MACOM is a leading supplier of high performance analog RF, microwave, and millimeter wave products that enable next-generation Internet and modern battlefield applications. Recognized for its broad catalog portfolio of technologies and products, MACOM serves diverse markets, including high speed optical, satellite, radar, wired & wireless networks, CATV, automotive, industrial, medical, and mobile devices. A pillar of the semiconductor industry, the company thrives on more than 60 years of solving customers' most complex problems, serving as a true partner for applications ranging from RF to Light.
MACOM's MAAL-011111 Low Noise Amplifier is a three stage 22 - 38GHz GaAs MMIC low noise amplifier in a small and low cost 3X3mm QFN package. It offers 19dB of gain and less than 3dB of noise figure. The LNA is self-biased requiring only a single 3.3V voltage supply and there is no need for any external components. It is easy to implement and takes up a small board area. The high gain and low noise figure makes it well suited as a first stage LNA in receiver applications covering multiple bands simultaneously, such as the 24GHz and 36GHz range.
MACOM's MAFL MoCA Triplex Filters are designed to replace CAN (Community Area Network) triplex filters in real estate constrained CPE (Customer Premises Equipment) applications. This family of filters boast excellent temperature stability and repeatability. In addition, the surface mount design, allows for convenient high volume manufacturing. Boasting excellent Return loss, Insertion loss and Rejection, these devices are fully RoHS compliant. One PCB layout will accommodate all the filter splits offered in this family.
MACOM GaAs Flip Chip Diodes feature a high cutoff frequency,
and are fabricated on OMCVD epitaxial material using a process designed
for high device uniformity and extremely low parasitics. This diode is
fully passivated with silicon nitride and has an additional layer of
polyimide for scratch protection. The protective coating prevents damage
to the junction during automated or manual handling. The flip chip
configuration is suitable for pick and place insertion. This device with
can be attached with solder or conductive epoxy.
MACOM MADP-01102x Shunt PIN Diodes offer lead-free 1.5 x 1.2 mm DFN surface mount plastic packaged PIN diodes that provide both low and high signal frequency operation from 50 MHz to 12 GHz. The higher breakdown voltage and lower thermal resistance of the PIN diode provides peak power handling in excess of 100W. This device is ideally suitable for usage in higher incident power switches, phase shifters, attenuators, and limiter microwave circuits over a broad frequency where higher performance surface mount diode assemblies are required.
MACOM MAAM-011100 offers an easy-to-use, broadband, general
purpose variable gain amplifier. MACOM MAAM-011100 delivers over 30dB
gain range, controlled by a single control pin and 50Ω match is
maintained over all settings. The MAAM-011100 operates from 400MHz to
20GHz and features flat gain control from +10dB to -20dB. At maximum
gain setting (VC=Open) it delivers up to +18dBm power and under 5dB noise figure. Both reduce proportionally as gain is reduced with VC. The input IP3 exceeds +15dBm at max/min gain settings. The device is typically biased with a VD=+5V, VG=-0.5V, and a control of 0V to -2V. Typical current is 70mA with VG
at -0.5V The MAAM-011100 is ideally suited for use as a power amplifier
driver, gain trimming block, or temperature compensation in the receive
or transmit mode. Typical applications include Wi-Fi, LTE.
Point-to-Point, IMS, EW, and A&D systems. This device is housed in a
leadless 1.5x1.2mm package that can be handled and placed with standard
pick and place assembly equipment.
