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Home » NEWEST Products » New by Manufacturer » International Rectifier » International Rectifier DirectFETplus Power MOSFETs
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International Rectifier 25V DirectFET® HEXFET® Power MOSFETs

International Rectifier
DirectFET®plus Power MOSFETs

International Rectifier's DirectFET®plus Power MOSFETs features IR's new generation of silicon that sets a new standard in efficiency for 12V input synchronous buck applications including next-generation servers, desktops, and notebooks. These DirectFET®plus Power MOSFETs reduce on-state resistance (RDS(on)) and gate charge (Qg) compared to previous generation devices to significantly improve efficiency up to 2 percent. In addition, International Rectifier's DirectFET®plus Power MOSFETs offer ultra low gate resistance (Rg) enabling further efficiency improvement by minimizing switching losses in DC-DC converters. The DirectFET®plus Power MOSFETs combine industry leading RDS(on) and Rg, combined with low charge to minimize conduction and switching losses.

Features
  • RoHS Compliant
  • Low Profile (<0.7 mm)
  • Dual Sided Cooling Compatible
  • Optimized for High Frequency Switching
  • Ideal for CPU Core DC-DC Converters

  • Optimized for Control FET Application
  • Compatible with existing Surface Mount Techniques
  • 100% Rg tested
  • Footprint compatible to DirectFET™
Part NumberVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet







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