International Rectifier AUIRS2334S Power MOSFET & IGBT Driver
International Rectifier AUIRS2334S is a 600V IC for 3-phase inverterized motor drive applications, with three independent high side and low side channels. An advanced input filter provides improved signal input/output pulse symmetry. Other features include integrated fixed deadtime protection, shoot-through protection, under-voltage lockout protection and matched propagation delays for both channels. AUIRS2334S is automotive-qualified and meets AEC-Q100 standards.
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International Rectifier TSOP-6 Package HEXFET® MOSFETs
International Rectifier's TSOP-6 Package HEXFET MOSFETs are an addition to an extensive portfolio of devices featuring IR's latest low-voltage HEXFET MOSFET silicon in a TSOP-6 package for low power applications including load switch, charge and discharge switches for battery protection and inverter switches. Featuring a very low on-state resistance (RDS(on)) to significantly cut conduction losses, these new power MOSFETs are available as 20V and 30V devices in N- and P-Channel configurations with a maximum gate drive from 12Vgs to 20Vgs. As a result of the low RDS(on) of this platform, these devices can be used to replace MOSFETs in larger packages to save board space and reduce system cost.
International Rectifier 25V DirectFET®plus Power MOSFETs
International Rectifier's 25V DirectFET®plus Power MOSFETs features IR's new generation of silicon that sets a new standard in efficiency for 12V input synchronous buck applications including next-generation servers, desktops, and notebooks. These 25V DirectFET®plus Power MOSFETs reduce on-state resistance (RDS(on)) and gate charge (Qg) compared to previous generation devices to significantly improve efficiency up to 2 percent. In addition, International Rectifier's 25V DirectFET®plus Power MOSFETs offer ultra low gate resistance (Rg) enabling further efficiency improvement by minimizing switching losses in DC-DC converters. The 25V DirectFET®plus Power MOSFETs combine industry leading RDS(on) and Rg, combined with low charge to minimize conduction and switching losses.
International Rectifier Ultra Compact PQFN HEXFET® Power MOSFETs
International Rectifier's Ultra Compact PQFN HEXFET® Power MOSFETs deliver an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smart phones, tablet PCs, camcorders, digital still cameras, notebook PC, server and network communications equipment. These Ultra Compact PQFN HEXFET® Power MOSFETs come in a 2x2mm package and are available in 20 V, 25 V and 30 V with standard or logic level gate drive. They utilize International Rectifier's latest low voltage N-Channel and P-Channel silicon technologies to offer very low on-resistance (RDS(on)), and high power density.
International Rectifier Dual PQFN HEXFET® Power MOSFETs
International Rectifier's Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), International Rectifier's Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.
International Rectifier Gen2 SupIRBuck™ POL Voltage Regulators
International Rectifier Gen2 SupIRBuck™ integrated Point-of-Load (POL) Voltage Regulators deliver benchmark efficiency and dramatically reduce system size. International Rectifier SupIRBuck POL Voltage Regulators deliver up to 12A output current in a low-profile, thermally enhanced 5x6mm Power-QFN package. These International Rectifier devices are fully featured for server, storage, netcom, and telecom applications and are designed to offer outstandi efficiency over the entire load range and a very high switching frequency for significant overall system size reduction. These POL voltage regulators are optimized for 12V input voltage and superior efficiencies are also achieved in applications with 9.6V, 5V, or 3.3V input voltages. The common scalable footprint of SupIRBuck™ devices offers a high level of flexibility for easy on board implementation.
International Rectifier High Voltage Gate Driver ICs
International Rectifier High Voltage Gate Driver ICs are a simple, compact solution for driving MOSFETs or IGBTs up to 1200V in applications up to 12kW. These International Rectifier 600V and 1200V High Voltage Gate Driver ICs can save up to 30% in part count in a 50% smaller PCB area compared to a discrete optocoupler or transformer-based solutions. These International Rectifier devices provide full driver capability with extremely fast switching speeds, designed-in ruggedness, and low-power dissipation. These High Voltage Gate Driver ICs generate the current and voltage necessary to turn MOSFETs or IGBTs on and off from the logic output of a DSP, microcontroller, or other logic device. These International Rectifier devices feature output currents up to 2A and are CMOS compatible. Most of the devices are also TTL compatible.
International Rectifier 300-1200V IGBTs
International Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The International Rectifier IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Rectifier IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.