXP Semiconductors Schottky diodes:
  • (Very) low diode capacitance
  • (Very) low forward voltage
  • Single and triple-isolated diode
  • (Ultra / very) small package

Schottky Diodes Selection Guide
Part NumberPackage / CaseVrrm - Repetitive Reverse VoltageIf - Forward CurrentConfigurationVf - Forward VoltageIr - Reverse CurrentIfsm - Forward Surge CurrentData Sheet









Loading First Previous Next Last

RF MMICs

NXP's smart RF MMIC s (Monolithic Microwave ICs) automatically compensate for temperature and process variations. They dramatically reduce board space requirements, integrating transistors, resistors and capacitors into a single device. NXP's extensive selection of 50Ω gain blocks and low noise devices need no external matching components, reducing overall system costs and increasing reliability.

RF MMIC Selection Guide
Part NumberPackage / CaseP1dBOperating FrequencyPower Gain TypNoise FigureOutput Intercept PointData Sheet








Loading First Previous Next Last


RF Modules

NXP is one of the world's largest suppliers of CATV products, offering optical receivers, power doublers, push-pulls, and reverse amplifiers. We also have complete solutions for a range of optical networking systems, manufactured using the latest processes.

Optical Receivers Selection Guide
Part NumberPackage / CaseDescriptionData Sheet




Loading First Previous Next Last
 
Power Doublers Selection Guide
Part NumberPackage / CasePower Gain TypOperating FrequencySupply CurrentData Sheet






Loading First Previous Next Last
 
Push-Pulls Selection Guide
Part NumberPackage / CasePower Gain TypOperating FrequencySupply CurrentData Sheet






Loading First Previous Next Last
 
Reverse Amplifiers Selection Guide
Part NumberPackage / CasePower Gain TypOperating FrequencySupply CurrentData Sheet






Loading First Previous Next Last


NXP RF Bipolar Transistors

Classified according to transition frequency and noise / gain performance, NXP's wideband transistors offer a host of package, process and specifications options. The range is now up to its 7th generation, delivering operating frequencies from 100MHz to 20GHz

5-7th Generation NXP RF Bipolar Transistors
Part NumberPackage / CaseCollector- Emitter Voltage VCEO MaxFrequencyContinuous Collector CurrentPower DissipationData Sheet







Loading First Previous Next Last


Small-Signal FETs

NXP offers a wide range of proven RF small-signal FETs from N-channel dual gate MOSFET s through to dedicated P-channel JFETs for switching applications.

N-Channel Junction FETs Selection Guide
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageVgs - Gate-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet








Loading First Previous Next Last
 
N-Channel Junction FETs for Switching Selection Guide
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageVgs - Gate-Source Breakdown VoltageId - Continuous Drain CurrentPd - Power DissipationData Sheet







Loading First Previous Next Last
 
N-Channel Dual Gate MOSFETs Selection Guide
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageVgs - Gate-Source Breakdown VoltageId - Continuous Drain CurrentPd - Power DissipationData Sheet







Loading First Previous Next Last
 
N-Channel Single Gate MOSFETs Selection Guide
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageVgs - Gate-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs th - Gate-Source Threshold VoltageData Sheet








Loading First Previous Next Last
 
P-Channel Junction FETs for Switching Selection Guide
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageVgs - Gate-Source Breakdown VoltageId - Continuous Drain CurrentData Sheet






Loading First Previous Next Last


RF Power Transistors

Along with bipolar solutions, NXP - the LDMOS world leader - offers you an RF power transistor range that delivers best in-class efficiency, power, ruggedness and covers all frequency ranges for basestation, broadcast / ISM and aerospace & defense applications.


RF Power Transistors Selection Guide
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageVgs - Gate-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceData Sheet







Loading First Previous Next Last




RF Microwave Transistor

NXP Semiconductors offer BFU7xxF Microwave Transistors with low noise, high linearity in a plastic, 4-pin dual-emitter SOT343F package. BFU710F Microwave Transistors feature a high maximum power gain of 14dB at 12GHz and noise figure = 1.45dB at 12GHz. BFU760F Microwave Transistors feature high maximum output third order intercept point 32dBm at 1.8GHz. BFU790F Microwave Transistors feature high maximum output power at 1dB compression 20dBm at 1.8GHz. Applications for NXP Semiconductors BFU7xxF Microwave Transistors include high linearity applications, medium output power applications, GPS, Zigbee and Bluetooth.

RF Microwave Transistors Selector Guide
Part NumberPackage / CaseCollector- Emitter Voltage VCEO MaxContinuous Collector CurrentDC Collector/Base Gain hfe MinPower DissipationData Sheet







Loading First Previous Next Last

RF Microwave Transistor Evaluation Boards
Part NumberDescriptionTool Is For Evaluation OfData Sheet




Loading First Previous Next Last
eNews Learn More About NXP
  • NXP Semiconductors
  • Wireless
  • Semiconductors|IC-RF