IXYS 650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.
IXYS CPC1593 Isolated Solid State Relay (SSR)
IXYS CPC1593 Isolated Solid State Relay (SSR) is a normally open (1-Form-A) SSR that offers integrated current limit with voltage and thermal protection. The load is not only protected, but also the relay itself, making the device highly effective in extremely harsh environments. CPC1593 bidirectional relay is ideally suited for advanced power management applications including in-rush current control, power supplies, industrial and process controllers, solenoid and valve controls, and HVAC. This SSR has UL, CSA, and EN/IEC approval.
IXYS CPC1966B Power Relay
IXYS CPC1966B Power Relay is an AC solid state switch with dual power SCR outputs. The device includes zero-cross turn-on circuitry and a blocking voltage of 800 VP. Optically coupled input and output circuits provide 5000 Vrms of isolation and noise immunity between the control and load circuits. CPC1966B is suitable for industrial applications where electromagnetic interference would be disruptive. Specific applications include process control, power control panels, contactors, solenoids, and motors.
IXYS MMIX1F44N100Q3 Q3-Class HiPerFET™ Power MOSFET
IXYS MMIX1F44N100Q3 Q3-Class HiPerFET™ Power MOSFET in a Surface Mount Power Device (SMPD) package, is available with a blocking voltage of 1000V and current rating of 30A. The device can be easily surface-mounted on a Printed Circuit Board (PCB), using a standard pick-and-place and reflow soldering process. No costly screws, cables, bus-bars or hand soldered contacts are needed. Weighing only 8g, it is much lighter (typically by 50%) than comparable conventional power modules. Due to its new compact and high performance SMPD package, the MMIX1F44N100Q3 MOSFET exhibits a low package inductance and high current handling capability.
IXYS HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.
These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
View all HiPerFET MOSFETs.
IXYS 1200V XPT™ High Speed IGBTs
IXYS's 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.
IXYS PolarP3™ Power MOSFETs
IXYS PolarP3™ HiPerFET product family is the latest addition to IXYS' benchmark high-performance Polar-Series product line. These MOSFETs combine IXYS' latest PolarP3™ Technology platform and HiPerFET™
process to bring superior performance and energy savings to a variety
of applications. Featuring low on state resistances and extremely low
gate charge values, IXYS PolarP3™ HiPerFETs enable
the development of more efficient power subsystems in applications such
as switch/resonant-mode power supplies and UPS' for telecommunication,
base stations, servers and server farms and energy efficient consumer
appliances. Other applications that will benefit from the MOSFETs
include power factor correction circuits, motor drives, lamp ballasts,
laser drivers, DC-DC converters, battery chargers, robotic and servo
control.
IXYS Discrete 600V XPT IGBTs
IXYS Discrete 600V XPT IGBTs are highly rugged, low loss semiconductor devices that are easily configured in parallel. Developed using IXYS' extreme light punch through (XPT) design platform, these new devices feature excellent electrical characteristics which include low typical Vcesat, low typical current fall times, and low typical turn-off energy per pulse values. They demonstrate exceptional ruggedness during switching and under short circuit conditions, achieved through a 10us short circuit safe operating area (SCSOA), dynamic avalanche ratings, and a square reverse bias safe operating area (RBSOA) rated up to the device's blocking voltage. These devices also feature an extended forward bias safe operating area (FBSOA), allowing for a "wider operating window" as dictated by the power limitations of the device.
IXYS Discrete 600V XPT IGBTs are available in two speed classifications, B3 and C3, which offer designers a more flexible approach to device selection regarding critical requirements such as switching frequency, saturation voltage, and cost. B3-Class devices feature an excellent balance between conduction and switching losses and are optimized for hard switching frequencies from 10kHz to 30kHz. C3-Class devices are optimized for minimal switching losses and are recommended for hard switching frequencies from 20kHz to 60kHz.
IXYS Linear Power MOSFETs with Extended FBSOA
IXYS Linear Power MOSFETs with Extended FBSOA are N-Channel enhancement mode power MOSFETs designed for linear operation in an international standard package. IXYS Linear Power MOSFETs with Extended FBSOA feature a miniBLOC with aluminium nitride isolation, high power density, a space-saving and easy-to-mount package, and molding epoxy which meets the UL94 V-0 flammability classification. These MOSFETs are useful for such applications as programmable loads, current regulators, DC-DC converters, battery chargers, DC choppers, and temperature and lighting controls.
