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Home » NEWEST Products » New by Manufacturer » Infineon Technologies » N-Channel OptiMOS Power MOSFETs - Infineon
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Infineon N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for dc-dc conversion.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Features
  • Optimized SyncFET for high performance buck converters
  • 100% avalanche tested
  • N-channel
  • Very low on-resistance RDS(on) @ VGS=4.5V
  • Ultra low gate (Qg) and output charge (Qoss) for given RDS(on)
  • Qualified according to JEDEC for target applications
  • Superior thermal resistance
  • Pb-free plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21
Applications
  • On board power for server
  • Power management for high performance computing
  • Synchronous rectification
  • High power density point of load converters


Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet







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