MACOM MAAM-011109 is a wideband amplifier that operates from
10MHz-40GHz. MACOM MAAM-011109 features 13dB gain and +18dBm of output
power. Matching is 50Ω with typical return loss better than 15dB. This
amplifier requires dual DC supplies: 5V (190mA) and a low current –5V
(<1mA). The MAAM-011109 integrates an ultra-broadband bias choke, DC
blocking and bypass capacitors. Other features include a gate bias
adjust pin to change current setting for power or temperature, a gain
trim control pin that allows 15dB of gain control (0 to -1V), and a
temperature compensated detector pin that provides a DC voltage in
relation to output power. The MAAM-011109 is ideally suited for any
application that requires 50Ω gain from 10MHz to 40GHz. It is useful in
applications where the incoming signal varies over a broad bandwidth
such as laboratory, instrumentation, and defense applications. This
device is housed in a leadless 5x5x1.3mm package that can be handled and
placed with standard pick and place assembly equipment. The package
base is a two layer laminate with overmold fully compatible with PCB
environment and wash conditions. The module includes a GaAs MMIC that is
fully passivated for performance and reliability.
MACOM Technology MAAL-010528 X-Band Low Noise Amplifier (LNA) operates from 8 to 12GHz, providing a nominal gain of 20dB with excellent gain flatness, high OIP3 linearity of 26dBm, and a mid-band noise figure of 1.6dB.This high-performance monolithic microwave IC features a self-bias architecture that requires only a single, positive supply. This MACOM device is internally matched to 50Ω input/output. The device's ease of use and excellent performance parameters make it ideal for use in a variety of applications, including Vsat, radar and microwave radios due to the part’s ease of use and excellent performance parameters.
MACOM Technology MAAM-011101 Ultra Small Broadband General Purpose Amplifier features a small case size (1.5mm x 1.2mm) that makes it appealing for a wide array of applications. It is fabricated using a GaAs process and its small package can still be handled with pick and place equipment. Typical applications for this MACOM MAAM-011101 GP Amplifier are WiFi, WiMax, Point to Point Radio, IMS, EW, and Aerospace and Defense. Typical usage in an application would include a buffer amplifier, gain block, mixer LO driver, or a power amp driver. MAAM-011101 operates from 4 to 20GHz and features 16dB typical gain and +18dBm of output power. The input and output are fully matched to 50Ω with a typical return loss better than 12dB. Small signal linearity is typically +30dBm and reverse isolation better than 28dB. This device requires a minimum of +5V, typically +8V, and maximum +10V for standard operation. Typical current is 45mA.
MACOM Technology Solutions MAAM-010373 50-1100MHz Broadband CATV Amplifier exhibits low distortion and high gain in a lead-free surface mount package. MACOM MAAM-010373 employs a monolithic single stage design featuring a convenient 75Ω input/output impedance that minimizes the number of external components required. This RF amplifier offers a low noise figure of 2.2dB and high gain of 22dB. MAAM-010373 is fabricated using a pHEMT process to realize low noise and low distortion. The process features full passivation for robust performance and reliability.
MACOM Technology Solutions E-Series Surface Mount RF Mixers are available in wide range of popular configurations. Many of the E-Series mixers utilize MACOM's HMIC diode process for guaranteed consistent performance. E-Series products are competitively priced for commercial, Broadband and COTs (Commercial off the Shelf) military applications. MACOM's mixers are widely used in aerospace and defense, wireless, and broadband communications applications. We offer a variety of connectorized, flat pack, drop-in, and surface mount packages with a broad range of operating frequency ranges and performance specifications.
MACOM's MAGX GaN HEMT RF Power Transistors offer a gold metalized Gallium Nitride (GaN) on Silicon Carbide RF Power transistor suitable for a variety of RF power amplifier applications. These devices use a state of the art wafer fabrication process that provide high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for today's demanding application needs. Features include GaN depletion mode HEMT microwave transistor, common source configuration, broadband class AB operation, thermally enhanced Cu/Mo/Cu package, +50V typical operation and MTTF of 114 years. Typical applications can include WCDMA, LTE and WiMAX commercial wireless infrastructure, public radio, industrial, scientific and medical, SATCOM, instrumentation, DTV and avionics.
