Infineon IPG20N04 / IPG20N06 OptiMOS™ / OptiMOS-™T2 Power Transistors
Infineon Technologies IPG20N06 OptiMOS™ Power Transistors and IPG20N04 / IPG20N06 OptiMOS™-T2 Power Transistors are the newest additions to the OptiMOS product line. The Infineon IPG20N06 OptiMOS (55V), IPG20N06 OptiMOS-T2 (60V), and IPG20N04 OptiMOS-T2 (40V) devices are dual N-channel devices in a TDSON-8 package. These Infineon OptiMOS devices have a maximum operating temperature of 175ºC.
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications.
View all OptiMOS devices.
Infineon N-Channel OptiMOS™ Power MOSFETs & Power Transistors
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Infineon High Speed Trench & Fieldstop IGBTs
Infineon High Speed Trench & Fieldstop IGBTs use TrenchStop™ and Fieldstop technology to provide superb switching performance, very low VCEsat, and low EMI. Infineon High Speed Trench & Fieldstop IGBTs are ideal for uninterruptible power supplies applications. The IGW25N120H3 IGBT is recommended in combination with SiC Diode IDH15S120 and is also used for solar inverter applications. The IKW15N120H3, IKW30N60H3, and IKW20N60H3 IGBTs are each part of a high speed DuoPack and come with a very soft, fast recovery anti-parallel diode.
Infineon CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Infineon CIPOS™ Intelligent Power Modules
Infineon CIPOS™ MINI and CIPOS SIL (Single In-Line) Intelligent Power Modules are energy-efficient devices that integrate various power and control components to increase reliability and optimize size and system costs. CIPOS Intelligent Power Modules simplify power design and reduce time to market significantly. These Infineon devices are designed to control AC motors in variable speed drives for applications from 4A to 22A, such as air conditioners, washing machines, vacuum cleaners, and compressors up to 3kW. The CIPOS MINI is a fully isolated dual in-line molded module while the CIPOS SIL is a DCB isolated single in-line molded module. Infineon CIPOS devices provide a concerted power system from one source.
Infineon ILD4035 LED Driver IC
The Infineon ILD4035 is a hysteretic buck LED driver for industrial applications realized in a bipolar IC technology. This LED controller is able to drive high current, high brightness LEDs up to 350 mA. The Infineon ILD4035 LED driver incorporates a wide input voltage range, an internal power switch, and the output current level can be adjusted with an external sense resistor. This Infineon LED driver can be switched on and off by an external signal that is also suited for regulating brightness of the LEDs by PWM or analog dimming. Depending on the value of the switching inductor the switching frequency and the voltage ripple could be set. The precise internal bandgap of the ILD4035 stabilizes the circuit and provides stable current conditions over temperature range. Over voltage protection and temperature shut down mechanisms allow this LED driver to protect attached LEDs from overload as well as from short circuit events. The LEDs can be also protected against thermal overload by thermally coupling the LEDs to the ILD4035.
Infineon BGA628L7 Low Noise Amplifier
The Infineon BGA628L7 wide band low noise amplifier features extremely small form factor with a height of 0.32mm maximum and a size of 1.4 x 1.26 mm². The compact size together with the low external part count makes the Infineon BGA628L7 LNA ideal for size-critical modules for WLAN, mobile TV, or cell phones. This Infineon low noise amplifier includes an On/Off switch. The BGA628L7 LNA's Out pin is simutaneously used for RF Out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0V or an open switches the device on and a DC level of VCC switches off.
Infineon BFP650 SiGe RF Transistor
The Infineon BFP650 NPN SiGe RF transistor is designed for high power amplifiers and ideal for low phase noise oscillators. The Infineon BFP650 SiGe RF transistor features maximum available gain of 21dB at 1.8GHz and a noise figure of F=0.8dB at 1.8GHz. This Infineon device features gold metallization for high reliability.
Infineon BCR420U LED Driver
The Infineon BCR420U LED driver provides a low-cost solution for
driving 0.25W LEDs with an LED forward current up to 150 mA.
Internal breakdown voltage is 40V, which is the maximum
voltage that the Infineon BCR420U LED driver IC can sustain. With
no need for additional
external components like inductors, capacitors, and free wheeling
diodes,
the Infineon BCR420U LED drivers are a cost-efficient and
PCB-area saving solution.
Infineon ESD3V3U1U Unidirectional TVS Diode
The Infineon ESD5V3U1U unidirectional TVS diode features a typical capacitance of 0.45 pF and a typical breakdown voltage of 8.3 V and was designed for digital high-speed applications operating at voltages of up to 5.3 V at leakage currents of less than 10 nA. The Infineon ESD3V3U unidirectional TVS diode was especially designed for mobile phone applications with a maximum operating voltage of 3.3 V only. In order to ensure long battery life, leakage current in this Infineon TVS diode is further reduced to less than 1 nA.
Infineon OptiMOS™ / CoolMOS™ N-Channel MOSFETs
Infineon OptiMOS™ and CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors.