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Home » NEWEST Products » New by Manufacturer » Freescale Semiconductor » Freescale MRF6V3090N Broadband RF Power LDMOS MOSFET
NEWEST Products
Freescale MRF6V3090 Broadband RF Power LDMOS MOSFET

Freescale MRF6V3090N Broadband
RF Power LDMOS MOSFET

Freescale's MRF6V3090N Broadband RF Power LDMOS MOSFET is designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Features include that it is capable of handling 10:1 VSWR in all phase angles at 50 VDC, 860 MHz, is characterized with series equivalent large-signal impedance parameters, has integrated ESD protection, internally matched for ease of use, has excellent thermal stability, and has greater negative gate-source voltage range for improved Class C operation.

Features
  • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Input Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
Features
  • Integrated ESD Protection
  • Excellent Thermal Stability
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • 225°C Capable Plastic Package
Typical Performance (Narrowband Test Circuit): VDD = 50 Volts, IDQ = 350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
ACPR
(dBc)
DVB--T (8k OFDM) 18 Avg. 860 22 28.5 -62.0
Typical Performance (Broadband Reference Circuit): VDD = 50 Volts, IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Output
Signal PAR
(dB)
IMD
Shoulder
(dBc)
DVB-T (8k OFDM) 18 Avg. 470 21.6 26.8 8.6 -31.8
650 22.9 28.0 8.7 -34.4
860 21.9 28.3 7.9 -29.2
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