Freescale MRFE6VP6 RF LDMOS Power Transistors
Freescale Semiconductor MRFE6VP61K25H and MRFE6VP6300H 50V RF LDMOS power transistors are designed for high VSWR applications. The MRFE6VP61K25H provides an output power level of 1250W, making it ideal for rugged applications. The enhanced ruggedness of Freescale Semiconductor MRFE6VP61K25H RF LDMOS power transistors allows designers to remove external circuitry that was previously required, enabling lower overall system cost while improving performance. The MRFE6VP61K25H is designed to support harsh environments in highly mismatched applications, such as plasma generators, CO2 lasers, and MRI power amplifiers. It is housed in an NI-1230 package. Freescale MRFE6VP6300H 50V RF LDMOS power transistors are designed for applications operating at frequencies between 1.8 and 600 MHz and optimized for use under the impedance mismatch conditions encountered in CO2 lasers, plasma generators, and MRI scanners. The MRFE6VP6300H is the first 50V LDMOS transistor to deliver full-rated output power of 300 W CW into a load with a VSWR of 65:1. The MRFE6VP6300H is housed in a compact air cavity ceramic NI780-4 package.
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