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Home » NEWEST Products » New by Manufacturer » Fairchild Semiconductor » Fairchild Semiconductor PowerTrench® MOSFETs
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Fairchild Semiconductor FDME10xx / FDFME2P
PowerTrench® MOSFETs


The Fairchild Semiconductor FDME10xx and FDFME2P PowerTrench® MOSFETs are designed specifically as a single package solution for the battery charge switch in cellular handsets and other ultra-portable applications. The Fairchild Semiconductor FDME1023PZT features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The FDME1024NZT is a dual N-Channel device with low on-state resistance for minimum conduction losses. The FDME1034CZT is a complementary PowerTrench device with an independent N-Channel and P-Channel MOSFET with low on-state resistance. The FDME1034CZT is minimized to allow high frequency switching directly from the controlling device. The Fairchild Semiconductor FDFME2P PowerTrench device features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.


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Learn More About Fairchild Cloud Power Management Solutions
FDME1023PZT Features
  • Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
  • Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
  • Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
  • Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  • Free from halogenated compounds and antimony oxides
  • HBM ESD protection level > 1600V
  • RoHS Compliant
FDME1023PZT Applications
  • Load Switch
  • Battery Charging
  • Battery Disconnect Switch
FDME1024NZT Features
  • Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
  • Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
  • Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
  • Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  • Free from halogenated compounds and antimony oxides
  • HBM ESD protection
  • RoHS Compliant
FDME1024NZT Applications
  • Baseband Switch
  • Load Switch


FDME1034CZT Features
  • Q1: N-Channel:
    Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
    Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
    Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
    Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A
  • Q2: P-Channel:
    Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
    Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
    Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
    Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  • Free from halogenated compounds and antimony oxides
  • HBM ESD protection level > 1600V
  • RoHS Compliant
FDME1034CZT Applications
  • DC-DC Conversion
  • Level Shifted Load Switch
FDFME2P823ZT Features
  • Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
  • Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
  • Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
  • Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  • Schottky: VF < 0.57 V @ 1A
  • Free from halogenated compounds and antimony oxides
  • HBM ESD protection level > 1600V (Note3)
  • RoHS Compliant
FDFME2P823ZT Applications
  • Battery Charging
  • DC-DC Conversion
Pin Diagrams / Block Diagrams
FDME1023PZT

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FDME1024NZT

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FDME1034CZT

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FDFME2P823ZT

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  • Power Management
  • Semiconductors|Transistors (FETs, Bipolars & IGBTs)