IXYS
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications.
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IXYS PolarP3™ Power MOSFETs
IXYS PolarP3™ HiPerFET product family is the latest addition to IXYS' benchmark high-performance Polar-Series product line. These MOSFETs combine IXYS' latest PolarP3™ Technology platform and HiPerFET™
process to bring superior performance and energy savings to a variety
of applications. Featuring low on state resistances and extremely low
gate charge values, IXYS PolarP3™ HiPerFETs enable
the development of more efficient power subsystems in applications such
as switch/resonant-mode power supplies and UPS' for telecommunication,
base stations, servers and server farms and energy efficient consumer
appliances. Other applications that will benefit from the MOSFETs
include power factor correction circuits, motor drives, lamp ballasts,
laser drivers, DC-DC converters, battery chargers, robotic and servo
control.
IXYS PolarP2™ Power MOSFETs
IXYS PolarP2™ Power MOSFETs are rugged, energy-efficient power MOSFET solutions manufactured using the IXYS proprietary PolarP2 Technology Platform for optimized low on-state resistance and gate charge. These PolarP2 power MOSFETs are available with drain current ratings of 16, 22, 42, and 52A and feature a reduction in on-state resistance of up to 20 percent compared with previous Polar-Series generations. These easy-to-mount IXYS devices include avalanche capabilities that add an additional safeguard against over-voltage transients. Polar-Series Power MOSFETs allow for the development of more efficient power subsystems in applications such as high frequency inverters in power conversion and solar energy generation.
IXYS GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
IXYS 900V Polar HiPerFET™ Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
IXYS Low-Side Gate Driver ICs
These ultra-fast high-current gate driver ICs from IXYS are optimized for high-efficiency performance in motor drive and power conversion applications. The gate driver ICs are designed to switch the largest MOSFETs and IGBTs with minimum switching times at frequencies up to 10MHz. Manufactured in industry standard outlines that include TO-263 and TO-220, the multiple IC packages offer superior thermal performance.
IXYS HiPerFET™ Power MOSFETs
These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.