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• FDME1023 Datasheet
• FDME1024 Datasheet
• FDME1034 Datasheet
• FDFME2P Datasheet

The Fairchild Semiconductor FDME10xx and FDFME2P PowerTrench® MOSFETs are designed specifically as a single package solution for the battery charge switch in cellular handsets and other ultra-portable applications. The Fairchild Semiconductor FDME1023PZT features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The FDME1024NZT is a dual N-Channel device with low on-state resistance for minimum conduction losses. The FDME1034CZT is a complementary PowerTrench device with an independent N-Channel and P-Channel MOSFET with low on-state resistance. The FDME1034CZT is minimized to allow high frequency switching directly from the controlling device. The Fairchild Semiconductor FDFME2P PowerTrench device features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.

• Max r_DS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
  
• Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
  
• Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
  
• Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
  
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  
• Free from halogenated compounds and antimony oxides
  
• HBM ESD protection level > 1600V
  
• RoHS Compliant

• Load Switch
  
• Battery Charging
  
• Battery Disconnect Switch

• Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
  
• Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
  
• Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
  
• Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A
  
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  
• Free from halogenated compounds and antimony oxides
  
• HBM ESD protection
  
• RoHS Compliant

• Baseband Switch
  
• Load Switch

• Q1: N-Channel:
  Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
  Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
  Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
  Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A
  
• Q2: P-Channel:
  Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
  Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
  Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
  Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
  
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  
• Free from halogenated compounds and antimony oxides
  
• HBM ESD protection level > 1600V
  
• RoHS Compliant
  

• DC-DC Conversion
  
• Level Shifted Load Switch

• Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
  
• Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
  
• Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
  
• Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
  
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  
• Schottky: VF < 0.57 V @ 1A
  
• Free from halogenated compounds and antimony oxides
  
• HBM ESD protection level > 1600V (Note3)
  
• RoHS Compliant

• Battery Charging
  
• DC-DC Conversion