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Home » NEWEST Products » New by Manufacturer » NXP Semiconductors » NXP PSMNxxx N-Channel MOSFETs
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NXP Semiconductors PSMNxxx N-Channel MOSFETs

NXP Semiconductors PSMNxxx N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, D2PAK, I2PAK, TO-220, TO-220F, and DFN3333-8 packages qualified to 150°C or 175°C. These NXP Semiconductors PSMNxxx N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The NXP logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The NXP standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.

Features & Benefits
  • High efficiency due to low switching and conduction losses
  • Suitable for standard or logic level gate drive sources
Applications
  • DC-to-DC converters
  • Lithium-ion battery protection
  • Load switching
  • Power OR-ing
  • Server power supplies
  • Sync rectifier
  • Motor control
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet








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Features & Benefits
  • High efficiency due to low switching and conduction losses
  • Suitable for standard or logic level gate drive sources
Applications
  • DC-to-DC converters
  • Lithium-ion battery protection
  • Load switching
  • Power OR-ing
  • Server power supplies
  • Sync rectifier
  • Motor control
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet








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Features & Benefits
  • High reliability Power SO8 package, qualified to 175°C
  • Optimized for 4.5V Gate drive utilizing NextPower Superjunction technology
  • Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads
  • Ultra low RDS(on) and low parasitic inductance
Applications
  • DC-to-DC converters
  • Lithium-ion battery protection
  • Load switching
  • Power OR-ing
  • Server power supplies
  • Sync rectifier
  • Motor control
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet








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Features & Benefit
  • High efficiency due to low switching and conduction losses
  • Isolated package
  • Suitable for standard or logic level gate drive sources
Applications
  • DC-to-DC converters
  • Lithium-ion battery protection
  • Load switching
  • Power OR-ing
  • Server power supplies
  • Sync rectifier
  • Motor control
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet








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  • NXP Semiconductors
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)