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Fairchild FDC3535 Power Trench MOSFET
Fairchild Semiconductor's
FDC3535 P-Channel Power Trench™
MOSFET
is produced using their advanced
Power Trench® process that has been optimized for rDS(on), switching performance, and ruggedness.
Fairchild's
FDC3535 P-Channel Power Trench™
MOSFET
offers -2.1A continuous drain current, 183 mΩ at VGS,
high performance trench technology for extremely low rDS(on)(ON resistance), high power and current handling capability in a widely used surface mount package, fast switching speed, 100% UIL testing, and RoHS compliance. These components are ideal for load switch and synchronous rectifier applications.
FEATURES:
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High performance Trench Technology
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High power and current handling capability
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Fast switching speed
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100% UIL testing
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RoHS compliance
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