Fairchild Power Stage Dual Asymmetric MOSFETsFairchild Semiconductor FDMS36xxS Power Stage Dual Asymmetric MOSFET modules provide the highest output current capability among all 5mm x 6mm dual MOSFET solutions on the market. Fairchild FDMS36xxS dual asymmetric MOSFETs incorporate a control and synchronous MOSFET as well as a monolithic Schottky body diode in a PQFN package. The switch node has been internally connected to allow enable easy placement and routing of synchronous buck converters. The control MOSFET and synchronous MOSFET have been designed to provide optimal power efficiency for output currents up to 30A. These Fairchild Semiconductor devices achieve industry-leading sub-2mΩ low side rDS(on) at high performance computing rated breakdown voltages. FDMS36xxS MOSFETs are optimized to minimize the combination of conduction and switching losses from 300kHz to 600kHz, delivering reliable, highest power efficiency for point-of-load and multi-phase synchronous buck DC-DC applications.
Features
- Integrated control FET (high side) and synchronous FET (low side)
- MOSFETs as well as a Schottky body diode in a single 5mm x 6mm PQFN package
- Reduces foot print area 50% or more replacing two or three 5mm x 6mm components
- Provides the highest power density for point of load and multi-phase synchronous buck DC-DC applications
- Clip technology reduces synchronous FET (low side) RDS(ON) to below 2mΩ. Lowest package resistance
- Fairchild's Shielded Gate technology reduces switch node ringing which eliminates the need for external snubbers or gate resistors in most applications
- Ultra-low source inductance on synchronous FET
- Conventional pinout and footprint
| Applications
- DC-DC synchronous-Buck conversion
- Desktops, notebooks and servers
- Telecommunications, routing and switching
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