ISSI
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Integrated Silicon Solution, Inc. (ISSI) designs, and develops high performance integrated circuits for digital consumer electronics, networking, mobile communications, and automotive electronics.
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ISSI Ultra-Low Power SRAM
ISSI ultra-low power SRAM devices offer significant power savings compared to the previous versions and feature the lowest operating current in the industry. ISSI ultra-low power SRAM devices feature high-speed access time (45ns, 55ns and 70ns) and CMOS low power operation (12 mW typical operating current and 4 µW typical CMOS standby). These ultra-low power SRAMs also provide fully static operation with no clock or refresh required and are ideal for industrial and automotive temperature support.
ISSI QUAD Synchronous SRAM
The ISSI high-performance QUAD Synchronous SRAM family is ideal for networking applications and is compatible with QDR II™ products. The ISSI QUAD Synchronous SRAM family includes the IS61QDB21M36, which is a burst of two, separate I/O devices organized as 1Mx36, and the IS61QDB22M18, which is the 2Mx18 version. ISSI QUAD Synchronous SRAM family devices run at 250 MHz and are packaged in a 165-ball fine ball grid array package with a 15 mm x 17mm body size and a 1mm pitch.
ISSI Pseudo SRAM
The ISSI Pseudo SRAM product line combines the best features of SRAM and DRAM to provide designers with an easy-to-use, low-power, cost-effective memory solution. These ISSI Pseudo SRAM devices have a pinout identical to and are drop-in replacements for regular 4MB to 64MB low power SRAMs. These ISSI Pseudo SRAMs are fabricated on 0.14 micron DRAM technology and are available in commercial 0° to 70º C and industrial -40° C to 85º C temperature ranges. Both 1.8V and 3.0V operating voltage versions are available.