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Home » NEWEST Products » New by Manufacturer » Freescale Semiconductor » Freescale MRFE6VP8600H LDMOS N-Channel Broadband RF Power MOSFET
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Freescale MRFE6VP8600 LDMOS N-Channel Broadband RF Power MOSFET

Freescale MRFE6VP8600H LDMOS
N-Channel Broadband RF Power MOSFET

Freescale's MRFE6VP8600H LDMOS N-Channel Broadband RF Power MOSFET is designed for broadband operation from 470 to 860 MHz. This device has an integrated input matching network for better power distribution. The Freescale MRF6VP8600H is capable of handling 65:1 VSWR through all phase angles at 50 VDC, 860 MHz, has an exception efficiency for Class AB analog or digital television operation, has an integrated input matching, enables fast, easy and complete shutdown of the amplifier, and has an extended negative gate-source voltage range of -6.0 V to +10 V. These devices are ideally suited for use in analog or digital television transmitters.

Features
  • Capable of Handling >65:1 VSWR through all Phase Angles @ 50 VDC, 860 MHz, DVB-T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input Overdrive from Rated Pout)
  • Exceptional Efficiency for Class AB Analog or Digital Television Operation
  • Full Performance across Complete UHF TV Spectrum, 470-860 MHz
  • Capable of 600 Watt CW Output Power with Adequate Thermal Management
  • Integrated Input Matching

  • Extended Negative Gate-Source Voltage Range of -6.0 V to +10 V
  • Improves Class C Performance, e.g. in a Doherty Peaking Stage
  • Enables Fast, Easy and Complete Shutdown of the Amplifier
  • Characterized from 20 V to 50 V for Extended Operating Range for use with Drain Modulation
  • Excellent Thermal Characteristics
  • RoHS Compliant
Typical Narrowband Performance: VDD = 50 Volts, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz.
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
ACPR
(dBc)
IRL
(dB)
DVB-T (8k OFDM) 125 Avg. 860 19.3 30.0 -60.5 -12
Typical Pulsed Broadband Performance: VDD = 50 Volts, IDQ = 1400 mA, Pulsed Width = 100 μsec, Duty Cycle = 10%
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Pulsed 600 Peak 470 19.3 47.1
650 20.0 53.1
860 18.8 48.9
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  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)