Contact Mouser (USA)  (800) 346-6873     |     Feedback         
    
Cart  
 |    Change Country  Change Location  USD
 
United States United States

Please confirm your currency selection:

US Dollars
Home » NEWEST Products » New by Manufacturer » NXP Semiconductors » Low VCEsat (BISS) Transistors - NXP
NEWEST Products
NXP Low VCEsat (BISS) Transistors

NXP Low VCEsat (BISS) Transistors

NXP Low VCEsat (BISS) Transistors offer a dual load switch using double RETs and double BISS transistors. NXP Low VCEsat (BISS) Transistors keep power consumption and heat dissipation to a minimum, delivering low power consumption and high collector current capability by utilizing innovative mesh-emitter technology.

Features
  • High performance in reduced board space
  • High collector current gain hFE at high IC
  • Low collector-emitter saturation voltage VCEsat and corresponding resistance RCEsat (down to <30 mΩ)
  • Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK
  • High collector current capability IC and ICM
Applications
  • Power switch for LAN and ADSL systems / medium power DC-to-DC conversion
  • Inverter applications e.g. TFT displays
  • Medium power peripheral drivers e.g. fan, motor
  • Battery chargers / loadswitches
  • Strobe flash units for digital still cameras and mobile phones
Part NumberPackage / CaseTransistor PolarityCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum DC Collector CurrentDC Current Gain hFE MaxData Sheet
Loading First Previous Next Last
  • NXP Semiconductors
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)