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Home » NEWEST Products » New by Manufacturer » Infineon Technologies » Infineon Generation 5 SiC Schottky Barrier Diodes
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Infineon Generation 5 SiC Schottky Barrier Diodes

Infineon Generation 5 SiC Schottky Barrier Diodes

Infineon's Generation 5 SiC Schottky Barrier Diodes deliver market leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf). These 5th Generation SiC Schottky Barrier Diodes implement a thinning process which allows reducing the wafer thickness by almost 2/3rds while maintaining the proven quality and yield levels. Typical applications include high-end server and telecom SMPS, PC Silverbox and lighting applications, solar inverters and UPS systems.

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved effciency over all load conditions
  • Increased effciency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability
  • Vbr at 650V
  • Improved Figure of Merit (Qc x Vf)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform

  • Temperature independent switching behavior
  • High operating temperature (Tj max 175°C)
  • Improved surge capability
  • Pb-free lead plating

  • Telecom/Server SMPS
  • Solar
  • UPS
  • PC Silverbox
  • Motor Drives
  • HID Lighting
Part NumberPackage / CaseVrrm - Repetitive Reverse VoltageIf - Forward CurrentIfsm - Forward Surge CurrentPd - Power DissipationData Sheet
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