MACOM's SPDT High Power, High Frequency Switches offer high linearity for 0.4-4.0 GHz/80 Watt (MASW-000932) and 0.05-6.0 GHz/120 Watt (MASW-000936) applications, including WiMAX, WiFi, High Power LTE, and TD-SCDMA. Both devices come in an industry standard, small, compact 4mm PQFN package. With exceptional broadband performance these switches offer an excellent isolation to loss ratio for both Tx and Rx states.
MACOM Technology Solutions MABA Transformer Designers' Kit features ten each of twelve different parts, for a total of 120 pieces. MABA Transformer Designers' Kit also includes a CD-ROM containing datasheets, S-parameters, and application notes. Ideally suited for broadband CATV applications.
MACOM Technology Solutions MAPS 4 bit/6 bit Phase Shifter is ideally suited for use where high phase accuracy with minimum loss variation over the phase shift range is required. The 4 mm PQFN package provides a smaller footprint than is typically available for a digital phase shifter with an internal driver. The MAPS 4 bit Phase Shifter is a GaAs pHEMT 4-bit digital phase shifter with an integrated CMOS driver in a 4 mm PQFN plastic surface mount package. Step size is 22.5° providing phase shift from 0° to 360° in 22.5° steps. The MAPS 6 bit Phase Shifter is a GaAs pHEMT 6-bit digital phase shifter with an integrated CMOS driver in a 4 mm PQFN plastic surface mount package. Step size is 5.6° providing phase shift from 0° to 360° in 5.6° steps. These designs have been optimized to minimize variation in attenuation over the phase shift range. Typical applications for MACOM Technology Solutions MAPS 4 bit/6 bit Phase Shifter include communications antennas and phased array radars.
MACOM Technology Solutions MAAL-010705 and MAAL-010706 are low noise amplifiers (LNAs) for cellular infrastructure applications. These MACOM Tech LNAs facilitate easy implementation in multiple RF and microwave front-end circuits, including GSM, CDMA, WCDMA, and LTE base stations and repeaters. The GaAs-based amplifiers meet the high performance requirements of telecom equipment manufacturers optimizing for minimum system noise figure and increased receiver sensitivity. MAAL-010705 and MAAL-010706 LNAs are highly linear devices with low noise figure, high gain, and excellent input and output return loss. They are designed for operation from 0.5 to 1.6GHz (MAAL-010705) and 1.4 to 4.0GHz (MAAL-010706), respectively. These MACOM Tech amplifiers share the same pin out and are packaged in a RoHS compliant leadless 2x2mm DFN package.
MACOM Tech MAAD-008866 is a 6-bit, 0.5-dB step GaAs digital attenuator in a lead-free 4mm PQFN-24LD surface mount package. The MACOM Tech MAAD-008866 digital attenuator includes an integrated TTL/CMOS compatible driver and parallel and serial (P/S) control with power-up state selection. It is ideal for use in high accuracy, low power consumption, and low intermodulation products. This MACOM Tech device can be used in 75Ω systems operating up to 1GHz.
MACOM Tech MRF series devices are high-performance 1MHz to 3.5GHz bipolar RF transistors. These MACOM Tech bipolar transistors are ideal for avionics, communications, radar, and industrial, scientific, and medical applications. MRF series devices are part of a broad range of RF power transistors that also includes pallet amplifiers, TMOS and DMOS transistors, and LDMOS transistors.
MACOM Tech MASW series RF switches provide a broad frequency spectrum from DC to greater than 70 GHz. MACOM Tech MASW switches are offered with silicon HMIC, AlGaAs, pHEMT, and MESFET technologies. MACOM Tech also offers 75 ohm switches. The HMIC PIN diode process is ideal for high power and broadband switches operating up to 20 GHz. The AlGaAs PIN diode switches have an upper frequency range of 70 GHz and beyond. GaAs pHEMT and MESFET technology are used in MASW fast switching and low control voltage switches optimized for both narrow band and broadband applications. The 75 ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure, and CPE applications. MASW series RF switches are ideal for applications used in the commercial, aerospace, and defense markets.