Integrated Silicon Solution, Inc. (ISSI) designs, and develops high performance integrated circuits for digital consumer electronics, networking, mobile communications, and automotive electronics.
ISSI's IS43DR16160A 16Mx16 DDR2 SDRAM is a Double Data Rate (DDR) Synchronous DRAM (SDRAM) organized as 4M x 16 bits x 4 banks. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O balls.
ISSI's IS43LR16800F 2Mx16 Mobile DDR SDRAM is 134,217,728 bits Mobile Double Data Rate (DDR) Synchronous DRAM (SDRAM) organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock.
ISSI’s IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.
ISSI IS62WV5128DBLL is a high-speed, 4Mb static RAM device organized as 512K words by 8 bits. This ISSI static RAM device features high-speed access time (45ns) and CMOS low power operation (36mW typ. operating / 9µW typ CMOS standby). IS62WV5128DBLL provides fully static operation with no clock or refresh required. This ISSI RAM also offers industrial and automotive temperature support.
ISSI High Speed Asynchronous SRAMs are high-speed, static RAMs organized in various access speeds (8ns, 10ns, 12ns 20ns, 25ns, 35ns and 45ns) and densities (64KB to 16MB). These High Speed Asynchronous SRAMs are fabricated using ISSI's high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. ISSI High Speed Asynchronous SRAMs offer features which include high access speed, low active power, low standby power with a single power supply. These ISSI devices are excellent in many industrial and automotive applications.
ISSI ultra-low power SRAM devices offer significant power savings compared to the previous versions and feature the lowest operating current in the industry. ISSI ultra-low power SRAM devices feature high-speed access time (45ns, 55ns and 70ns) and CMOS low power operation (12 mW typical operating current and 4 µW typical CMOS standby). These ultra-low power SRAMs also provide fully static operation with no clock or refresh required and are ideal for industrial and automotive temperature support.
The ISSI high-performance QUAD Synchronous SRAM family is ideal for networking applications and is compatible with QDR II™ products. The ISSI QUAD Synchronous SRAM family includes the IS61QDB21M36, which is a burst of two, separate I/O devices organized as 1Mx36, and the IS61QDB22M18, which is the 2Mx18 version. ISSI QUAD Synchronous SRAM family devices run at 250 MHz and are packaged in a 165-ball fine ball grid array package with a 15 mm x 17mm body size and a 1mm pitch.
The ISSI Pseudo SRAM product line combines the best features of SRAM and DRAM to provide designers with an easy-to-use, low-power, cost-effective memory solution. These ISSI Pseudo SRAM devices have a pinout identical to and are drop-in replacements for regular 4MB to 64MB low power SRAMs. These ISSI Pseudo SRAMs are fabricated on 0.14 micron DRAM technology and are available in commercial 0° to 70º C and industrial -40° C to 85º C temperature ranges. Both 1.8V and 3.0V operating voltage versions are available.