DirectFET®plus Power MOSFETs
International Rectifier's DirectFET®plus Power MOSFETs features IR's new generation of silicon that sets a new standard in efficiency for 12V input synchronous buck applications including next-generation servers, desktops, and notebooks. These DirectFET®plus Power MOSFETs reduce on-state resistance (RDS(on)) and gate charge (Qg) compared to previous generation devices to significantly improve efficiency up to 2 percent. In addition, International Rectifier's DirectFET®plus Power MOSFETs offer ultra low gate resistance (Rg) enabling further efficiency improvement by minimizing switching losses in DC-DC converters. The DirectFET®plus Power MOSFETs combine industry leading RDS(on) and Rg, combined with low charge to minimize conduction and switching losses.