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Home » NEWEST Products » New by Manufacturer » Freescale Semiconductor » Freescale MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs
NEWEST Products
MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs

Freescale MRF6Vx Lateral N-Channel
Broadband RF Power MOSFETs

Freescale's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.

Features
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • CW Operation Capability with Adequate Cooling

  • Qualified Up to a Maximum of 50 VDD Operation
  • RoHS Compliant

Specifications - MRF6V2150N -

Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.
Frequency Power
Gain (dB)
Drain
Efficiency
ACPR
@ 4MHz Offset
225 MHz 25 0.285 -61
Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, Pulse Width = 100 μsec, Duty Cycle = 20%
Frequency Power
Gain (dB)
Drain
Efficiency
225 MHz 25.3 59%
Capable of Handling 10:1 VSWR, @ 50 VDC, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 μsec, Duty Cycle = 20%

Specifications - MRF6VP11K
-
Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20%
Frequency Power
Gain (dB)
Drain
Efficiency
130 MHz 26 71%
Capable of Handling 10:1 VSWR, @ 50 VDC, 130 MHz, 1000 Watts Peak Power

Specifications - MRF6VP2600H -

Typical CW Performance: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts
Frequency Power
Gain (dB)
Drain
Efficiency
220 MHz 25 68.3%
Capable of Handling 10:1 VSWR, @ 50 VDC, 220 MHz, 150 Watts CW Output Power
  • Freescale Semiconductor
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)