GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology and also develops high power Silicon technologies. GeneSiC Semiconductor plays a key enabling role in conserving energy in a wide array of high power systems. GeneSiC's technology enables efficient harvesting of renewable energy sources. GeneSiC electronic components run cooler, faster, and more economically.
GeneSiC Semiconductor's Silicon Carbide Super Junction Transistors are a new innovative power device, which are "Super-High" current gain SiC BJTs with up to 1700 V ratings. The SJTs are gate-oxide free, normally-off, quasi-majority carrier devices with a square reverse biased safe operation area (RBSOA) and a slightly positive temperature co-efficient of on-resistance. The SJT is a current controlled device which requires a small gate current that can be driven by commercial, commonly available gate drivers. Incorporating high voltage, high frequency and high-temperature capable SiC SJTs will increase conversion efficiency and reduce the size/weight/volume of power electronics.
GeneSiC's MBR20100/MBR40045 Silicon Power Schottky Diodes are devices that are half the size/weight of standard power schottky diodes from other manufacturers. They offer high durability and high surge capability. The MBR20100CTS has a repetitive peak reverse voltage of 100V and a continuous forward current rating of 200A. The repetitive peak reverse voltage for the MBR40045CTS is 45V and it has a continuous forward current rating of 400A.
GeneSiC Semiconductor MURT40040R silicon super fast recovery diodes provide high surge capability and repetitive peak reverse voltage of up to 400V. GeneSiC MURT40040R silicon super fast recovery diodes come in a three tower package and feature continuous forward current of 400A. These GeneSiC Semiconductor silicon super fast recovery diodes provide an operating temperature of -40 to 175ºC.