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Home » NEWEST Products » New by Manufacturer » NXP Semiconductors » Freescale MRFE6VP61K25H Wideband RF Power LDMOS MOSFETs
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Freescale MRFE6VP61 Wideband RF Power LDMOS MOSFETs

Freescale MRFE6VP61K25H Wideband

Freescale's MRFE6VP61K25H Wideband RF Power LDMOS MOSFETs are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Features include devices can be used in either a single-ended or in a push-pull configuration, are suitable for linear application with appropriate biasing, and these devices have an integrated ESD protection with greater negative gate-source voltage range for improved Class C operation.

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type Pout
(100 μsec, 20% Duty Cycle)
1250 Peak 230 24 74
CW 1250 CW 230 22.9 74.6
  • Freescale Semiconductor
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)