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Home » NEWEST Products » New by Manufacturer » International Rectifier » IRF540N/Z Advanced HEXFET Power MOSFETs - IR
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International Rectifier IRF540N/Z Advanced HEXFET Power MOSFETs

International Rectifier IRF540N/Z Advanced
HEXFET Power MOSFETs

International Rectifier's IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free
Applications
  • AC-DC
  • Appliance
  • Audio
  • Industrial
  • Lighting
Part NumberPackage / CaseId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet







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