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Home » NEWEST Products » New by Manufacturer » Freescale Semiconductor » Freescale MRF8S9200N Lateral N-Channel RF Power MOSFET
NEWEST Products
Freescale MRF8S9200 Lateral N-Channel RF Power MOSFET

Freescale MRF8S9200N Lateral
N-Channel RF Power MOSFET

The Freescale MRF8S9200N Lateral N-Channel RF Power MOSFET is designed for CDMA base station applications with frequencies from 920 to 960 MHz. Features include that it is characterized with series equivalent large-signal impedance parameters and common source S-parameters, is internally matched for ease of use, has integrated ESD protection, and has a greater negative gate-source voltage range for improved Class C operation. It can be used in Class AB and Class C for all typical cellular base station modulation formats.

Features
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation

  • 225°C Capable Plastic Package
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz 19.9 37.7 6.1 -36.2
940 MHz 19.9 37.1 6.1 -36.6
960 MHz 19.5 36.8 6.0 -36.0
  • Capable of Handling 10:1 VSWR, @ 32 VDC, 940 MHz, 300 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point ≃ 200 Watts CW
  • Freescale Semiconductor
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)