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Home » NEWEST Products » New by Manufacturer » Freescale Semiconductor » Freescale MRFE6VP6 RF LDMOS
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Freescale Semiconductor MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs

Freescale's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.

Features
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single--Ended or in a Push--Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation

  • Characterized with Series Equivalent Large--Signal Impedance Parameters
  • RoHS Compliant

Applications
  • Industrial: Laser and Plasma Exciters
  • Broadcast: Analog and Digital
  • Aerospace
  • Radio/Land Mobile Devices
Part Number Package Gain (dB) Efficiency (%) CW Operation (W) Datasheet
MRFE6VP5600HR5 NI-1230
25 at 230MHz 74.6 at 230MHz 600
MRFE6VP5600HSR6
NI-1230S25 at 230MHz74.6 at 230MHz600
MRFE6VP6300HR5 NI-780-4
25 at 130MHz 80 at 130MHz 300
MRFE6VP6300HSR5NI-780S-425 at 130MHz80 at 130MHz300
  • Freescale Semiconductor
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)|IC-RF