IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications.
View products previously under the brand name of "Clare" at IXYS Integrated Circuits.
IXYS offers a variety of low-side, high-side, high-side & low-side, and optically isolated MOSFET and IGBT Gate Drivers for a number of applications. The low-side gate drivers are ultra-fast, high current MOSFET and IGBT gate drivers that are optimized for high efficiency performance in motor drive and power conversion applications. The high-side gate drivers use a proprietary common-mode design techniques provide stable operation in high dV/dt noise environments. The high-side & low-side gate drivers are configured with independent high-side and low-side referenced output channels, both of which can source and sink up to 2A. The optically isolated gate drivers couple infrared light emitting diodes with proprietary photovoltaic integrated circuits to provide voltage for turn-on of discrete MOSFETs, and feature a gate-clamping circuit to provide fast turn-off.
IXYS CPC5001 Series Dual, One Channel Each Direction Digital
Optical Isolatoris is a dual, non-inverting digital optical isolator with
buffered-logic inputs and open-drain outputs. Channel 1 propagates a
signal from Side A to Side B, while Channel 2 sends a signal from Side B
to Side A. It provides galvanic isolation up to 3750Vrms. When the two
sides are powered by supplies with different voltages, it also functions
as a logic level translator for supply voltages as low as 2.7V or as
high as 5.5V. Available in 8-pin DIP and surface mount packages, it
functionally replaces two logic buffers and two single-channel
optoisolators. Internal bandgap references regulate the LED drive
currents to 3mA to reduce peak power requirements. Unlike transformer or
capacitive isolators, optical isolation passes DC signals, and does not
need to be clocked periodically to refresh state. Buffered signals will
always return to their proper value after a transient interruption at
IXYS CPC1907B Single-Pole, Normally Open Power SOIC OptoMOS Relay
is a single-pole, normally open (1-Form-A) solid state relay that
employs optically coupled MOSFET technology to provide 5000Vrms of input
to output isolation. Switching of the efficient MOSFET switches is
controlled by the photovoltaic die using the patented OptoMOS
architecture while activation of the output is controlled by a highly
efficient GaAlAs infrared LED. The combination of low on-resistance and
high load current handling capabilities makes the relay suitable for a
variety of high-performance switching applications.
IXYS IXEP2300 ePaper Gate Driver is a 300 channel, 42V display
gate driver. It has an internal pattern generator for applications where
minimal controller interface is desirable. It also has global blanking
and inversion to facilitate powering up and down the display in the
inactive state. The IXEP2300 also features token passing capability, and
a sleep mode to reduce power consumption.
IXYS IX2113 Low Side Gate Driver is a high voltage integrated
circuit that can drive high speed MOSFETs and IGBTs that operate at up
to +600V. The IX2113 is configured with independent high-side and
low-side referenced output channels, both of which can source and sink
2A. The floating high-side channel can drive an N-channel power MOSFET
or IGBT 600V from the common reference. Manufactured on IXYS Integrated
Circuits Division's proprietary high-voltage BCDMOS on SOI (silicon on
insulator) process, the IX2113 is extremely robust, and is virtually
immune to negative transients. The UVLO circuit prevents the turn-on of
the MOSFET or IGBT until there is sufficient VBS or VCC supply voltage.
Propagation delays are matched for use in high frequency applications. The IX2113 is available in a 16-pin SOIC package.
IXYS PLA192E and PLA193E Solid State Relays are 600V, single-pole, normally open SSRs with 150mA and 100mA load current ratings, respectively. With an exclusive patented optically coupled photovoltaic technology and efficient MOSFET output switches, the devices provide an enhanced input-to-output isolation of 5000 Vrms. Partial discharge testing and EN60747-5-5 certification ensures the devices will not fail after extended time and voltage bias.
IXYS 4500V High Voltage Power MOSFETs are the highest voltage Power MOSFET product line in the industry in international standard size packages. The current ratings range from 200mA to 2A. They are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. These can provide an optimal solution for applications such as capacitor discharge circuits, high-voltage automated test equipment, laser and x-ray generation systems, high-voltage power supplies, and pulse circuits.
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.
IXYS CPC1593 Isolated Solid State Relay (SSR) is a normally open (1-Form-A) SSR that offers integrated current limit with voltage and thermal protection. The load is not only protected, but also the relay itself, making the device highly effective in extremely harsh environments. CPC1593 bidirectional relay is ideally suited for advanced power management applications including in-rush current control, power supplies, industrial and process controllers, solenoid and valve controls, and HVAC. This SSR has UL, CSA, and EN/IEC approval.
IXYS CPC1966B Power Relay is an AC solid state switch with dual power SCR outputs. The device includes zero-cross turn-on circuitry and a blocking voltage of 800 VP. Optically coupled input and output circuits provide 5000 Vrms of isolation and noise immunity between the control and load circuits. CPC1966B is suitable for industrial applications where electromagnetic interference would be disruptive. Specific applications include process control, power control panels, contactors, solenoids, and motors.
IXYS MMIX1F44N100Q3 Q3-Class HiPerFET™ Power MOSFET in a Surface Mount Power Device (SMPD) package, is available with a blocking voltage of 1000V and current rating of 30A. The device can be easily surface-mounted on a Printed Circuit Board (PCB), using a standard pick-and-place and reflow soldering process. No costly screws, cables, bus-bars or hand soldered contacts are needed. Weighing only 8g, it is much lighter (typically by 50%) than comparable conventional power modules. Due to its new compact and high performance SMPD package, the MMIX1F44N100Q3 MOSFET exhibits a low package inductance and high current handling capability.
IXYS's 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.
IXYS Linear Power MOSFETs with Extended FBSOA are N-Channel enhancement mode power MOSFETs designed for linear operation in an international standard package. IXYS Linear Power MOSFETs with Extended FBSOA feature a miniBLOC with aluminium nitride isolation, high power density, a space-saving and easy-to-mount package, and molding epoxy which meets the UL94 V-0 flammability classification. These MOSFETs are useful for such applications as programmable loads, current regulators, DC-DC converters, battery chargers, DC choppers, and temperature and lighting controls.
IXYS IXTV02N250S High Voltage Power MOSFET is an N-Channel enhancement mode, avalanche rated power MOSFET featuring a fast intrinsic diode, low package inductance, and a space-saving, easy to mount package. IXYS IXTV02N250S High Voltage Power MOSFET is useful for applications such as high voltage power supplies, capacitor discharge, and pulse circuits.
IXYS IXTP60N20T Trench™ Power MOSFET is an N-Channel enhancement mode, avalanche rated power MOSFET for PDP drivers. IXYS IXTP60N20T Trench™ Power MOSFET features a high current handling capability, low RDS(on), high power density, and a fast intrinsic rectifier. This MOSFET is useful for applications such as DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC choppers, AC motor drives, uninterruptible power supplies, and high speed power switching applications.