IXYS
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications.
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IXYS PolarP3™ Power MOSFETs
IXYS PolarP3™ HiPerFET product family is the latest addition to IXYS' benchmark high-performance Polar-Series product line. These MOSFETs combine IXYS' latest PolarP3™ Technology platform and HiPerFET™
process to bring superior performance and energy savings to a variety
of applications. Featuring low on state resistances and extremely low
gate charge values, IXYS PolarP3™ HiPerFETs enable
the development of more efficient power subsystems in applications such
as switch/resonant-mode power supplies and UPS' for telecommunication,
base stations, servers and server farms and energy efficient consumer
appliances. Other applications that will benefit from the MOSFETs
include power factor correction circuits, motor drives, lamp ballasts,
laser drivers, DC-DC converters, battery chargers, robotic and servo
control.
IXYS Discrete 600V XPT IGBTs
IXYS Discrete 600V XPT IGBTs are highly rugged, low loss semiconductor devices that are easily configured in parallel. Developed using IXYS' extreme light punch through (XPT) design platform, these new devices feature excellent electrical characteristics which include low typical Vcesat, low typical current fall times, and low typical turn-off energy per pulse values. They demonstrate exceptional ruggedness during switching and under short circuit conditions, achieved through a 10us short circuit safe operating area (SCSOA), dynamic avalanche ratings, and a square reverse bias safe operating area (RBSOA) rated up to the device's blocking voltage. These devices also feature an extended forward bias safe operating area (FBSOA), allowing for a "wider operating window" as dictated by the power limitations of the device.
IXYS Discrete 600V XPT IGBTs are available in two speed classifications, B3 and C3, which offer designers a more flexible approach to device selection regarding critical requirements such as switching frequency, saturation voltage, and cost. B3-Class devices feature an excellent balance between conduction and switching losses and are optimized for hard switching frequencies from 10kHz to 30kHz. C3-Class devices are optimized for minimal switching losses and are recommended for hard switching frequencies from 20kHz to 60kHz.
IXYS High Performance Schottky Diodes & Rectifiers
IXYS High Performance Schottky Diodes & Rectifiers feature very low VF, switching losses, and IRM values in international standard packages. IXYS High Performance Schottky Diodes & Rectifiers have high reliability circuit operation, low voltage peaks for reduced protection circuits, and low noise switching. These Schottky Diodes & Rectifiers are ideal for applications such as switch mode power supplies (SMPS) and low voltage converters.
IXYS IGBT Power Transistors
IXYS IGBT Power Transistors include the IXBH42N170A, IXBT42N170, IXGH24N60AU1, and the IXGK75N250. The IXYS IXBH42N170A is a BIMOSFET™ Monolithic Bipolar MOS Transistor featuring high blocking voltage, fast switching, a high current handling capability, and MOS Gate turn-on for drive simplicity. The IXBT42N170 is a high voltage, high gain BIMOSFET™ Monolithic Bipolar MOS Transistor also featuring high blocking voltage, as well as low conduction losses, high power density, and a low gate drive requirement. The IXGH24N60AU1 is a HiPerFAST™ IGBT with Diode featuring an IGBT and anti-parallel Fast Recovery Epitaxial Diode (FRED) in one package, a 2nd generation HDMOS™ process, and a MOS Gate turn-on for drive simplicity. And the IXGK75N250 is a high voltage IGBT for capacitor discharge applications, featuring very high peak current capability, low saturation voltage, MOS Gate turn-on, and a rugged NPT structure. IXYS IGBT Power Transistors are useful for a wide variety of applications, including AC motor speed control, uninterruptible power supplies (UPS), switched-mode and resonant-mode power supplies, capacitor discharge circuits, laser generators, AC switches, and pulser circuits.
IXYS IXTA220N055T TrenchMV™ Power MOSFET
IXYS IXTA220N055T TrenchMV™ Power MOSFET is an N-Channel enhancement mode avalanche rated power MOSFET, featuring ultra-low On resistance, high power density, and low package inductance, making it easy to drive and to protect. IXYS IXTA220N055T TrenchMV™ Power MOSFET is easy to mount and is Unclamped Inductive Switching (UIS) rated. This MOSFET is useful for automotive applications such as motor drives, high side switches, 12V batteries, and ABS systems. It is also useful for other applications including DC/DC converters and off-line UPS, primary-side switches, and high current switching applications.
IXYS PolarP2™ Power MOSFETs
IXYS PolarP2™ Power MOSFETs are rugged, energy-efficient power MOSFET solutions manufactured using the IXYS proprietary PolarP2 Technology Platform for optimized low on-state resistance and gate charge. These PolarP2 power MOSFETs are available with drain current ratings of 16, 22, 42, and 52A and feature a reduction in on-state resistance of up to 20 percent compared with previous Polar-Series generations. These easy-to-mount IXYS devices include avalanche capabilities that add an additional safeguard against over-voltage transients. Polar-Series Power MOSFETs allow for the development of more efficient power subsystems in applications such as high frequency inverters in power conversion and solar energy generation.
IXYS GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.