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Home » NEWEST Products » New by Manufacturer » Fairchild Semiconductor » Fairchild Semiconductor N-Channel PowerTrench® MOSFETs
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Fairchild Semiconductor

Fairchild Semiconductor N-Channel
PowerTrench® MOSFETs

Fairchild Semiconductor N-Channel PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Fairchild Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.

The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.

Part Number Package / Case Drain-Source Breakdown Voltage Continuous Drain Current Drain-Source On Resistance Power Dissipation Data Sheet
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