ISSI
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Integrated Silicon Solution, Inc. (ISSI) designs, and develops high performance integrated circuits for digital consumer electronics, networking, mobile communications, and automotive electronics.
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ISSI Ultra-Low Power SRAM
ISSI ultra-low power SRAM devices offer significant power savings compared to the previous versions and feature the lowest operating current in the industry. ISSI ultra-low power SRAM devices feature high-speed access time (45ns and 55ns) and CMOS low power operation (12 mW typical operating current and 4 µW typical CMOS standby). These ultra-low power SRAMs also provide fully static operation with no clock or refresh required and are ideal for industrial and automotive temperature support.
ISSI QUAD Synchronous SRAM
The ISSI high-performance QUAD Synchronous SRAM family is ideal for networking applications and is compatible with QDR II™ products. The ISSI QUAD Synchronous SRAM family includes the IS61QDB21M36, which is a burst of two, separate I/O devices organized as 1Mx36, and the IS61QDB22M18, which is the 2Mx18 version. ISSI QUAD Synchronous SRAM family devices run at 250 MHz and are packaged in a 165-ball fine ball grid array package with a 15 mm x 17mm body size and a 1mm pitch.
ISSI Pseudo SRAM
The ISSI Pseudo SRAM product line combines the best features of SRAM and DRAM to provide designers with an easy-to-use, low-power, cost-effective memory solution. These ISSI Pseudo SRAM devices have a pinout identical to and are drop-in replacements for regular 4 MB and 8 MB low power SRAMs. The IS66WV25616BLL and IS66WV51216BLL are organized as 256Kx16 and 512Kx16, respectively, with access times as fast as 55ns and typical operating current of only 15mA. ISSI Pseudo SRAMs are fabricated on 0.14 micron DRAM technology and are available in commercial 0° to 70º C and industrial -40° C to 85º C temperature ranges. Both 1.8V and 3.0V operating voltage versions are available.
