M/A-COM Technology Solutions is a leading supplier of high performance analog semiconductor solutions for use in radio frequency (RF), microwave, and millimeter wave applications. Recognized for its broad portfolio of products, M/A-COM Tech serves diverse markets, including CATV, wireless infrastructure, optical communications, aerospace and defense, automotive, industrial, medical, and mobile devices. M/A-COM Tech builds on more than 60 years of experience designing and manufacturing innovative product solutions for customers worldwide. Headquartered in Lowell, Massachusetts, M/A-COM Tech is certified to the ISO9001 international quality standard and ISO14001 environmental management standard.
M/A-COM Technology MAAL-010528 X-Band Low Noise Amplifier (LNA) operates from 8 to 12GHz, providing a nominal gain of 20dB with excellent gain flatness, high OIP3 linearity of 26dBm, and a mid-band noise figure of 1.6dB.This high-performance monolithic microwave IC features a self-bias architecture that requires only a single, positive supply. This M/A-COM device is internally matched to 50Ω input/output. The device's ease of use and excellent performance parameters make it ideal for use in a variety of applications, including Vsat, radar and microwave radios due to the part’s ease of use and excellent performance parameters.
M/A-COM Technology Solutions MAAM-010373 50-1100MHz Broadband CATV Amplifier exhibits low distortion and high gain in a lead-free surface mount package. M/A-COM MAAM-010373 employs a monolithic single stage design featuring a convenient 75Ω input/output impedance that minimizes the number of external components required. This RF amplifier offers a low noise figure of 2.2dB and high gain of 22dB. MAAM-010373 is fabricated using a pHEMT process to realize low noise and low distortion. The process features full passivation for robust performance and reliability.
M/A-COM Technology Solutions E-Series Surface Mount RF Mixers are available in wide range of popular configurations. Many of the E-Series mixers utilize M/A-COM's HMIC diode process for guaranteed consistent performance. E-Series products are competitively priced for commercial, Broadband and COTs (Commercial off the Shelf) military applications. M/A-COM's mixers are widely used in aerospace and defense, wireless, and broadband communications applications. We offer a variety of connectorized, flat pack, drop-in, and surface mount packages with a broad range of operating frequency ranges and performance specifications.
M/A Com's MAXG GaN HEMT RF Power Transistors offer a gold metalized Gallium Nitride (GaN) on Silicon Carbide RF Power transistor suitable for a variety of RF power amplifier application. These devices use a state of the art wafer fabrication process that provide high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for today's demanding application needs. Features include GaN depletion mode HEMT microwave transistor, common source configuration, broadband class AB operation, thermally enhanced Cu/Mo/Cu package, +50V typical operation and MTTF of 114 years. Typical applications can include WCDMA, LTE and WiMAX commercial wireless infrastructure, public radio, industrial, scientific and medical, SATCOM, instrumentation, DTV and avionics.
M/A Com's SPDT High Power, High Frequency Switches offer high linearity for 0.4-4.0 GHz/80 Watt (MASW-000932) and 0.05-6.0 GHz/120 Watt (MASW-000936) applications, including WiMAX, WiFi, High Power LTE, and TD-SCDMA. Both devices come in an industry standard, small, compact 4mm PQFN package. With exceptional broadband performance these switches offer an excellent isolation to loss ratio for both Tx and Rx states.
M/A-COM Technology Solutions MABA Transformer Designers' Kit features ten each of twelve different parts, for a total of 120 pieces. MABA Transformer Designers' Kit also includes a CD-ROM containing datasheets, S-parameters, and application notes. Ideally suited for broadband CATV applications.
M/A-COM Technology Solutions MAPS 4 bit/6 bit Phase Shifter is ideally suited for use where high phase accuracy with minimum loss variation over the phase shift range is required. The 4 mm PQFN package provides a smaller footprint than is typically available for a digital phase shifter with an internal driver. The MAPS 4 bit Phase Shifter is a GaAs pHEMT 4-bit digital phase shifter with an integrated CMOS driver in a 4 mm PQFN plastic surface mount package. Step size is 22.5° providing phase shift from 0° to 360° in 22.5° steps. The MAPS 6 bit Phase Shifter is a GaAs pHEMT 6-bit digital phase shifter with an integrated CMOS driver in a 4 mm PQFN plastic surface mount package. Step size is 5.6° providing phase shift from 0° to 360° in 5.6° steps. These designs have been optimized to minimize variation in attenuation over the phase shift range. Typical applications for M/A-COM Technology Solutions MAPS 4 bit/6 bit Phase Shifter include communications antennas and phased array radars.
The M/A-COM Technology Solutions MAAL-010705 and MAAL-010706 are low noise amplifiers (LNAs) for cellular infrastructure applications. These M/A-COM Tech LNAs facilitate easy implementation in multiple RF and microwave front-end circuits, including GSM, CDMA, WCDMA, and LTE base stations and repeaters. The GaAs-based amplifiers meet the high performance requirements of telecom equipment manufacturers optimizing for minimum system noise figure and increased receiver sensitivity. MAAL-010705 and MAAL-010706 LNAs are highly linear devices with low noise figure, high gain, and excellent input and output return loss. They are designed for operation from 0.5 to 1.6GHz (MAAL-010705) and 1.4 to 4.0GHz (MAAL-010706), respectively. These M/A-COM Tech amplifiers share the same pin out and are packaged in a RoHS compliant leadless 2x2mm DFN package.
M/A-Com Tech MAAD-008866 is a 6-bit, 0.5-dB step GaAs digital attenuator in a lead-free 4mm PQFN-24LD surface mount package. The M/A-Com Tech MAAD-008866 digital attenuator includes an integrated TTL/CMOS compatible driver and parallel and serial (P/S) control with power-up state selection. It is ideal for use in high accuracy, low power consumption, and low intermodulation products. This M/A-Com Tech device can be used in 75Ω systems operating up to 1GHz.
M/A-COM Tech MRF series devices are high-performance 1MHz to 3.5GHz bipolar RF transistors. These M/A-COM Tech bipolar transistors are ideal for avionics, communications, radar, and industrial, scientific, and medical applications. MRF series devices are part of a broad range of RF power transistors that also includes pallet amplifiers, TMOS and DMOS transistors, and LDMOS transistors.
M/A-COM Tech MASW series RF switches provide a broad frequency spectrum from DC to greater than 70 GHz. M/A-COM Tech MASW switches are offered with silicon HMIC, AlGaAs, pHEMT, and MESFET technologies. M/A-COM Tech also offers 75 ohm switches. The HMIC PIN diode process is ideal for high power and broadband switches operating up to 20 GHz. The AlGaAs PIN diode switches have an upper frequency range of 70 GHz and beyond. GaAs pHEMT and MESFET technology are used in MASW fast switching and low control voltage switches optimized for both narrow band and broadband applications. The 75 ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure, and CPE applications. MASW series RF switches are ideal for applications used in the commercial, aerospace, and defense markets.