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Littelfuse TVS Diodes - SMAJ, SMBJ, SMCJ, SMDJ, P6KE, 1.5KE Series

Protect Designs with Transient Voltage Suppressors

Littelfuse TVS Diodes are used to protect semiconductor components from high-voltage transients. Their p-n junctions have a larger cross-sectional area than those of a normal diode, allowing them to conduct large currents to ground without sustaining damage. Littelfuse supplies TVS Diodes with peak power ratings from 400W to 30kW, and reverse standoff voltages from 5V to 495V. Littelfuse SMAJ, SMBJ, SMCJ, SMDJ, P6KE, and 1.5KE TVS devices are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in Telecom, Computer, Industrial, and Consumer electronic applications.

Littelfuse TVS Diodes - SMAJ, SMBJ, SMCj, SMDj, P6KE, 1.5KE Series

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Littelfuse TVS Diode Features
  • Low incremental surge resistance
  • Unidirectional and Bidirectional polarities available
  • Reverse standoff voltages range from 5 to 512V
  • RoHS compliant-Matte Tin Pb-free plated
  • Surface-mount power ratings from 400W to 5,000W
  • Axial lead power ratings from 400W to 30,000W (30kW)
  • High current protection available for 6kA and 10kA
Littelfuse TVS Diode Applications
  • I/O Interfaces
  • VCC bus and other vulnerable circuits
  • Telecom
  • Computer
  • Industrial
  • Consumer Electronics


TVS Diode Product Characteristics
Series
Package Type
Reverse Standoff Voltage (VR)
Peak Pulse Power Range² (Ppp)
Operating Temperature
SMAJ
DO-214AC
5.0-440
400W
-85º to +302º F (-55º to +175º C)
SMBJ
DO-214AA
5.0-440
600W
-85º to +302º F (-55º to +175º C)
SMCJ
DO-214AB
5.0-440
1500W
-85º to +302º F (-55º to +175º C)
SMDJ
DO-214AB
5.0-170
3000W
-85º to +302º F (-55º to +175º C)
P6KE
DO-15
5.8-512
600W
-85º to +302º F (-55º to +175º C)
1.5KE
DO-201
5.8-495
1500W
-85º to +302º F (-55º to +175º C)

Transient Voltage Scenarios
Electrostatic Discharge (ESD)

Electrostatic discharge is characterized by very fast rise times and very high peak voltages and currents. This energy is the result of an imbalance of positive and negative charges between objects. ESD that is generated by everyday activities can far surpass the vulnerability threshold of standard semiconductor technologies.

  • Walking across a carpet: 35kV @ RH = 20%;1.5kV @ RH = 65%
  • Walking across a vinyl floor: 12kV @ RH = 20%;250V @ RH = 65%
  • Worker at a bench: 6kV @ RH = 20%;100V @ RH = 65%
  • Vinyl envelopes: 7kV @ RH = 20%;600V @ RH = 65%
Inductive Load Switching

The switching of inductive loads generates high energy transients which increase in magnitude with increasingly heavy loads. When the inductive load is switched off, the collapsing magnetic field is converted into electrical energy which takes the form of a double exponential transient. Depending on the source, these transients can be as large as hundreds of volts and hundreds of Amps, with duration times of 400 milliseconds.

Typical sources of inductive transients include:

  • Generator
  • Motor
  • Relay
  • Transformer
Lightning Strike

Even though a direct strike is clearly destructive, transients induced by lightning are not the result of a direct strike.

When a lightning strike occurs, the event creates a magnetic field which can induce transients of large magnitude in nearby electrical cables. A cloud-to-cloud strike will affect not only overhead cables, but also buried cables.

Even a strike 1 mile distant (1.6km) can generate 70 volts in electrical cables. In a cloud-to-ground strike (as shown at right) the transient-generating effect is far greater. The diagram at right shows a typical current waveform for induced lightning disturbances.







  • Littelfuse
  • Circuit Protection|Semiconductors|Discrete Semiconductors