IXYS IXTV02N250S High Voltage Power MOSFET
IXYS IXTV02N250S High Voltage Power MOSFET is an N-Channel enhancement mode, avalanche rated power MOSFET featuring a fast intrinsic diode, low package inductance, and a space-saving, easy to mount package. IXYS IXTV02N250S High Voltage Power MOSFET is useful for applications such as high voltage power supplies, capacitor discharge, and pulse circuits.
IXYS IXTP60N20T Trench™ Power MOSFET
IXYS IXTP60N20T Trench™ Power MOSFET is an N-Channel enhancement mode, avalanche rated power MOSFET for PDP drivers. IXYS IXTP60N20T Trench™ Power MOSFET features a high current handling capability, low RDS(on), high power density, and a fast intrinsic rectifier. This MOSFET is useful for applications such as DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC choppers, AC motor drives, uninterruptible power supplies, and high speed power switching applications.
IXYS High Performance Schottky Diodes & Rectifiers
IXYS High Performance Schottky Diodes & Rectifiers feature very low VF, switching losses, and IRM values in international standard packages. IXYS High Performance Schottky Diodes & Rectifiers have high reliability circuit operation, low voltage peaks for reduced protection circuits, and low noise switching. These Schottky Diodes & Rectifiers are ideal for applications such as switch mode power supplies (SMPS) and low voltage converters.
IXYS IGBT Power Transistors
IXYS IGBT Power Transistors include the IXBH42N170A, IXBT42N170, IXGH24N60AU1, and the IXGK75N250. The IXYS IXBH42N170A is a BIMOSFET™ Monolithic Bipolar MOS Transistor featuring high blocking voltage, fast switching, a high current handling capability, and MOS Gate turn-on for drive simplicity. The IXBT42N170 is a high voltage, high gain BIMOSFET™ Monolithic Bipolar MOS Transistor also featuring high blocking voltage, as well as low conduction losses, high power density, and a low gate drive requirement. The IXGH24N60AU1 is a HiPerFAST™ IGBT with Diode featuring an IGBT and anti-parallel Fast Recovery Epitaxial Diode (FRED) in one package, a 2nd generation HDMOS™ process, and a MOS Gate turn-on for drive simplicity. And the IXGK75N250 is a high voltage IGBT for capacitor discharge applications, featuring very high peak current capability, low saturation voltage, MOS Gate turn-on, and a rugged NPT structure. IXYS IGBT Power Transistors are useful for a wide variety of applications, including AC motor speed control, uninterruptible power supplies (UPS), switched-mode and resonant-mode power supplies, capacitor discharge circuits, laser generators, AC switches, and pulser circuits.
IXYS IXTA220N055T TrenchMV™ Power MOSFET
IXYS IXTA220N055T TrenchMV™ Power MOSFET is an N-Channel enhancement mode avalanche rated power MOSFET, featuring ultra-low On resistance, high power density, and low package inductance, making it easy to drive and to protect. IXYS IXTA220N055T TrenchMV™ Power MOSFET is easy to mount and is Unclamped Inductive Switching (UIS) rated. This MOSFET is useful for automotive applications such as motor drives, high side switches, 12V batteries, and ABS systems. It is also useful for other applications including DC/DC converters and off-line UPS, primary-side switches, and high current switching applications.
IXYS PolarP2™ Power MOSFETs
IXYS PolarP2™ Power MOSFETs are rugged, energy-efficient power MOSFET solutions manufactured using the IXYS proprietary PolarP2 Technology Platform for optimized low on-state resistance and gate charge. These PolarP2 power MOSFETs are available with drain current ratings of 16, 22, 42, and 52A and feature a reduction in on-state resistance of up to 20 percent compared with previous Polar-Series generations. These easy-to-mount IXYS devices include avalanche capabilities that add an additional safeguard against over-voltage transients. Polar-Series Power MOSFETs allow for the development of more efficient power subsystems in applications such as high frequency inverters in power conversion and solar energy generation.
IXYS GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
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