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Home » NEWEST Products » New by Manufacturer » International Rectifier » International Rectifier Dual PQFN HEXFET® Power MOSFETs
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International Rectifier Dual PQFN HEXFET® Power MOSFETs

International Rectifier Dual PQFN
HEXFET® Power MOSFETs

International Rectifier's Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), International Rectifier's Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.

Part Number Package / Case Transistor Polarity Drain-Source Breakdown Voltage Continuous Drain Current Drain-Source On Resistance Gate Charge Qg Power Dissipation Data Sheet
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