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Home » NEWEST Products » New by Manufacturer » NXP Semiconductors » Low VCEsat (BISS) Transistors - NXP
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NXP Low VCEsat (BISS) Transistors

NXP Low VCEsat (BISS) Transistors

NXP Low VCEsat (BISS) Transistors offer a dual load switch using double RETs and double BISS transistors. NXP Low VCEsat (BISS) Transistors keep power consumption and heat dissipation to a minimum, delivering low power consumption and high collector current capability by utilizing innovative mesh-emitter technology.

Features
  • High performance in reduced board space
  • High collector current gain hFE at high IC
  • Low collector-emitter saturation voltage VCEsat and corresponding resistance RCEsat (down to <30 mΩ)
  • Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK
  • High collector current capability IC and ICM
Applications
  • Power switch for LAN and ADSL systems / medium power DC-to-DC conversion
  • Inverter applications e.g. TFT displays
  • Medium power peripheral drivers e.g. fan, motor
  • Battery chargers / loadswitches
  • Strobe flash units for digital still cameras and mobile phones
Part Number Package / Case Transistor Polarity Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current Maximum DC Collector Current DC Current Gain hFE Max Data Sheet
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