Infineon Generation 5 SiC Schottky Barrier Diodes
Infineon's Generation 5 SiC Schottky Barrier Diodes deliver market leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf). These 5th Generation SiC Schottky Barrier Diodes implement a thinning process which allows reducing the wafer thickness by almost 2/3rds while maintaining the proven quality and yield levels. Typical applications include high-end server and telecom SMPS, PC Silverbox and lighting applications, solar inverters and UPS systems.