Integrated Silicon Solution, Inc. (ISSI) designs, and develops high performance integrated circuits for digital consumer electronics, networking, mobile communications, and automotive electronics.
ISSI Pseudo SRAM (PSRAM)/CellularRAM™ offers designers an option of the best of both DRAM and SRAM features. The PSRAM/CellularRAM has a SRAM-like architecture. Unlike DRAM, there is a hidden refresh feature which does not require physical refresh. The CellularRAM is designed in accordance to the CellularRAM standards and is available in CRAM 1.5 and CRAM 2.0. This family of products offers fast access, asynchronous, page and burst functions for different application requirements. The products support low voltage which reduces over all power consumption. These products are available in commercial, industrial and automotive operating temperature range, which is suitable to support applications in these markets.
ISSI IS43TRx 2GB DDR3 SDRAMs delivers high speed SDRAM in a small BGA-96 or BGA-78 package. ISSI 2GBit DDR3 SDRAM features 128Mx16 or 256Mx8 organization and supply voltage at 1.35V with a maximum clock frequency of 666MHz or 800MHz. Features include bidirectional differential data strobe, data masking per byte on Write commands, programmable burst length of 4 or 8, with programmable CAS latency. Applications include Telecom and Networking, Automotive, and Industrial embedded computing.
ISSI's IS43TR16640A 64Mx16 1-Gbit DDR3 SDRAMs are the latest generation of DRAMs from ISSI. These devices operate at 1.5V (IS43TR16640A) or 1.35V (IR43TR16640AL) and are available with clock speeds up to 800MHz. By using advanced technology, ISSI is able to provide the long lifecycle product support as required by applications in automotive, communications, industrial, medical and mil-aerospace. Typical applications include access nodes, aggregation nodes, switches, routers, packet optical transport, network storage, infotainment, telematics, driver information systems, human machine interface, and embedded computing.
ISSI NOR Flash ICs are Serial Peripheral Interface (SPI) Flash memories, providing single, dual, or quad output. ISSI NOR Flash ICs use a single low voltage power supply to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers. These devices are accessed through a 4-wire SPI Interface consisting of Serial Data Input/Output (SIO), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. The 25LD family offers highest performance & endurance of 200K cycles and 20 years of solid data retention. The IS25LD/WD family supports Dual-SPI effectively doubling standard SPI clock rates, and the IS25 LQ/WQ family supports single, Dual-I/O, and Quad-I/O for even higher performance. These parts can support up to 104MHz an equivalent of 416Mhz (50Mb/sec throughput) when using Quad mode.
ISSI IS43DR16160A 16Mx16 DDR2 SDRAM is a Double Data Rate (DDR) Synchronous DRAM (SDRAM) organized as 4M x 16 bits x 4 banks. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O balls.
ISSI IS43LR16800F 2Mx16 Mobile DDR SDRAM is 134,217,728 bits Mobile Double Data Rate (DDR) Synchronous DRAM (SDRAM) organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock.
ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.
ISSI IS62WV5128DBLL is a high-speed, 4Mb static RAM device organized as 512K words by 8 bits. This ISSI static RAM device features high-speed access time (45ns) and CMOS low power operation (36mW typ. operating / 9µW typ CMOS standby). IS62WV5128DBLL provides fully static operation with no clock or refresh required. This ISSI RAM also offers industrial and automotive temperature support.
ISSI High Speed Asynchronous SRAMs are high-speed, static RAMs organized in various access speeds (8ns, 10ns, 12ns 20ns, 25ns, 35ns and 45ns) and densities (64KB to 16MB). These High Speed Asynchronous SRAMs are fabricated using ISSI's high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. ISSI High Speed Asynchronous SRAMs offer features which include high access speed, low active power, low standby power with a single power supply. These ISSI devices are excellent in many industrial and automotive applications.
ISSI high-performance QUAD Synchronous SRAM family is ideal for networking applications and is compatible with QDR II™ products. The ISSI QUAD Synchronous SRAM family includes the IS61QDB21M36, which is a burst of two, separate I/O devices organized as 1Mx36, and the IS61QDB22M18, which is the 2Mx18 version. ISSI QUAD Synchronous SRAM family devices run at 250 MHz and are packaged in a 165-ball fine ball grid array package with a 15 mm x 17mm body size and a 1mm pitch.
ISSI Pseudo SRAM product line combines the best features of SRAM and DRAM to provide designers with an easy-to-use, low-power, cost-effective memory solution. These ISSI Pseudo SRAM devices have a pinout identical to and are drop-in replacements for regular 4MB to 64MB low power SRAMs. These ISSI Pseudo SRAMs are fabricated on 0.14 micron DRAM technology and are available in commercial 0° to 70º C and industrial -40° C to 85º C temperature ranges. Both 1.8V and 3.0V operating voltage versions are available.